Transient devices designed to undergo programmable transformations

ABSTRACT

The invention provides transient devices, including active and passive devices that electrically and/or physically transform upon application of at least one internal and/or external stimulus. Materials, modeling tools, manufacturing approaches, device designs and system level examples of transient electronics are provided.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.13/624,096, filed Sep. 21, 2012, which claims the benefit of priorityfrom U.S. Provisional Patent Application Nos. 61/565,907, filed Dec. 1,2011, and 61/636,510, filed Apr. 20, 2012, each of which is herebyincorporated by reference in its entirety.

STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT

This invention was made, at least in part, with United Statesgovernmental support awarded by DARPA award no. W911NF-11-1-0254. TheUnited States Government has certain rights in this invention.

BACKGROUND

This invention is in the field of transient devices, and relatesgenerally to passive and active devices designed to programmablytransform.

Transient devices have potential for a range of important applications.For example, eco-degradable environmental sensors avoid the need fordevice collection and bioresorbable medical devices that degrade and arecleared from the body avoid toxicity and inflammation. Strategically,military devices that degrade after a preselected time or uponapplication of a triggered stimulus avoid transferring knowledge ormaterials to enemies. All of these envisioned applications areimportant, but implementation of transient devices is dependent upondesign strategies. Design strategies for transient devices must (i)support device fabrication using degradable device component materialsand degradable substrates, (ii) provide for accurate control of theuseful lifetime of the device, and (iii) utilize materials that arecompatible with and perform adequately for a given application within atarget environment.

Recently, a number of patents and publications have disclosed deviceswith transient properties. For example, Kim et al., “Silicon electronicson silk as a path to bioresorbable implantable devices”, Appl. Phys.Lett. 95, 133701 (2009); U.S. Patent Application Publication2011/0230747; and International Patent Application Publication WO2008/085904 disclose biodegradable electronic devices that may include abiodegradable semiconducting material and a biodegradable substrate.Bettinger et al., “Organic thin film transistors fabricated onresorbable biomaterial substrates”, Adv. Mater., 22(5), 651-655 (2010);Bettinger et al., “Biomaterial-based organic electronic devices”, Poly.Int. 59(5), 563-576 (2010); and Irimai-Vladu, “Environmentallysustainable organic field effect transistors”, Organic Electronics, 11,1974-1990 (2010) disclose biodegradable electronic devices that mayinclude a biodegradable organic conducting material and a biodegradablesubstrate. International Patent Application Publication WO 2008/108838discloses biodegradable devices for delivering fluids and/or biologicalmaterial to tissue. U.S. Patent Application Publication 2008/0306359discloses ingestible devices for diagnostic and therapeuticapplications. Kozicki et al., “Programmable metallization cell memorybased on Ag—Ge—S and Cu—Ge—S solid electrolytes”, NonVolatile MemoryTechnology Symposium, 83-89 (2005) discloses memory devices where metalions within an electrolyte may be reduced or oxidized to form or removesolid metal interconnects.

SUMMARY

The invention provides transient devices, including active and passivedevices that physically, chemically and/or electrically transform uponapplication of at least one internal and/or external stimulus.Incorporation of degradable device components, degradable substratesand/or degradable encapsulating materials each having a programmable,controllable and/or selectable degradation rate provides a means oftransforming the device. In some embodiments, for example, transientdevices of the invention combine degradable high performance singlecrystalline inorganic materials with degradable substrates.Incorporation of degradable single crystalline inorganic materialsprovides state-of-the-art electronic and mechanical properties (e.g.,bending stiffness, Young's modulus, radius of curvature, etc.) anddevice attributes (e.g., flexibility, stretchability, etc.).

A remarkable feature of modern silicon is its ability to remainfunctionally and physically invariant, almost indefinitely for manypractical purposes. Here, a silicon-based technology that offers theopposite behavior is introduced: it gradually vanishes over time, in awell-controlled, programmed manner. Devices that are ‘transient’ in thissense create application possibilities that cannot be addressed withconventional electronics. The present devices may be used inapplications such as active implants that exist for medically usefultimeframes, but then completely dissolve and disappear via resorption bythe body. A set of materials, manufacturing schemes, device componentsand theoretical design tools for complementary metal oxide semiconductor(CMOS) electronics of this type is reported, together with differentclasses of sensors and actuators in addressable arrays, options forpower supply and a wireless control strategy. A transient silicon devicecapable of delivering thermal therapy in an implantable mode as aprogrammable, non-antibiotic bacteriocide, and its demonstration invitro and in vivo illustrate a system-level example of this technology.

An overarching goal in the development of nearly any new class ofelectronics is to achieve high performance operation in physical formsthat undergo negligible change with time. Active and passive materials,device and circuit layouts and packaging strategies are each carefullyformulated individually and then configured collectively to accomplishthis outcome. The transient electronics technology introduced hereinvolves similar attention to engineering design, but in the context ofsystems that physically disappear or transform, in whole or in part, atprescribed times and with well-defined rates. Use scenarios range fromintegration with living hosts (human/animal/insect/plant; on-dwelling orin-dwelling) to indoor/outdoor environments such as buildings, roadwaysor materiel. Enabled devices include medical monitors that fully resorbwhen implanted into the human body (“bio-resorbable”) to avoid adverselong-term effects, or environmental monitors that dissolve when exposedto water (“eco-resorbable”) to eliminate the need for collection andrecovery. Other concepts involve circuits that incorporate strategicregions with timed transience, to affect controlled transformation infunction.

This description presents a set of materials, modeling tools,manufacturing approaches, device designs and system level examples oftransient electronics. Because this technology is based on silicon, itcan exploit many modern, established aspects of device and circuitdesign, with operational characteristics that can match those ofnon-transient counterparts formed in the usual way on wafer substrates.This result, taken together with supporting technologies in sensors,actuators, power supply and wireless control, provides access toqualitatively more sophisticated capabilities than those available withrecently reported forms of organic electronics in which certainconstituent materials are water soluble¹⁻³ or simple non-transienttransistors formed on bioresorbable substrates^(4.)

Provided herein are transient devices and methods of making and usingtransient devices. For example, devices of the invention are useful forex vivo, in vitro or in vivo sensing of a parameter associated with anenvironment, such as a chemical composition (e.g., pH, ionic strength,presence or concentration of a biomarker, protein, carbohydrate, etc.),an electrochemical parameter (e.g., current or voltage), temperature,and/or an optical parameter (e.g., absorption, scattering, etc.).

In an aspect, a passive transient electronic device comprises asubstrate, one more inorganic semiconductor components, one or moremetallic conductor components or one or more inorganic semiconductorcomponents and one or more metallic conductor components supported bythe substrate, wherein the one or more inorganic semiconductorcomponents or one or more metallic conductor components independentlycomprise a selectively transformable material, wherein the one or moreinorganic semiconductor components or the one or more metallic conductorcomponents have a preselected transience profile in response to anexternal or internal stimulus, wherein at least partial transformationof the one or more inorganic semiconductor components or the one or moremetallic conductor components provides a programmable transformation ofthe passive transient electronic device in response to the external orinternal stimulus and at a pre-selected time or at a pre-selected rate,wherein the programmable transformation provides a change of thefunction of the passive transient electronic device from a firstcondition to a second condition.

In an aspect, an actively triggered transient electronic devicecomprises a substrate; one or more inorganic semiconductor components,one or more metallic conductor components or one or more inorganicsemiconductor components and one or more metallic conductor componentssupported by the substrate; wherein the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents independently comprise a selectively transformable material,wherein the one or more inorganic semiconductor components or the one ormore metallic conductor components have a preselected transience profilein response to an external or internal stimulus; and an actuatorresponsive to a user initiated external trigger signal and operablyconnected to the one or more inorganic semiconductor components or theone or more metallic conductor components, wherein upon the devicereceiving the external trigger signal the actuator directly orindirectly initiates at least partial transformation of the one or moreinorganic semiconductor components or the one or more metallic conductorcomponents in response to the internal or external stimulus, therebyproviding a programmable transformation of the actively triggeredtransient electronic device in response to the external trigger signal,wherein the programmable transformation provides a change of thefunction of the actively triggered transient electronic device from afirst condition to a second condition. In some embodiments, the actuatoris operably connected to the one or more inorganic semiconductorcomponents or the one or more metallic conductor components, optionallyboth, such that it acts directly on the one or more inorganicsemiconductor components and/or the one or more metallic conductorcomponents to initiate the at least partial transformation, for examplein a manner directly causing selective removal of the one or moreinorganic semiconductor components and/or the one or more metallicconductor components. In some embodiments, the actuator is operablyconnected to the one or more inorganic semiconductor components or theone or more metallic conductor components, optionally both, such that itacts on one or more intermediate structures positioned between theactuator and the one or more inorganic semiconductor components and/orthe one or more metallic conductor components so as to initiate the atleast partial transformation, for example, by selective removal of theone or more intermediate structures resulting in exposure of theinorganic semiconductor components and/or the one or more metallicconductor components to the internal or external stimulus.

In an embodiment, one or more inorganic semiconductor components or oneor more metallic conductor components undergo a complete transformationor a substantially complete transformation, thereby providing theprogrammable transformation of the passive or active transientelectronic device. The complete transformation may be characterized by acomplete removal, a complete phase change or a complete chemical changeof the one or more inorganic semiconductor components or the one or moremetallic conductor components. A “complete transformation” occurs when100% of a material undergoes a transformation. A “substantially completetransformation” occurs when 95% or greater than 95% (e.g., 97%, 98%,99%, 99.5% or 99.9%) of a material undergoes a transformation, such asremoval, chemical conversion, phase transition or the like. In anembodiment, for example, a material that undergoes a substantiallycomplete transformation also undergoes a change in a physical property,such as conductivity or resistance that is greater than or equal to 95%,for example, by undergoing a decrease in conductivity or an increase inresistance greater than or equal to 95%.

In an embodiment, one or more inorganic semiconductor components or oneor more metallic conductor components undergo an incompletetransformation. The incomplete transformation may be characterized by apartial removal, phase change or chemical change of at least 20%, 30%,50% or 70% of the quantity of the inorganic semiconductor components orat least 20%, 30%, 50% or 70% of the quantity of the metallic conductorcomponents, thereby providing the programmable transformation of thepassive or active transient electronic device. The incompletetransformation may be characterized by a partial removal, phase changeor chemical change of at least 20%, 30%, 50% or 70% by weight, volume orarea of each of the one or more inorganic semiconductor components or atleast 20%, 30%, 50% or 70% by weight, volume or area of each of the oneor more metallic conductor components, thereby providing theprogrammable transformation of the passive transient electronic device.In an embodiment, for example, a material that undergoes a incompletetransformation also undergoes a change in a physical property, such asconductivity or resistance that is greater than or equal to 20% (or 30%for some applications or 50% for some applications or 70% for someapplications), for example, by undergoing a decrease in conductivity oran increase in resistance greater than or equal to 20% (or 30% for someapplications or 50% for some applications or 70% for some applications).

In an embodiment, transformation of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents occurs by a process other than bioresorption. For example,the transformation of the one or more inorganic semiconductor componentsor the one or more metallic conductor components may occur by a phasechange, wherein at least a portion of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents undergoes at least partial sublimation or melting, therebyproviding the programmable transformation of the passive transientelectronic device.

In another embodiment, transformation of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents occurs via at least partial dissolution of the one or moreinorganic semiconductor components or the one or more metallic conductorcomponents in a solvent. The solvent may be an aqueous solvent or anonaqueous solvent. An “aqueous solvent” is a liquid at 298 K thatpredominantly comprises water, i.e., greater than 50% v/v water, whereasa “nonaqueous solvent” is a liquid at 298 K that predominantly comprisesliquid(s) other than water, i.e., less than 50% v/v water. Exemplaryaqueous solvents include water, water-based solutions, bodily fluids,and the like. Exemplary nonaqueous solvents include organic solvents(e.g., alcohols, esters, ethers, alkanes, ketones) and ionic liquids.

In another embodiment, transformation of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents occurs via at least partial hydrolysis of the one or moreinorganic semiconductor components or the one or more metallic conductorcomponents.

In another embodiment, transformation of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents occurs via at least partial etching or corrosion of the oneor more inorganic semiconductor components or the one or more metallicconductor components.

In another embodiment, transformation of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents occurs by a photochemical reaction wherein at least a portionof the one or more inorganic semiconductor components or the one or moremetallic conductor components absorb electromagnetic radiation andundergo an at least partial chemical or physical change. In anembodiment, the photochemical reaction is a photodecomposition process.

In another embodiment, transformation of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents occurs by an electrochemical reaction. For example, theelectrochemical reaction may be at least partial anodic dissolution ofthe one or more inorganic semiconductor components or the one or moremetallic conductor components.

In another embodiment, transformation of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents occurs by a chemical or physical change wherein at least aportion of the one or more inorganic semiconductor components or the oneor more metallic conductor components undergoes a decrease inconductivity greater than or equal to 50%, optionally for someembodiments greater than or equal to 75%, and optionally for someembodiments greater than or equal to 95%. In another embodiment,transformation of the one or more inorganic semiconductor components orthe one or more metallic conductor components occurs by a chemical orphysical change wherein at least a portion of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents is at least partially, and optionally, entirely convertedinto an insulator, thereby providing the programmable transformation ofthe passive transient electronic device.

In an aspect, the one or more inorganic semiconductor components or theone or more metallic conductor components are selectively removable andundergo a process characterized by removal, loss or other materialtransfer process (e.g., flaking, delamination, relocation,repositioning, etc.). In some embodiments, for example, the one or moreinorganic semiconductor components or the one or more metallic conductorcomponents undergo a process characterized by removal that issubstantially uniform with respect to one or more regions of theinorganic semiconductor components or metallic conductor components, forexample regions exposed to an internal or external stimulus, such as aprocess wherein the thickness of the inorganic semiconductor componentsor metallic conductor components decreases substantially uniformly(e.g., within 10%) as a function of time. In some embodiments, forexample, the one or more inorganic semiconductor components or the oneor more metallic conductor components undergo a process characterized byremoval that is substantially nonuniform with respect to one or moreregions of the inorganic semiconductor components or metallic conductorcomponents, such as regions exposed to an internal or external stimulus,such as a process wherein the inorganic semiconductor components ormetallic conductor components are preferentially (e.g., more rapidly)removed at nano-sized or micro-sized features, such as grain boundaries,defect sites, step edges, phase boundaries, etc. as a function of timeIn an embodiment, for example, the one or more inorganic semiconductorcomponents or the one or more metallic conductor components undergo aprocess characterized by removal that is substantially nonuniform so asto generate a porous material, thereby impacting the electronicproperties (e.g., conductivity, resistance, etc.) of the inorganicsemiconductor components or metallic conductor components. In anembodiment, for example, the one or more inorganic semiconductorcomponents or the one or more metallic conductor components undergo aprocess characterized by removal that is substantially nonuniform so asto cause flaking, for example, wherein the formation of cracks, defectsand/or pores in the material result in loss of portions (e.g., flakes)of the material, thereby impacting the electronic properties (e.g.,conductivity, resistance, etc.) of the inorganic semiconductorcomponents or metallic conductor components. In an embodiment, the oneor more inorganic semiconductor components or the one or more metallicconductor components undergo a process characterized by at leastpartial, and optionally complete, delamination and/or detachment from anunderlying substrate or device component, thereby impacting theelectronic properties (e.g., conductivity, resistance, etc.) of theinorganic semiconductor components or metallic conductor components.

In an embodiment, a transient electronic device has a preselectedtransience profile characterized by the transformation of the one ormore inorganic semiconductor components or the one or more metallicconductor components occurring over a time interval selected from therange of 1 ms to 2 years, or 1 ms to 1 year, or 1 ms to 6 months, or 1ms to 1 month, or 1 ms to 1 day, or 1 ms to 1 hour, or 1 second to 10minutes, thereby providing the programmable transformation of thepassive transient electronic device. In an embodiment, the preselectedtransience profile is characterized by a transformation of 0.01% to100%, or 0.1% to 70%, or 0.5% to 50%, or 1% to 20% or 1% to 10% of theone or more inorganic semiconductor components or the one or moremetallic conductor components over a time interval selected from therange of 1 ms to 2 years, or 1 ms to 1 year, or 1 ms to 6 months, or 1ms to 1 month, or 1 ms to 1 day, or 1 ms to 1 hour, or 1 second to 10minutes, thereby providing the programmable transformation of thepassive transient electronic device. In an embodiment, the preselectedtransience profile is characterized by a decrease in the averagethickness of the one or more inorganic semiconductor components or theone or more metallic conductor components at a rate selected over therange of 0.01 nm/day to 10 microns s⁻¹, or 0.1 nm/day to 1 micron s⁻¹,or 1 nm/day to 0.5 micron s⁻¹. In an embodiment, the preselectedtransience profile is characterized by a decrease in the mass of the oneor more inorganic semiconductor components or the one or more metallicconductor components at a rate selected over the range of 0.01 nm/day to10 microns s⁻¹, or 0.1 nm/day to 1 micron s⁻¹, or 1 nm/day to 0.5 microns⁻¹. In an embodiment, the preselected transience profile ischaracterized by a decrease in the electrical conductivity of the one ormore inorganic semiconductor components or the one or more metallicconductor components at a rate selected over the range of 10¹⁰ S·m⁻¹ s⁻¹to 1 S·m⁻¹ s⁻¹, or 10⁸ S·m⁻¹ s⁻¹ to 10 S·m⁻¹ s⁻¹, or 10⁵ S·m⁻¹ s⁻¹ to100 S·m⁻¹ s⁻¹.

In an embodiment, the device monitors the at least partialtransformation of the one or more inorganic semiconductor components orthe one or more metallic conductor components. For example, the devicemay monitor the rate of the at least partial transformation of the oneor more inorganic semiconductor components or the one or more metallicconductor components providing the programmable transformation of thepassive transient electronic device. Self-monitoring in devices of theinvention may provide enhanced functionality, such as providing thebasis for signaling to control overall device functionality or toprovide signaling to a user providing measurements of the extent of thetransformation, timeframe for programmable transformation or acharacterization of device performance or functionality as a function oftime.

A user initiated external trigger signal may directly or indirectlytrigger the programmable transformation of the electronic device. Forexample, the user initiated external trigger signal may be an electronicsignal, an optical signal, a thermal signal, a magnetic signal, acousticsignal, a mechanical signal, a chemical signal, or an electrochemicalsignal. In some embodiments, the user initiated external trigger signalis a user initiated application of an electric field provided to thedevice, a user initiated application of electromagnetic radiationprovided to the device, a user initiated mechanical impact provided tothe device, a user initiated flow of heat provided to the device, a userinitiated flow of heat from the device or a user initiated applicationof an RF electric field provided to the device. The invention includesdevices configured to receive a user initiated trigger signal, forexample, devices having a receiver and/or microprocessor component incommunication with a transmitter providing a user initiated triggersignal to the device.

The user initiated external trigger signal may be provided to the devicedirectly by a user or indirectly via software stored on acomputer-readable medium and executed by a microprocessor. The softwaremay, for example, respond to user input data, data acquired from acomponent of the device, and/or a feedback loop in continuouscommunication with the device. The transient device may, for example, bein one-way or two-way communication with a transmitter, wherein thetransmitter provides the user initiated external trigger signal to areceiver of the device operationally connected to the actuator. FIG. 131shows a schematic of a transient device 1400 in communication with atransmitter 1412 providing a user initiated external trigger signal 1414to a receiver 1408 of the device operationally connected to an actuator1410. The transient device 1400 also includes a substrate 1402, one ormore inorganic semiconductor components 1404 and one or more metallicconductor components 1406.

In some embodiments, a transient device includes a receiver forreceiving the user initiated external trigger signal, the receiveroperationally connected to the actuator so as to initiate the at leastpartial transformation of the one or more inorganic semiconductorcomponents or the one or more metallic conductor components uponreceiving the user initiated external trigger signal. For example, thereceiver may include an antenna, an electrode, a piezoelectric element,a photoactive material, or a thermally active material for receiving theuser initiated external trigger signal.

In some embodiments, the actuator comprises a processor for receiving asignal from the receiver for initiating the at least partialtransformation of the one or more inorganic semiconductor components orthe one or more metallic conductor components.

In some embodiments, the actuator acts directly on the one or moreinorganic semiconductor components, the one or more metallic conductorcomponents, or the substrate so as to cause the at least partialtransformation. Alternatively, in some embodiments, the actuator actsindirectly on the one or more inorganic semiconductor components or theone or more metallic conductor components so as to cause the at leastpartial transformation.

In an embodiment, an actuator comprises a microprocessor. For example, amicroprocessor may receive a user initiated external trigger signal, andsoftware stored on a computer-readable medium within the microprocessormay analyze the user initiated external trigger signal to determine thata source of energy should be provided to a component of the device, suchas electromagnetic radiation, acoustic energy, thermal energy, etc. Insome embodiment, the software then provides instructions to themicroprocessor to perform functions necessary to provide the energy to adevice component so as to initiate an at least partial transformation ofthe one or more inorganic semiconductor components and/or the one ormore metallic conductor components.

In some embodiments, the actuator at least partially removes one or moreintermediate structures provided on the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents so as to expose at least a portion of the one or moreinorganic semiconductor components or at least a portion of the one ormore metallic conductor components to the external or internal stimulus,thereby resulting in the at least partial transformation. The one ormore intermediate structures may, for example, comprise an encapsulatingmaterial provided on the one or more inorganic semiconductor componentsor on the one or more metallic conductor components, wherein theactuator causes removal of at least a portion of the encapsulatingmaterial so as to expose the one or more inorganic semiconductorcomponents or the one or more metallic conductor components to theexternal or internal stimulus. An encapsulating material may, forexample, be an encapsulating layer restricted to the surface(s) of theone or more inorganic semiconductor components or the surface(s) of theone or more metallic conductor components, an encapsulating overlayer onthe top surface of the device, or an encapsulating package surroundingthe entire device.

In some embodiments, a transient device includes an overlayer at leastpartially encapsulating the one or more inorganic semiconductorcomponents or the one or more metallic conductor components, where theoverlayer may comprise one or more reservoirs containing a chemicalagent or a biological agent. In an embodiment, an actuator comprises theoverlayer having the one or more reservoirs. In an embodiment, theoverlayer is a polymer layer or SiN layer. In an embodiment, the one ormore reservoirs are embedded in the overlayer. For example, the one ormore reservoirs of the overlayer may be ruptured in response to theexternal or internal stimulus, thereby resulting in release of thechemical or biological agent. In some embodiments, the one or morereservoirs of the overlayer independently have physical dimensionsselected over the range of 100 nm to 10,000 □m, or 500 nm to 5,000 □m,or 1 □m to 1,000 □m. Reservoirs having these dimensions may, forexample, be fabricated via photolithography or soft lithography (e.g.,microtransfer printing).

In some embodiments, one or more reservoirs of the overlayer areruptured in response to a mechanical impact, change in pressure,exposure to electromagnetic radiation, exposure to heat, or exposure toacoustic energy, thereby resulting in the release of the chemical orbiological agent. For example, release may result in dispersal of thechemical agent or biological agent leading to physical contact with oneor more device components, such as inorganic semiconductor components,metallic conductor components, dielectric components, encapsulatinglayers, substrate, etc., thereby causing selective transformation and/orselective removal of the device components in contact with the chemicalagent or biological agent. Exemplary chemical or biological agentsinclude water, a nonaqueous solvent, an aqueous solution, abiopolymer-containing solution, an acid, a base, an enzymatic solution,a PBS solution or a catalyst-containing solution.

In some embodiments, the overlayer comprises a silk material, and thechemical agent or biological agent comprises a protease containingmaterial, such as a protease containing solution. In some embodiments,protease enzymes may be complexed with small molecule inhibitors, suchas EDTA, or antibodies to shut off activity until the agent isdispersed.

In some embodiments, the actuator generates electromagnetic radiation,acoustic energy, an electric field, a magnetic field, heat, a RF signal,a voltage, a chemical change, or a biological change in response to theuser initiated external trigger signal, thereby initiating the at leastpartial transformation. The actuator may, for example, comprise aheater, a reservoir containing a chemical agent capable of causing achemical change or a biological change, a source of electromagneticradiation, a source of an electric field, a source of RF energy or asource of acoustic energy. Exemplary heaters include passive heaters,resistive heaters, and active heaters.

In some embodiments, an actuator comprises an encapsulating material atleast partially encapsulating one or more of the inorganic semiconductorcomponents or the metallic conductor components, wherein theencapsulating material comprises a selectively removable material thatis at least partially removed upon the device receiving the externaltrigger signal to expose underlying inorganic semiconductor componentsor metallic conductor components to the internal or external stimulus,thereby initiating the at least partial transformation. For example, theencapsulating material may be at least partially dissolved, hydrolyzed,or depolymerized by a chemical agent provided by the actuator inresponse to the user initiated external trigger signal to expose theunderlying inorganic semiconductor components or metallic conductorcomponents. In some embodiments, for example, a selectively removableencapsulating material is provided as an overlayer positioned on one ormore inorganic semiconductor components and/or one or more metallicconductor components comprising a selectively transformable material,such that at least partial removal of the overlayer of encapsulatingmaterial exposes the underlying one or more inorganic semiconductorcomponents and/or one or more metallic conductor components to aninternal or external stimulus, such as an environmental stimulus (e.g.,solvent, chemical environment, biological environment, ambient pressure,ambient temperature, ambient electromagnetic radiation, etc.), causingan at least partial transformation of the one or more inorganicsemiconductor components and/or one or more metallic conductorcomponents. In some embodiments, removal of the overlayer ofencapsulating material occurs as a result of exposure to anenvironmental stimulus (e.g., solvent, chemical environment, biologicalenvironment, ambient pressure, ambient temperature, ambientelectromagnetic radiation, etc.). In some embodiments, removal of theoverlayer of encapsulating material occurs as a result of an actuator ofa device acting on the overlayer of encapsulating material, for example,by releasing a chemical or biological agent capable of causing at leastpartial removal of the encapsulating material. In some embodiments,removal of the overlayer of encapsulating material occurs as a result ofan actuator of a device acting on the overlayer of encapsulatingmaterial, for example, by providing energy (e.g., electromagneticradiation, acoustic energy, thermal energy, mechanical energy, etc.)causing at least partial removal of the encapsulating material.

In another example, the encapsulating material may be a photosensitivematerial that undergoes a photochemical reaction in response toelectromagnetic radiation generated by the actuator to expose theunderlying inorganic semiconductor components or metallic conductorcomponents. The actuator may, for example, be a source of theelectromagnetic radiation, wherein the actuator is provided in opticalcommunication with the encapsulating material.

In yet another example, the encapsulating material is a thermallysensitive material that undergoes a phase change or chemical change inresponse to heat generated by the actuator to expose the underlyinginorganic semiconductor components or metallic conductor components. Forexample, the actuator may be a heater provided in thermal contact withthe encapsulating material for providing the heat, such as a resistiveheater or a passive heater responsive to absorption of electromagneticradiation. The invention includes devices comprising a heater embeddedin an overlayer comprising an encapsulating material, wherein the heateris configured to provide thermal energy, for example, in response to auser initiated trigger signal, that causes at least partial removal ofthe encapsulating material thereby exposing underlying inorganicsemiconductor components and/or metallic conductor components comprisinga selectively transformable material.

In some embodiments, the actuator comprises a counter electrode andelectrolyte, wherein the electrolyte is provided in contact with theelectrode and the one or more inorganic semiconductor components or theone or more metallic conductor components, wherein the user initiatedexternal trigger signal is a voltage or RF energy provided to thecounter electrode, thereby resulting in dissolution of the one or moreinorganic semiconductor components or the one or more metallic conductorcomponents. In an embodiment, for example, and the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents comprise the electrodes of an electrochemical cell and are incontact with an electrolyte.

In some embodiments, upon the device receiving the user initiatedexternal trigger signal, the actuator performs an operation selectedfrom the group consisting of opening or closing an electronic circuit,generating heat, resisting the flow of electricity, producingelectromagnetic radiation, producing acoustic energy, and dispersing achemical agent or biological agent.

When the actuator resists the flow of electricity, the temperature of atleast a portion of the device may be raised by at least 10° C., therebyinitiating thermal degradation of an encapsulating material provided onthe one or more inorganic semiconductor components or one or moremetallic conductor components, thereby exposing at least a portion ofthe one or more inorganic semiconductor components or one or moremetallic conductor components to the internal or external stimulus.

When the actuator produces electromagnetic radiation, it initiatesphotochemical degradation of an encapsulating material provided on theone or more inorganic semiconductor components or one or more metallicconductor components, thereby exposing at least a portion of the one ormore inorganic semiconductor components or one or more metallicconductor components to the internal or external stimulus.

When the actuator disperses a chemical agent, the chemical agent may,for example, be selected from the group consisting of water, saline, anacid, a base, and an enzyme; wherein the actuator delivers the chemicalagent to an encapsulating material provided on the one or more inorganicsemiconductor components or one or more metallic conductor components,thereby initiating chemical or enzymatic degradation of theencapsulating material provided on the one or more inorganicsemiconductor components or one or more metallic conductor components,thereby exposing at least a portion of the one or more inorganicsemiconductor components or one or more metallic conductor components tothe internal or external stimulus. As used herein, chemical agentbroadly refers generally to a chemical compound or mixture of compounds(e.g. solution) capable of initiating a chemical or physical change of amaterial, for example, capable of causing an a least partialtransformation of a semiconductor component, metallic conductorcomponent, dielectric component, substrate and/or encapsulating materialof the device.

When the actuator disperses a biological agent, the biological agentmay, for example, be selected from the group consisting of a protein, amodified protein, a peptide, a modified peptide, an oligonucleotide, anda nucleotide; wherein the actuator delivers the biological agent to anencapsulating material provided on the one or more inorganicsemiconductor components or one or more metallic conductor components,thereby initiating chemical or enzymatic degradation of theencapsulating material provided on the one or more inorganicsemiconductor components or one or more metallic conductor components,thereby exposing at least a portion of the one or more inorganicsemiconductor components or one or more metallic conductor components tothe internal or external stimulus. As used herein, biological agentbroadly refers generally to a biomolecule or mixture of biomoleculescapable of initiating a chemical or physical change of a material, forexample, capable of causing an a least partial transformation of asemiconductor component, metallic conductor component, dielectriccomponent, substrate and/or encapsulating material of the device.

In an embodiment, the programmable transformation provides a change ofthe function of the transient electronic device from a first conditionof operability to a second condition of inoperability. In an alternateembodiment, the programmable transformation provides a change of thefunction of the transient electronic device from a first conditioncorresponding to a first functionality to a second conditioncorresponding to a second functionality different from the firstfunctionality. The functionality may, for example, be an electronicfunctionality. In either embodiment, the programmable transformation mayprovide a change from a first condition characterized by two or moreinorganic semiconductor device components or metallic conductorcomponents in electrical contact with each other to a second conditioncharacterized by the two or more inorganic semiconductor devicecomponents or metallic conductor components not in electrical contactwith each other. In some embodiments, a programmable transformationphysically and/or electronically separates or isolates components of thetransient device, thereby resulting in the change of the function of thetransient device from the first condition to the second condition.

Incorporation of degradable or transformable materials in the presentinvention may also be implemented in a manner to facilitate removal,degradation and/or clearance of the transient devices and componentsthereof. In an embodiment, a device of the invention has a composition,geometry and/or physical dimensions such that upon at least partialdegradation or transformation of the substrate the device is broken upinto fragments that are efficiently processed and cleared by a subjector environment. In an embodiment, for example, the device is configuredsuch that upon at least partial degradation or transformation of thesubstrate the device is broken up into fragments having lateral andthickness dimensions less than 100 microns, optionally less than 10microns and optionally less than 1 micron, so as to facilitateprocessing and clearance of the device by a subject or environment.

A programmable transformation may be a pre-set programmabletransformation or a real-time trigger programmable transformation. Forexample, a pre-set transformation may occur at an elapsed or currenttime programmed into a timer of a device. At the specified time, a userinitiated external trigger signal that begins the transformation processmay be generated. A real-time transformation may be triggered, forexample, by energy applied by an external source or by a signaltransmitted by an external source and received by the device. Uponreceiving the signal from the external source, an actuator may initiatea transformation process.

In an embodiment, a programmable transformation may comprise completedissolution, degradation, removal or transformation of at least oneinorganic device component, at least one metallic conductor component orboth. For example, a programmable transformation of one or moreinorganic semiconductor components or one or more metallic conductorcomponents occurs by a process selected from the group consisting ofresorption, bioresorption, (chemical or enzymatic) hydrolysis,disintegration, de-polymerization, dissolution, sublimation, melting,etching, photodecomposition, corrosion and anodic dissolution. In anembodiment, a programmable transformation electronically isolates one ormore inorganic semiconductor device components or metallic conductorcomponents of a transient electronic device, thereby resulting in achange of the function of the transient electronic device from a firstcondition to a second condition. For example, the function of thetransient electronic device may be transformed from: (i) a NOR gate to aNAND gate; (ii) an inverter to an isolated transistor; (iii) a resistorto a diode; (iv) a NAND gate to an inverter; (v) a NOR gate to anisolated transistor; or (vi) a NAND gate to an isolated transistor.

A transient electronic device may be a passive electronic device or anactive electronic device. For example, the passive transient electronicdevice may be a communication system, a photonic device, a sensor, anoptoelectronic device, a biomedical device, a temperature sensor, aphotodetector, a photovoltaic device, a strain gauge, an imaging system,a wireless transmitter, an antenna, a nanoelectromechanical system, or amicroelectromechanical system. In a particular embodiment, the passivetransient electronic device is a sensor for detecting temperature,strain, pressure, electric potential, hydration state, incidentelectromagnetic radiation or chemical composition. In a particularembodiment, the passive transient electronic device is a communicationsystem that is fully dissolvable when in contact with water. In aparticular embodiment, the passive transient electronic device is aradio or antennae. In a particular embodiment, the passive transientelectronic device is a tissue mounted biomedical device. Exemplarytransient electronic devices include but are not limited to transistors,diodes, CMOS devices, MOSFET devices, photodiodes, light emittingdiodes, complementary logic circuits, light sensors, temperaturesensors, chemical sensors, mechanical sensors, electrical sensors,magnetic sensors, batteries, fuel cells, radios, and thermoelectric orpiezoelectric energy harvesters.

In an embodiment, the passive or active transient electronic device hasan average thickness less than or equal to 1000 microns, or optionally100 microns, or optionally 10 microns.

Useful inorganic semiconductor components include, but are not limitedto, flexible semiconductor structures, stretchable semiconductorstructures and/or semiconductor structures capable of undergoing achange in shape so as to conform to the surface of an environment. Insome embodiments, a transient electronic device may comprise a pluralityof inorganic semiconductor components. In an embodiment, the inorganicsemiconductor components comprise a semiconductor device such as atransistor, a transistor channel, a diode, a p-n junction, a photodiode,a light emitting diode, a laser, an electrode, an integrated electronicdevice, an integrated circuit, an antenna, an inductor, a resistor, asemiconductor based sensor, MESFETs, MOSFETs or combinations and/orarrays of these.

In some embodiments, the one or more inorganic semiconductor componentsor the one or more metallic conductor components independently comprisea nanostructured material or a microstructured material. In anembodiment, for example, the inorganic semiconductor components comprisea microstructured material or a nanostructured material such as a micro-or nano-ribbon, a micro- or nano-membrane, a micro- or nano-wire or amicro- or nano-porous material. As used herein, the term“microstructured” refers to a structure having at least one physicaldimension selected over the range of 1 micron to 1000 microns and theterm “nanostructured” refers to a structure having at least one physicaldimension selected over the range of 10 nanometers to 1000 nanometers.In an embodiment, the invention comprises a nanostructured inorganicsemiconductor component, metallic component or dielectric componentcomprising a microporous material having a plurality of pores with crosssection dimensions selected from the range of 1 □m to 1000 □m,optionally provided in an ordered network. In an embodiment, theinvention comprises a nanostructured inorganic semiconductor component,metallic component or dielectric component comprising a nanoporousmaterial having a plurality of pores with cross section dimensionsselected from the range of 1 nm to 1000 nm, optionally provided in anordered network.

The physical dimensions and shape of the device, and components thereof,are important parameters, particularly with respect to preselection of adesired transience profile. Use of thin inorganic semiconductorcomponents, metallic conductor components and/or dielectric components(e.g., thickness less than or equal to 100 microns, optionally thicknessless than or equal to 10 microns, optionally thickness less than orequal to 1 micron, optionally thickness less than or equal to 500nanometers, and optionally thickness less than or equal to 100nanometers) is beneficial for providing a preselected transience for agiven device application and/or providing useful mechanical propertiessuch as a flexible or otherwise deformable device. In some embodiments,inorganic semiconductor components, metallic conductor components and/ordielectric components independently comprise one or more thin filmstructures, which may for example be deposited or grown by molecularepitaxy, atomic layer deposition, physical or chemical vapor deposition,or other methods known in the art. In some embodiments, one or moreinorganic semiconductor components, metallic conductor components and/ordielectric components independently comprise a biocompatible,bioresorbable, bioinert or ecocompatible material. In some embodiments,at least some of, and optionally all of, the inorganic semiconductorcomponents, metallic conductor components and/or dielectric componentsof the electronic device have a thickness less than or equal to 100microns, and for some applications have a thickness less than or equalto 10 microns, and for some applications have a thickness less than orequal to 1 micron, and for some applications have a thickness less thanor equal to 500 nanometers, and for some applications have a thicknessless than or equal to 100 nanometers, and for some applications have athickness less than or equal to 20 nanometers. In some embodiments, atleast some of, and optionally all of, the inorganic semiconductorcomponents, metallic conductor components and/or dielectric componentsof the device independently have a thickness selected from a range of 10nm to 100 μm, optionally for some applications selected from a range of50 nm to 10 μm, and optionally for some applications selected from arange of 100 nm to 1000 nm. In an embodiment, for example, a device ofthe invention comprises one or more inorganic semiconductor componentseach independently having a thickness selected over the range of 10 nmto 1000 nm, optionally for some applications 10 nm to 100 nm andoptionally for some applications 10 nm to 30 nm. In some embodiments, atleast some of, and optionally all of, the inorganic semiconductorcomponents, metallic conductor components and/or dielectric componentsof the device independently have lateral physical dimensions (e.g.,length, width, diameter, etc.) less than or equal to 10000 μm, and forsome applications have lateral physical dimensions less than or equal to1000 μm, and for some applications have lateral physical dimensions lessthan or equal to 100 μm, and for some applications have lateral physicaldimensions less than or equal to 1 μm. In some embodiments, at leastsome of, and optionally all of, the inorganic semiconductor components,metallic conductor components and/or dielectric components of the deviceindependently have lateral physical dimensions selected from the rangeof 10 nm to 10 cm, optionally for some applications selected from arange of 100 nm to 10000 μm, optionally for some applications selectedfrom a range of 500 nm to 1000 μm, optionally for some applicationsselected from a range of 500 nm to 100 μm, and optionally for someapplications selected from a range of 500 nm to 10 μm.

As with other components of the transient device, the physicalproperties of the inorganic semiconductor components, metallic conductorcomponents and/or dielectric components (e.g., Young's modulus, netbending stiffness, toughness, conductivity, resistance, etc.) impact theperformance and transience of the device. In some embodiments, forexample, at least a portion, and optionally all, of the inorganicsemiconductor components, metallic conductor components and/ordielectric components of the device independently have a Young's modulusless than or equal to 10 GPa, optionally for some applications less thanor equal to 100 MPa, optionally for some applications less than or equalto 10 MPa. In some embodiments, for example, at least a portion, andoptionally all, of the inorganic semiconductor components, metallicconductor components and/or dielectric components of the device have aYoung's modulus selected over the range of 0.5 MPa and 10 GPa, andoptionally for some applications selected over the range of 0.5 MPa and100 MPa, and optionally for some applications selected over the range of0.5 MPa and 10 MPa. In some embodiments, at least a portion, andoptionally all, of the inorganic semiconductor components, metallicconductor components and/or dielectric components of the device have anet bending stiffness less than or equal to 1×10⁸ GPa μm⁴, optionallyfor some applications less than or equal to 5×10⁵ GPa μm⁴ and optionallyfor some applications less than or equal to 1×10⁵ GPa μm⁴. In someembodiments, at least a portion, and optionally all, of the inorganicsemiconductor, metallic conductor components and/or dielectriccomponents of the device have a net bending stiffness selected over therange of 0.1×10⁴ GPa μm⁴ and 1×10⁸ GPa μm⁴, and optionally for someapplications between 0.1×10 GPa μm⁴ and 5×10⁵ GPa μm⁴.

Useful materials for the inorganic semiconductor components include highquality semiconductor materials such as single crystalline semiconductormaterials including pure and doped single crystalline semiconductormaterials. In an embodiment, all of the inorganic semiconductorcomponents comprise a single crystalline semiconductor material and/or asingle crystalline doped semiconductor material, for example, singlecrystalline silicon and/or doped single crystalline silicon derived fromhigh temperature foundry processing. Integration of single crystallinesemiconductor materials into a transient device is particularlybeneficial for providing devices exhibiting very good electronicproperties. In an embodiment, the semiconductor components comprise amaterial selected from the group consisting of Si, Ge, Se, diamond,fullerenes, SiC, SiGe, SiO, SiO₂, SiN, AlSb, AlAs, AlIn, AlN, AlP, AlS,BN, BP, BAs, As₂S₃, GaSb, GaAs, GaN, GaP, GaSe, InSb, InAs, InN, InP,CsSe, CdS, CdSe, CdTe, Cd₃P₂, Cd₃As₂, Cd₃Sb₂, ZnO, ZnSe, ZnS, ZnTe,Zn₃P₂, Zn₃As₂, Zn₃Sb₂, ZnSiP₂, CuCl, PbS, PbSe, PbTe, FeO, FeS₂, NiO,EuO, EuS, PtSi, TlBr, CrBr₃, SnS, SnTe, Pbl₂, MoS₂, GaSe, CuO, Cu₂O,HgS, HgSe, HgTe, Hgl₂, MgS, MgSe, MgTe, CaS, CaSe, SrS, SrTe, BaS, BaSe,BaTe, SnO₂, TiO, TiO₂, Bi₂S₃, Bi₂O₃, Bi₂Te₃, BiI_(a), UO₂, UO₃, AgGaS₂,PbMnTe, BaTiO₃, SrTiO₃, LiNbO₃, La₂CuO₄, La_(0.7)Ca_(0.3)MnO₃, CdZnTe,CdMnTe, CuInSe₂, copper indium gallium selenide (CIGS), HgCdTe, HgZnTe,HgZnSe, PbSnTe, Tl₂SnTe₅, Tl₂GeTe₅, AlGaAs, AlGaN, AlGaP, AlInAs,AlInSb, AlInP, AlInAsP, AlGaAsN, GaAsP, GaAsN, GaMnAs, GaAsSbN, GaInAs,GaInP, AlGaAsSb, AlGaAsP, AlGaInP, GaInAsP, InGaAs, InGaP, InGaN,InAsSb, InGaSb, InMnAs, InGaAsP, InGaAsN, InAlAsN, GaInNAsSb, GaInAsSbP,and any combination of these. In some embodiments, the inorganicsemiconductor components include a material selected from the groupconsisting of Si, SiC, SiGe, SiO, SiO₂, SiN, and any combination ofthese. In some embodiments, the inorganic semiconductor componentsindependently comprise single crystalline silicon, porous silicon and/orpolycrystalline silicon. In some embodiments, the inorganicsemiconductor components independently comprise a polycrystallinesemiconductor material, single crystalline semiconductor material ordoped polycrystalline or single crystalline semiconductor material. Insome embodiments, the inorganic semiconductor component is atransformable material. Useful materials for a transformable, inorganicsemiconductor component include, but are not limited to, porous silicon,polycrystalline silicon, and any combination of these.

In some embodiments, the transient device may include one or moreadditional device components selected from the group consisting of anelectrode, a dielectric layer, a chemical or biological sensor element,a pH sensor, an optical sensor, an optical source, a temperature sensor,and a capacitive sensor. The additional device component may comprise abioinert material, a degradable material or a transformable material.Useful bioinert materials include, but are not limited to, titanium,gold, silver, platinum, and any combination of these. Useful degradableor transformable materials include, but are not limited to, iron,magnesium, tungsten and any combination of these.

In some embodiments, electronic devices comprise one or moreinterconnected island and bridge structures. For example, an islandstructure may comprise one or more semiconductor circuit components ofthe transient device. A bridge structure may comprise one or moreflexible and/or stretchable electrical interconnections providingelectrical communication between elements, for example between differentisland structures. In this manner, electronic devices of the presentinvention may comprise stretchable electronic devices having a pluralityof electrically interconnected inorganic semiconductor componentscomprising one or more island structures and one or more flexible and/orstretchable bridge structures providing electrical interconnection;e.g., stretchable electronic interconnects.

In some embodiments, at least a portion of the plurality of inorganicsemiconductor components comprise one or more of an amplifier circuit, amultiplexing circuit, a current limiting circuit, an integrated circuit,a transistor or a transistor array. Useful multiplexing circuits includethose configured to individually address each of a plurality ofelectrodes spatially arranged over the degradable substrate. Inaddition, the transient device may further comprise one or moreadditional device components selected from the group consisting of anelectrode, a dielectric layer, a chemical or biological sensor element,a pH sensor, an optical sensor, an optical source, a temperature sensor,and a capacitive sensor. At least one of the additional devicecomponents may comprise a bioinert material or a bioresorbable material.

In some embodiments, the transient device, or components thereof, areassembled on the substrate via a printing-based or molding-basedprocess, for example, by transfer printing, dry contact transferprinting, solution-based printing, soft lithography printing, replicamolding, imprint lithography, etc. In some of these embodiments,therefore, the device, or components thereof, comprise printablesemiconductor materials and/or devices. Integration of the device andsubstrate components via a printing-based technique is beneficial insome embodiments, as it allows for independent processing ofsemiconductor devices/materials and processing for the substrate. Forexample, the printing-based assembly approach allows semiconductordevices/materials to be processed via techniques that would not becompatible with some substrates. In some embodiments, for example, thesemiconductor device/materials are first processed via high temperatureprocessing, physical and chemical deposition processing, etching and/oraqueous processing (e.g. developing, etc.), and then subsequentlyassembled on the substrate via a printing-based technique. An advantageof this approach is that it avoids processing of the semiconductordevice/materials on the substrate in a manner that could negativelyimpact the chemical and/or physical properties of the substrate, forexample, by negatively impacting biocompatibility, toxicity and/or thedegradation properties (e.g., degradation rate, etc.) of thetransformable substrate. In some embodiments, for example, this approachallows for effective fabrication of the device without exposing thesubstrate to aqueous processing, for example, processing involvingexposure of the transformable substrate to an etchant, a stripper or adeveloper.

In some embodiments, at least a portion, and optionally all, of theplurality of inorganic semiconductor components of the device is bondedto the substrate. Bonding between the device and the substrate may beachieved directly involving covalent and noncovalent bonding (e.g., Vander Waals forces, hydrogen bonding, London dispersion forces, etc.)between layers and materials. Alternatively, bonding may be achieved byincorporation of an adhesive layer provided between the device and thesubstrate. Useful adhesive layers for bonding comprise a polymer, anelastomer (e.g. PDMS), a prepolymer, a thin metal layer, a silk layer,etc.

In some embodiments, for example, an encapsulating material functions toencapsulate portions of, or all of, the device, thereby preventingcurrent leakage to the local environment and/or electrical shorting ofthe device. In an embodiment, the encapsulating material encapsulates atleast 50% of the inorganic semiconductor components and/or metallicconductor components of the device, optionally at least 90% of theinorganic semiconductor components and/or metallic conductor componentsof the device, and optionally all of the inorganic semiconductorcomponents and/or metallic conductor components of the device. In anembodiment, the encapsulating material completely encapsulates thetransient device.

A variety of materials are useful for the degradable substrate of thepresent devices. In an embodiment, the substrate comprises a selectivelyremovable material. In an embodiment, the selectively removable materialof the substrate undergoes removal by a process selected from the groupconsisting of resorption, bioresorption, (chemical or enzymatic)hydrolysis, disintegration, de-polymerization, dissolution, sublimation,melting, etching and corrosion. In an embodiment, the substratecomprises a biocompatible, bioresorbable or ecocompatible material.Useful materials for the substrate include, for example, a biopolymer(e.g., protein, peptide, carbohydrate, polynucleotide, etc.), asynthetic polymer, a protein, a polysaccharide, silk,poly(glycerol-sebacate) (PGS), polydioxanone, poly(lactic-co-glycolicacid) (PLGA), polylactic acid (PLA), polyvinyl alcohol (PVA), gelatin,collagen, chitosan, fibroin, hyaluronic acid, protease particles,fluorescin, rose Bangal, rhodamine, reflectin, bacteriorhodopsin,hemoglobin, porphyrin and combinations of these. Useful silk materialsfor bioresorbable substrates include, for example, silkworm fibroin,modified silkworm fibroin, spider silk, insect silk, recombinant silk,and any combination of these. As used herein, modified silkworm fibroinrefers to a polymer composition that is derived via chemicalmodification of silkworm fibroin.

In some embodiments, the substrate and/or encapsulating materialcomprises silk, which may be in an at least partially crystalline state.For example, the silk may have a degree of crystallinity less than 55%,or selected over the range of 0 to 55%. In one embodiment, the substratecomprises a silk composite material. For example, the silk compositematerial may comprise silk having a plurality of nanoparticles dispersedthroughout the silk material, wherein the nanoparticles comprise aconductor (e.g., metal), semiconductor material, nanotube, nanowire,nanoshell (metallic shell with a dielectric core), pigments, dyes andcombinations thereof. In some embodiments, the nanoparticles comprise amaterial selected from the group consisting of Au, Ag, CsSe and CdTe.Typically, the nanoparticles have physical dimensions equal to or lessthan 1000 nm, and the nanoparticles are present in the silk material ata concentration selected from the range of 0.1 nM to 100 nM, or from therange of 0.5 nM to 50 nM, or from the range of 1 nM to 25 nM. In someembodiments, the nanoparticles absorb electromagnetic radiation, therebygenerating heat that is capable of triggering selective removal of thesubstrate. Absorbtion of electromagnetic energy for triggering a thermaldegradation process depends upon both nanoparticle concentration and thepower of the applied electromagnetic energy. In an embodiment,absorption of electromagnetic radiation is plasmonic-resonance enhancedabsorption.

In some embodiments, a transient substrate or encapsulating material maybe transformed by exposure to high temperature. For example, the glasstransition temperature of silk is ˜178° C. and degradation commences at˜220° C.

In some embodiments, transformation of a substrate or encapsulatingmaterial may be facilitated or expedited by a high concentration ofcertain salts (e.g., lithium salts, calcium salts) that permeabilize thesubstrate or encapsulating material.

In some embodiments, the substrate is a material that undergoeshydrolysis in an aqueous environment at a rate equal to or greater thanthe hydrolysis rate of the inorganic semiconductor component or metallicconductor component at 298K. In some embodiments, the substrate is amaterial that undergoes hydrolysis in an aqueous environment at a rateequal to or less than the hydrolysis rate of the inorganic semiconductorcomponent or metallic conductor component at 298K. In other embodiments,the substrate is a material that undergoes sublimation at a temperatureequal to or greater than 273 K.

The physical dimensions and physical properties of the transformablesubstrate are important parameters for supporting a range of devicefunctionalities and compatibility with different environments. In someembodiments, the transformable substrate has a thickness less than orequal to 10,000 μm, and optionally in some embodiments less than orequal to 1000 μm, and optionally in some embodiments less than or equalto 100 μm, and optionally in some embodiments less than or equal to 10μm; and optionally in some embodiments less than or equal to 1 μm. Useof a thin transformable substrate (e.g., thickness less than or equal to100 microns, optionally less than or equal to 10 microns and optionallyless than or equal to 1 micron) is useful for providing a flexible, orotherwise deformable, device capable of establishing conformal contactwith a wide range of environments, including environments havingcomplex, highly contoured surfaces. In some embodiments, thetransformable substrate has a thickness selected over the range of 5nanometers and 200 μm, optionally for some embodiments selected over therange of 10 nanometers and 100 μm, optionally for some embodimentsselected over the range of 100 nanometers and 10000 μm, optionally forsome applications selected over the range of 1 μm and 1000 μm, andoptionally for some embodiments selected over the range of 1 μm and 10μm. In embodiments where the transformable substrate is only a fewnanometers thick, a supporting substrate may be necessary orsupportability may be improved by a layer-by-layer deposition technique.In some embodiments, the composition and physical properties (e.g.,Young's modulus, net bending stiffness, toughness, etc.) of thetransformable substrate are selected to provide sufficient structuralsupport for the device component, while also providing an ability toachieve a high degree of conformal contact upon deployment. In someembodiments, the transformable substrate is a low modulus layer.Alternatively, the invention includes devices having a transformablesubstrate that is a high modulus layer. In some embodiments, forexample, the transformable substrate has a Young's modulus less than orequal to 10 GPa, preferably for some applications a Young's modulus lessthan or equal to 100 MPa, optionally for some applications less than orequal to 10 MPa. In some embodiments, for example, the transformablesubstrate has a Young's modulus selected over the range of 0.5 MPa and10 GPa, and optionally for some applications selected over the range of0.5 MPa and 100 MPa, and optionally for some applications selected overthe range of 0.5 MPa and 10 MPa. In some embodiments, for example, thetransformable substrate has a net bending stiffness less than or equalto 1×10⁹ GPa μm⁴, optionally for some applications less than or equal to1×10⁷ GPa μm⁴ and optionally for some applications less than or equal to1×10⁶ GPa μm⁴. In some embodiments, for example, the transformablesubstrate has a net bending stiffness selected over the range of 0.1×10⁴GPa μm⁴ and 1×10⁹ GPa μm⁴, and optionally for some applications between0.1×10⁴ GPa μm⁴ and 5×10⁵ GPa μm⁴.

The invention includes transformable substrates comprising amorphousmaterials, crystalline materials, partially amorphous materials,partially crystalline materials or combinations thereof. In anembodiment, the transient device of the invention includes an at leastpartially crystalline material, wherein the extent of crystallinity ofthe transformable substrate is selected to provide a useful and/orpreselected transformable rate for a selected environment and deviceapplication. In some embodiments, the larger the degree of crystallinityof the transformable substrate the slower the transformable rate whenprovided in contact with the environment. For example, the inventionincludes transient devices having a transformable substrate with adegree of crystallinity less than or equal to 55%, and optionally adegree of crystallinity less than or equal to 30% and optionally adegree of crystallinity less than or equal to 20%, and optionally adegree of crystallinity less than or equal to 5%. For example, theinvention includes transient devices having a transformable substratewith a degree of crystallinity selected over the range of 0 to 55%, andoptionally for some embodiments a degree of crystallinity selected overthe range of 1 to 30%, and optionally for some embodiments a degree ofcrystallinity selected over the range of 5 to 20%. As used herein, 0%crystallinity refers to an entirely amorphous material and the givendegree of crystallinity corresponds to the amount of a material providedin a crystalline state relative to the total amount of material. In someembodiments, for example those having a silk substrate, the degree ofcrystallinity refers to the beta sheet content of the silk substrate.

In some embodiments, the device includes a transformable substratehaving a programmable, controllable and/or selectable transformationrate when provided in contact with an environment. The inventionincludes devices having transformable substrates exhibiting a range oftransformation rates that are selected on the basis of an intendedapplication, device functionality, longevity, etc. In some embodiments,for example, the transformable substrate exhibits a high transformationrate so as to provide rapid and complete transformation uponadministration, for example, to facilitate conformational and/ormorphological changes useful for deploying the device in a particularenvironment. In other embodiments, for example, the transformablesubstrate exhibits a low resorption rate so as to provide slow and/orincomplete degradation upon administration, for example, to provideencapsulation of electronic components of the device and/or to providestructural properties useful for deploying or removing the device.

In an embodiment, a transient electronic device comprises an inorganicsemiconductor component and/or metallic conductor component comprising amaterial engineered to accelerate resorption, bioresorption, hydrolysis,disintegration, de-polymerization, dissolution, etching or corrosion.The engineered material may, for example, be a perforated structure. A“perforated structure” may comprise recessed features, holes, channels,cracks, or other physical defects that prevent a structure from beingmonolithic and contiguous within at least one major plane of thestructure. In an embodiment, one or more inorganic semiconductorcomponents or one or more metallic conductor components independentlycomprise one or more perforated structures. For example, the one or moreperforated structures may have a porosity (or void fraction) selectedfrom the range of 10%-80%, 20%-50% or 30%-40%. In an embodiment, theperforated structures may have a porosity greater than 20%, greater than30%, greater than 50%, or greater than 70%. “Porosity” generallydescribes a ratio of the volume of all the pores in a material to thevolume of the whole. As is known in the art, the porosity ratio may beexpressed as a percentage.

In an embodiment, one or more perforated structures may have a pluralityof recessed features or channels. In an embodiment, the recessedfeatures or channels extend entirely through a thickness of the one ormore inorganic semiconductor components or the one or more metallicconductor components. In an embodiment, the recessed features orchannels extend 0.1% to 100%, or 1% to 95%, or 5% to 85%, or 10% to 75%,or 25% to 50% through a thickness of the one or more inorganicsemiconductor components or the one or more metallic conductorcomponents. In an embodiment, the recessed features or channels extend alength selected over the range 10 nm to 10 mm through a thickness of theone or more inorganic semiconductor components or the one or moremetallic conductor components. In an embodiment, the recessed featuresor channels have lateral cross sectional dimensions selected from therange of 0.1 □m² to 10 cm², or 0.5 □m² to 5 cm², or 1 □m² to 1 cm², or10 □m² to 0.1 cm² and vertical dimensions selected from the range of0.01 □m to 10 mm, or 0.05 □m to 5 mm, or 0.1 □m to 1 mm, or 10 □m to 0.1mm.

In some embodiments, a transient electronic device comprises a reservoirfabricated from a material that is susceptible to degradation whenexposed to radiation of a particular wavelength. An aqueous solution orother chemical(s) in the reservoir may escape from the reservoir upondegradation of the radiation-susceptible material and interact withdevice components to accelerate their degradation or transformation.

The internal or external stimulus may, for example, be a change inbiological environment, a change in temperature, a change in pressure,exposure to electromagnetic radiation, contact with a chemical agent,application of an electric field, application of a magnetic field,exposure to a solvent, change in pH of an external environment, changein salt concentration of an external environment, or application of ananodic voltage.

In an embodiment, the transient electronic device includes a wirelesspower component comprising a selectively transformable material. In anembodiment, the wireless power component is a coil, a battery, a fuelcell, an energy harvester, a solar cell, or an inductor. The energyharvester may be selected from a thermoelectric component and apiezoelectric component.

In an embodiment, the transient electronic device is a sensor, a powersupply, an optoelectronic device, a nanoelectromechanical (NEM) device,or a microelectromechanical (MEM) device. When the transient electronicdevice is a sensor, the sensor may detect light intensity changes, lightwavelength changes, temperature changes, chemical changes, mechanicalchanges, electrical changes, magnetic changes, and combinations thereof.When the transient device is a power supply, the power supply may be acoil, a battery, a fuel cell, or an energy harvester. The energyharvester may be selected from a thermoelectric component or apiezoelectric component.

In an embodiment, the wireless power component converts theelectromagnetic energy via the photovoltaic effect, non-resonantinductive coupling, near-field mutual inductance coupling, or acombination thereof. When the wireless power component operates via thephotovoltaic effect, the wireless power component may be a solar cell orsolar array. When the wireless power component operates via non-resonantinductive coupling, the wireless power component may be an inductor thatconducts a current in response to an alternating magnetic field. Thedevice component being powered may be a resistor in electricalcommunication with the inductor. The resistor generates heat when thecurrent is conducted through the inductor. When the wireless powercomponent operates via near-field mutual inductance coupling, thewireless power component includes a scavenging rectifier. The scavengingrectifier absorbs radio energy through a scavenging antenna thatcollects ambient alternating current (AC) signals, wherein the ambientAC signals are converted into direct current (DC) by a rectifier. Aninput frequency of the scavenging rectifier is about 2.4 GHz. Arectified output of the scavenging rectifier is selected from the rangeof 1 V to 3 V.

In an embodiment, the device operates as a radio and further comprisesan oscillator coupled to a transmitting antenna for transmitting asignal indicative of a state of the transient electronic device or aparameter of an environment of the transient electronic device. Anoutput frequency of the oscillator may be about 1 GHz.

In an embodiment, a transient electronic device comprises one or moreinorganic semiconductor components. In some embodiments, each of the oneor more inorganic semiconductor components independently comprise ananomembrane structure, which may for example have a thickness less than1000 nm. In an embodiment, each of the inorganic semiconductorcomponents independently comprise Si, Ga, GaAs, ZnO or any combinationof these. In an embodiment, the one or more inorganic semiconductorcomponents comprise ZnO.

In an embodiment, one or more inorganic semiconductor componentsindependently comprise a semiconductor material that undergoeshydrolysis in an aqueous environment at a rate equal to or greater than10⁻¹⁰ s⁻¹ at 298 K, or equal to or greater than 10⁻⁸ s⁻¹ at 298 K, orequal to or greater than 10⁻⁵ s⁻¹ at 298 K, or equal to or greater than10⁻² s⁻¹ at 298 K.

In an embodiment, the transient electronic device comprises one or moremetallic conductor components, and the one or more metallic conductorcomponents of a transient electronic device may comprise Mg, W, Fe or analloy thereof. In a particular embodiment, the one or more metallicconductor components independently comprise an alloy of Mg with one ormore additional materials selected from the group consisting of Al, Ag,Ca, Li, Mn, Si, Sn, Y, Zn, and Zr, wherein the one or more additionalmaterials of the alloy has a concentration equal to or less than 10% byweight. In another embodiment, the one or more metallic conductorcomponents independently comprise an alloy of Mg with one or more rareearth elements, wherein the one or more rare earth elements of the alloyhas a concentration equal to or less than 10% by weight. In anotherembodiment, the transient electronic device includes one or moreinorganic semiconductor components comprising ZnO and one or moremetallic conductor components comprising Mg, Fe, W or an alloy thereof.

In an embodiment, one or more metallic conductor componentsindependently comprise a semiconductor material that undergoeshydrolysis in an aqueous environment at a rate equal to or greater than10⁻¹⁰ s⁻¹ at 298 K, or equal to or greater than 10⁻⁸ s⁻¹ at 298 K, orequal to or greater than 10⁻⁵ s⁻¹ at 298 K, or equal to or greater than10⁻² s⁻¹ at 298 K.

In an embodiment, a transient electronic device may comprise one or moredielectric components supported by the substrate, wherein the one ormore dielectric components comprise a selectively removable material. Inan embodiment, the selectively removable material of the one or moredielectric components may undergo removal by a process selected from thegroup consisting of resorption, bioresorption, hydrolysis,disintegration, de-polymerization, dissolution, sublimation, melting,etching and corrosion. In some embodiments, one or more dielectriccomponents comprise biocompatible, bioresorbable or ecocompatiblematerial. In some embodiments, each of the dielectric componentscomprises one or more thin film structures, which may for example bedeposited or grown by molecular epitaxy, atomic layer deposition,physical or chemical vapor deposition, or other methods known in theart. Typically, each of the one or more dielectric components has athickness selected over the range of 10 nm to 50 □m, or a thickness lessthan or equal to 100 nm or a thickness less than or equal to 10 nm.

In an embodiment, the one or more dielectric components may comprise oneor more materials selected from the group consisting of SiO₂, MgO, silk,collagen, gelatin, PVA and PLGA. In a particular embodiment, thetransient electronic device includes one or more inorganic semiconductorcomponents selected from the group consisting of ZnO and Si, one or moremetallic conductor components selected from the group consisting of Mg,Fe, W and alloys thereof and one or more dielectric components selectedfrom the group consisting of SiO₂ and MgO. In another embodiment, thetransient electronic device includes one or more inorganic semiconductorcomponents comprising ZnO, one or more metallic conductor componentsselected from the group consisting of Mg, Fe, W and alloys thereof andone or more dielectric components comprising MgO. In an embodiment, oneor more dielectric components comprise a material that undergoeshydrolysis in an aqueous environment at a rate equal to or greater than10⁻¹⁰ s⁻¹ at 298 K, or equal to or greater than 10⁻⁸ s⁻¹ at 298 K, orequal to or greater than 10⁻⁵ s⁻¹ at 298 K, or equal to or greater than10⁻² s⁻¹ at 298 K.

The one or more inorganic semiconductor components, the one or moremetallic conductor components or the one or more dielectric componentsmay be assembled on the substrate by microtransfer printing.

In an embodiment, the substrate, the one or more inorganic semiconductorcomponents, and the one or more metallic conductor componentsindependently comprise a selectively removable material.

In an embodiment, the transient electronic device may further comprisean adhesion promoting layer disposed between the substrate and at leasta portion of the metal conductor components. For example, the adhesionpromoting layer may comprise a material selected from the groupconsisting of magnesium oxide, titanium, and combinations thereof.

The transient electronic device has a neutral mechanical plane and, insome embodiments, at least a portion, and optionally all, of the one ormore inorganic semiconductor components are positioned proximate (e.g.,within 10 microns, and optionally within 1 micron) to the neutralmechanical plane. A thickness of the transformable substrate may beselected so as to position at least a portion of the one or moreinorganic semiconductor components proximate to the neutral mechanicalplane. Embodiments having inorganic semiconductor components positionedproximate to the neutral mechanical plane are useful for applicationswhere the device undergoes a significant change in conformation upondeployment, for example, by enhancing the structural integrity of thedevice when provided in a non-planar (e.g., bent, curved, convex,concave, etc.) conformation and/or in a stretched conformation.

In some embodiments, a transient device may be partially or completelyencapsulated in a package material. In an embodiment, the packagematerial comprises a pair of cross-linked silk sheets that completelyencapsulate the device when edges of the sheets are laminated together.For example, the sheets may be two freestanding silk films formed bycasting and peeling, which are then sealed along the edges bylamination. Generally, the sheets will have a thickness selected fromthe range of 1 micron to 200 microns, or from 2 microns to 100 microns,or from 5 microns to 50 microns. From a practical point of view, a filmthinner than 1 micron (while freestanding) may be difficult to make andhandle using some techniques, while a film thicker than 200 microns maybe rigid and susceptible to cracking during handling using sometechniques. Alternatively, in some embodiments, the package material maybe a pre-formed hollow silk tube having a thickness selected over therange of 1 micron to 1 centimeter, optionally for some applications 5microns to 2 millimeters, and optionally for some applications 10microns to 50 microns. Typically, the package material has a thicknessof about 20 μm per sheet.

In an embodiment, an encapsulating material at least partiallyencapsulates one or more inorganic semiconductor components or one ormore metallic conductor components, wherein the encapsulating materialcomprises a selectively removable material that is at least partiallyremoved to expose underlying inorganic semiconductor components ormetallic conductor components. In an embodiment, the encapsulatingmaterial is removed in response to the external or internal stimulus.

In an embodiment, the encapsulating material is an overlayer provided onthe one or more inorganic semiconductor components or provided on theone or more metallic conductor components; wherein the overlayer has athickness selected over the range of 10 nm to 10 mm, or 20 nm to 1 mm,or 50 nm to 0.1 mm. The encapsulating material may be provided directlyon the one or more inorganic semiconductor components or the one or moremetallic conductor components or indirectly with one or moreintermediate structures/layers between the encapsulating material andthe one or more inorganic semiconductor components or the one or moremetallic conductor components.

In an embodiment, the encapsulating material has a preselectedtransience profile different than the preselected transience profile ofthe one or more inorganic semiconductor components or the one or moremetallic conductor components. For example, in an embodiment, thetransience profile may be at least one order of magnitude larger thanthat of the one or more inorganic semiconductor components or the one ormore metallic conductor components.

In an embodiment, the transience profile may be characterized by theremoval of the encapsulating material occurring over a time intervalselected from the range of 1 ms to 2 years, or 1 ms to 1 year, or 1 msto 6 months, or 1 ms to 1 month, or 1 ms to 1 day, or 1 ms to 1 hour, or1 second to 10 minutes, thereby exposing the underlying inorganicsemiconductor components or metallic conductor components. For example,the transience profile may be characterized by the removal of 0.01% to100%, or 0.1% to 70%, or 0.5% to 50%, or 1% to 20% or 1% to 10% of theencapsulating material over a time interval selected from the range of 1ms to 2 years, or 1 ms to 1 year, or 1 ms to 6 months, or 1 ms to 1month, or 1 ms to 1 day, or 1 ms to 1 hour, or 1 second to 10 minutes,thereby exposing the underlying inorganic semiconductor components ormetallic conductor components. In an embodiment, the transience profilemay be characterized by a decrease in the average thickness of theencapsulating material at a rate selected over the range of 0.01 nm/dayto 10 microns s⁻¹, or 0.1 nm/day to 1 micron s⁻¹, or 1 nm/day to 0.5micron s⁻¹.

In an embodiment, the encapsulating material comprises a materialselected from the group consisting of MgO, silk, collagen, gelatin,PLGA, polyvinylalcohol (PVA), PLA, SiO₂, polyanhydrides (polyesters),polyhydroxyalkanoates (PHAs) and polyphosphates. In an embodiment, theencapsulating material comprises silk, where the silk may be in an atleast partially crystalline state. For example, the silk may have adegree of crystallinity less than 55%, or selected over the range of 1to 55%. In an embodiment, an encapsulating material comprises a pair ofcross-linked silk sheets that completely encapsulate the transientelectronic device when edges of the sheets are laminated together.

In some embodiments, the encapsulating material comprises a silkcomposite material. The silk composite material may comprise silk havinga plurality of nanoparticles dispersed throughout the silk, wherein eachof the nanoparticles independently comprise a conductor or semiconductormaterial. For example, each of the nanoparticles may independentlycomprise a material selected from the group consisting of Au, Ag, CsSeand CdTe. Typically, the nanoparticles have physical dimensions equal toor less than 1000 nm, and the nanoparticles are present in the silk at aconcentration selected from the range of 0.1 nM to 100 nM. In someembodiments, the nanoparticles absorb electromagnetic radiation, therebygenerating heat that is capable of causing selective removal of theencapsulating material. For example, the absorbtion of electromagneticradiation may be plasmonic-resonance enhanced absorption.

In some embodiments, the encapsulating material is a material thatundergoes hydrolysis in an aqueous environment at a rate equal to orgreater than 10⁻¹⁰ s⁻¹ at 298 K, or equal to or greater than 10⁻⁸ s⁻¹ at298 K, or equal to or greater than 10⁻⁵ s⁻¹ at 298 K, or equal to orgreater than 10⁻² s⁻¹ at 298 K. In other embodiments, the encapsulatingmaterial is a material that undergoes sublimation at a temperature equalto or greater than 273 K. For example, the sublimable encapsulatingmaterial may be a material selected from the group consisting of CO₂,I₃, naphthalene, ammonium chloride, iron chloride, aluminum chloride,melamine, nickelocene, camphor, and caffeine.

In some embodiments, the encapsulating material is a composite materialcomprising a plurality of sublimable fibers provided in a nonsublimablematerial, wherein sublimation of the sublimable fibers results inselective removal of the encapsulating material. The composite materialmay, for example, be solution casted, electrospun or spin castedmaterial.

The time for the thickness of selectively removable materials to reachzero is given by:

$t_{c} = {\frac{4\rho_{m}M\mspace{14mu}\left( {H_{2}O} \right)}{{kw}_{0}M\mspace{14mu}(m)}\frac{\sqrt{\frac{{kh}_{0}^{2}}{D}}}{\tanh\sqrt{\frac{{kh}_{0}^{2}}{D}}}}$where t_(c) is the critical time, ρ_(m) is the mass density of thematerial, M(H₂O) is the molar mass of water, M(m) is the molar mass ofthe material, h₀ is the initial thickness of the material, D is thediffusivity of water, k is the reaction constant for the dissolutionreaction, and w₀ is the initial concentration of water, wherein k has avalue selected from the range of 10⁵ to 10⁻¹⁹ s⁻¹, or from the range of10³ to 10⁻⁷ s⁻¹, or from the range of 10² to 10⁻⁴ s⁻¹, or from the rangeof 10 to 10⁻² s⁻¹.

In an embodiment, the physical properties of the transient device (e.g.,Young's modulus, net bending stiffness, toughness, etc.) providerigidity for the device to be self-supporting, while also being capableof achieving a high degree of conformal contact with an environment. Inan embodiment, the substrate, the device having one or more inorganicsemiconductor components, and the one or more metallic conductorcomponents provide a net bending stiffness of the transient device ofless than 1×10⁹ GPa μm⁴, or a net bending stiffness selected from arange of 0.1×10⁴ GPa μm⁴ to 1×10⁸ GPa μm⁴, optionally 1×10⁵ GPa μm⁴ to1×10⁸ GPa μm⁴. In some embodiments, the substrate, the inorganicsemiconductor components and the one or more metallic conductorcomponents each independently comprise a transformable material.

In an embodiment, the transient device, and/or components thereof, areat least partially optically transparent with respect to visible and/orinfrared electromagnetic radiation. In an embodiment, for example, thetransient device, substrate, inorganic semiconductor components and/ormetallic conductor components exhibit a percentage transmission forlight in the visible region of the electromagnetic spectrum equal to orgreater than 70% and equal to or greater than 90% for some applications.At least partially optically transparent devices are useful forvisualizing and/or imaging the device during administration and/or use.In addition, devices of the invention that are at least partiallyoptically transparent are useful for coupling electromagnetic radiationinto and/or out of the device. The invention includes, for example,devices having an LED or laser array component for illuminating anenvironment or optical sensing, wherein the device is capable oftransmitting light from the device component through other components ofthe device, such as the substrate.

In some biological environments, such as an in vivo biologicalenvironment, the degradation of the substrate occurs via enzymaticdegradation, for example, via protease mediated degradation. Inaddition, degradation occurs in some embodiments from the surfaces ofthe bioresorbable substrate that are exposed to the biologicalenvironment having degradation enzymes present, such as at the interfacewith a tissue and/or biological fluid. Accordingly, certain parametersof the degradable substrate may be selected to effectively control thedegradation rate. In an embodiment, the chemical composition, physicalstate and/or thickness of the degradable substrate is selected so as tocontrol the degradation rate. In an embodiment, for example, thedegradable substrate comprises a biopolymer exhibiting a usefuldegradation rate for a selected biological environment.

In some specific embodiments, transient devices of the invention do notinclude a substrate component. In an embodiment, for example, thetransient devices of the invention initially includes a substratecomponent, which is selectively removed during deployment and/oroperation such that the device makes a transition to a transient devicenot having a substrate. An embodiment of this aspect includes atransient device for biomedical applications, wherein contact with abiological environment, such as contact with a tissue or cell in vivo,results in loss of the substrate via bioresoprtion.

Devices of some aspects are useful generally for in vivo biomedicalapplications including sensing, actuating, imaging and/or delivery oftherapeutic agents to a local biological environment. In an embodiment,for example, devices of the invention are useful for makingelectrophysiology measurements of a target tissue in a biologicalenvironment or for electrophysically actuating a target tissue in abiological environment, where the biological environment may be an invivo biological environment, and where the target tissue may be selectedfrom, but not limited to, heart tissue, brain tissue, muscle tissue,nerve tissue, epithelial tissue and vascular tissue.

The geometry and/or morphology of the substrate are othercharacteristics important to establishing the functional capabilities ofthe present devices. In an embodiment, the substrate is a continuouslayer having approximately uniform thickness (e.g., thicknesses within10% of average thickness of the layer). Alternatively, the inventionincludes devices having a substrate comprising a discontinuous layerand/or a layer having a nonuniform thickness profile. The inventionincludes transient devices having additional substrates and/or layers,for example, for partial or full encapsulation and/or electronicisolation of device components (e.g., semiconductors, metallic conductorcomponents, dielectrics, etc.).

The physical dimensions, composition and geometry of metallic conductorcomponents are important parameters of electronic devices of theinvention. In an embodiment, metallic conductor components are metalfilms, for example thin (e.g., thickness <100 microns) metal films. Useof thin metallic conductor components (e.g., thickness less than orequal to 100 microns, optionally less than or equal to 10 microns andoptionally less than or equal to 1 micron) is useful for providing aflexible, or otherwise deformable, device. In some embodiments, one ormore metallic conductor components comprise one or more thin filmstructures, which may for example be deposited or grown by molecularepitaxy, atomic layer deposition, physical or chemical vapor deposition,or other methods known in the art. In some embodiments, metallicconductor components comprise a biocompatible, bioresorbable orecocompatible material. In an embodiment, at least a portion, andoptionally all of, the metallic conductor components comprise abiocompatible metal, such as titanium, gold, silver, platinum, and anycombination of these. In an embodiment, at least a portion, andoptionally all of, the metallic conductor components comprise atransformable metal, such as of iron, magnesium, tungsten and anycombination of these. In an embodiment, each of the metallic conductorcomponents has a thickness less than or equal to 10 microns, andoptionally each of the metallic conductor components has a thicknessless than or equal to 1 micron, and optionally each of the metallicconductor components has a thickness less than or equal to 500nanometers, and optionally each of the metallic conductor components hasa thickness less than or equal to 100 nm, and optionally each of themetallic conductor components has a thickness less than or equal to 20nm. In an embodiment, each of the metallic conductor components has athickness selected over the range of 10 nanometers to 100 microns, andoptionally a thickness selected over the range of 100 nanometers to 1micron, and optionally a thickness selected over the range of 100nanometers to 500 nanometers. In an embodiment, each of the metallicconductor components has lateral dimensions less than or equal to 10000microns, and optionally lateral dimensions less than or equal to 1000microns, and optionally lateral dimensions less than or equal to 100microns, and optionally lateral dimensions less than or equal to 10microns. In an embodiment, metallic conductor components in an array areseparated from adjacent metallic conductor components by a distancegreater than or equal to 10 microns, and optionally a distance greaterthan 100 microns. In an embodiment, adjacent metallic conductorcomponents are separated from each other by a distance selected from therange of 10 microns to 10 millimeters, and optionally the range of 10microns to 1000 microns, and optionally the range of 10 to 100 microns.

Degradation of the substrate is useful for deploying, or otherwisepositioning, manipulating and/or interfacing the transient device (e.g.,a surface, a portion and/or component thereof) in a given environment.In some embodiments, for example, the transient device is brought intoconformal contact with an environment by a process involving degradationor transformation of the substrate, for example, wherein a degradationprocess brings the transient device in contact (e.g., physical,electrical, thermal, etc.) with the environment, and optionally whereinthe degradation process causes conformal and/or morphological changes tothe transient device that assist in interfacing the device with theenvironment. In some embodiments, the device is deployed in, orotherwise positioned, manipulated and/or interfaced with, an environmentvia a process involving complete degradation or transformation of thesubstrate, for example, so as to provide the transient device inphysical contact, electrical contact or optical communication with anenvironment. In some embodiments of this aspect, therefore, thedegradable or transformable layer functions as a sacrificial layerduring deployment so as to facilitate interfacing the transient devicewith the environment. Alternatively, in other embodiments, the device isdeployed in, or otherwise positioned, manipulated and/or interfacedwith, an environment via a process involving partial, but not complete,degradation or transformation of the substrate, for example, so as toprovide the transient device in physical contact, electrical contact oroptical communication with an environment. In some embodiments of thisaspect, therefore, the degradable or transformable layer functions as apartial sacrificial layer during deployment but remains as a structuraland/or functional component of the device during use. In someembodiments, for example, partial or complete degradation ortransformation of the substrate provides a means of selectivelyadjusting and/or manipulating the physical dimensions, conformation,morphology and/or shape of the transient device so as to facilitateestablishing conformal contact with an environment. In some embodiments,partial or complete degradation or transformation of the substrateprovides a means of selectively adjusting the chemical composition ofthe transient device so as to establish conformal contact with anenvironment in a compatible manner, such as in a manner suppressingundesirable immune response and/or inflammation.

Methods, disclosed herein, of making and using transient electronicdevices may be implemented to produce or utilize all embodiments of thetransient electronic devices disclosed herein.

In an aspect, a method of using a passive transient electronic devicecomprises: providing the passive transient electronic device comprising:a substrate; one or more inorganic semiconductor components, one or moremetallic conductor components or one or more inorganic semiconductorcomponents and one or more metallic conductor components supported bythe substrate; wherein the one or more inorganic semiconductorcomponents or one or more metallic conductor components independentlycomprise a selectively transformable material, wherein the one or moreinorganic semiconductor components or the one or more metallic conductorcomponents have a preselected transience profile in response to anexternal or internal stimulus; wherein at least partial transformationof the one or more inorganic semiconductor components or the one or moremetallic conductor components provides a programmable transformation ofthe passive transient electronic device in response to the external orinternal stimulus and at a pre-selected time or at a pre-selected rate,wherein the programmable transformation provides a change of thefunction of the passive transient electronic device from a firstcondition to a second condition; and exposing the passive transientdevice to the external or internal stimulus, thereby programmablytransforming the passive transient electronic device.

In an aspect, a method of using an actively triggered transientelectronic device, comprises: providing the actively triggered transientelectronic device comprising: a substrate; one or more inorganicsemiconductor components, one or more metallic conductor components orone or more inorganic semiconductor components and one or more metallicconductor components supported by the substrate; wherein the one or moreinorganic semiconductor components or the one or more metallic conductorcomponents independently comprise a selectively transformable material,wherein the one or more inorganic semiconductor components or the one ormore metallic conductor components have a preselected transience profilein response to an external or internal stimulus; and an actuatorresponsive to a user initiated external trigger signal and operablyconnected to the one or more inorganic semiconductor components or theone or more metallic conductor components, wherein upon the devicereceiving the external trigger signal the actuator directly orindirectly initiates at least partial transformation of the one or moreinorganic semiconductor components or the one or more metallic conductorcomponents in response to the internal or external stimulus, therebyproviding a programmable transformation of the actively triggeredtransient electronic device in response to the external trigger signal,wherein the programmable transformation provides a change of thefunction of the actively triggered transient electronic device from afirst condition to a second condition; and exposing the activelytriggered transient electronic device to the external or internalstimulus, thereby programmably transforming the actively triggeredtransient electronic device.

In an aspect, a method of making a transient electronic device comprisesthe steps of: providing a device substrate; providing on the devicesubstrate one or more inorganic semiconductor components, one or moremetallic conductor components or one or more inorganic semiconductorcomponents and one or more metallic conductor components; wherein theone or more inorganic semiconductor components or one or more metallicconductor components independently comprise a selectively transformablematerial, wherein the one or more inorganic semiconductor components orthe one or more metallic conductor components have a preselectedtransience profile in response to an external or internal stimulus;thereby generating the transient electronic device; wherein at leastpartial transformation of the one or more inorganic semiconductorcomponents or the one or more metallic conductor components provides aprogrammable transformation of the passive transient electronic devicein response to the external or internal stimulus and at a pre-selectedtime or at a pre-selected rate, wherein the programmable transformationprovides a change in function of the passive transient electronic devicefrom a first condition to a second condition.

In an embodiment, the selectively transformable material is selectedfrom the group consisting of Mg, W, Fe, an alloy of Mg with one or moreadditional materials selected from the group consisting of Al, Ag, Ca,Li, Mn, Si, Sn, Y, Zn, and Zr, wherein the one or more additionalmaterials of the alloy has a concentration equal to or less than 10% byweight, and an alloy of Mg with one or more rare earth elements, whereinthe one or more rare earth elements of the alloy has a concentrationequal to or less than 10% by weight.

In an embodiment, the selectively transformable material is selectedfrom the group consisting of Si, Ga, GaAs, and ZnO.

In some fabrication processes, the step of providing on the devicesubstrate the one or more inorganic semiconductor components, one ormore metallic conductor components or one or more inorganicsemiconductor components and one or more metallic conductor componentscomprises: fabricating an assembly of device components on a fabricationsubstrate, wherein the assembly of device components comprises one ormore single crystalline inorganic semiconductor structures, one or moredielectric structures or one or more metallic conductor structures; andtransferring at least a portion of the assembly of device componentsfrom the fabrication substrate to the device substrate. In anembodiment, the device components on the fabrication substrate comprisesingle crystalline Si, Ga or GaAs. In another embodiment, the devicecomponents on the fabrication substrate comprise SiO₂.

In an embodiment, a method of making a transient electronic devicefurther comprises a step of providing the one or more inorganicsemiconductor components or one or more metallic conductor componentscomprising the selectively transformable material on the devicesubstrate having the assembly of device components. For example, in anembodiment, the step of providing the one or more inorganicsemiconductor components or one or more metallic conductor componentscomprising the selectively transformable material on the devicesubstrate having the assembly of device components is carried out usinga solution processing technique. In another embodiment, the step ofproviding the one or more inorganic semiconductor components or one ormore metallic conductor components comprising the selectivelytransformable material on the device substrate having the assembly ofdevice components is carried out using electrohydrodynamic printing.

In some embodiments, the step of fabricating the assembly of devicecomponents on a fabrication substrate is carried out at a semiconductorfoundry. The fabrication substrate may, for example, be a semiconductorwafer substrate, a glass plate-type substrate, or a silicon-on-insulatorsubstrate. In some embodiments, the step of fabricating the assembly ofdevice components on a fabrication substrate is carried out using one ormore high temperature deposition techniques selected from the groupconsisting of chemical vapor deposition, physical vapor deposition,epitaxial growth, atomic layer deposition, electrochemical deposition,and molecular beam epitaxy. The step of fabricating the assembly ofdevice components on a fabrication substrate may be carried out underclean room conditions according to recognized standards, such as US FEDSTD 209E, ISO 14644-1, or BS 5295 cleanroom standards. Embodiments ofthe invention using foundry processing are beneficial for accessing highquality semiconductor and dielectric materials, such as singlecrystalline silicon and SiO₂, in useful device formats and layouts. Insome embodiments, for example, methods of the invention includes ahybrid processes involving some processing steps carried out in afoundry (e.g., fabrication of high quality single crystalline siliconand SiO₂ device elements in a specific devise design) and otherprocessing steps carried out using non-foundry techniques, such assolution phase processing. This hybrid approach leverages access to thehigh quality materials produced via foundry based techniques withflexibility for integration of a range of selectively transformablematerials allowed by non-foundry techniques.

In some embodiments, the step of fabricating the assembly of devicecomponents on a fabrication substrate is carried out using one or morehigh temperature doping techniques and/or one or more high temperatureannealing techniques. In some embodiments, the step of fabricating theassembly of device components on the fabrication substrate comprisesgenerating a fully processed primitive or circuit element supported bythe fabrication substrate.

In some embodiments, the step of fabricating the assembly of devicecomponents on a fabrication substrate is carried out using aphotolithography or etching technique.

In some embodiments, the step of fabricating the assembly of devicecomponents on a fabrication substrate comprises generating one or morestructures selected form the group consisting of: one or more singlecrystalline silicon semiconductor structures on the fabricationsubstrate each independently having a thickness less than or equal to 1micron; one or more SiO₂ structures on the fabrication substrate eachindependently having a thickness less than or equal to 1 micron; and oneor more metallic structures on the fabrication substrate eachindependently having a thickness less than or equal to 5 microns. In anembodiment, the step of fabricating the assembly of device components ona fabrication substrate comprises (1) laterally defining one or moresingle crystalline silicon semiconductor structures supported by thefabrication substrate, for example via photolithography and etchingprocessing; (2) depositing one or more metallic structures on thefabrication substrate, for example via chemical or physical deposition;and (3) growing one or more SiO₂ structures.

In an embodiment, a method of making a transient electronic devicefurther comprises a step of replacing at least a portion of the one ormore single crystalline inorganic semiconductor structures, the one ormore metallic conductor structures or the one or more dielectricstructures with the selectively transformable material. For example, inan embodiment, the step of replacing at least a portion of the one ormore single crystalline inorganic semiconductor structures, the one ormore metallic conductor structures or the one or more dielectricstructures with the selectively transformable material is not carriedout at a semiconductor foundry.

In some embodiments, the step of replacing at least a portion of the oneor more single crystalline inorganic semiconductor structures, the oneor more metallic conductor structures or the one or more dielectricstructures with the selectively transformable material is carried outusing solution processing. In other embodiments, the step of replacingat least a portion of the one or more single crystalline inorganicsemiconductor structures, the one or more metallic conductor structuresor the one or more dielectric structures with the selectivelytransformable material is carried out using electrohydrodynamicprinting.

In an embodiment, the method of making a transient electronic devicecomprises the step of replacing at least a portion of the one or moremetallic conductor structures with the one or more selectivelytransformable metallic conductor materials.

In some embodiments, the one or more metallic conductor structures arereplaced with a selectively transformable metal selected from the groupconsisting of Mg, W, Fe, an alloy of Mg with one or more additionalmaterials selected from the group consisting of Al, Ag, Ca, Li, Mn, Si,Sn, Y, Zn, and Zr, wherein the one or more additional materials of thealloy has a concentration equal to or less than 10% by weight, and analloy of Mg with one or more rare earth elements, wherein the one ormore rare earth elements of the alloy has a concentration equal to orless than 10% by weight.

In an embodiment, the method of making a transient electronic devicecomprises the step of replacing at least a portion of the one or moremetallic conductor structures comprising Au or Al with the selectivelytransformable material.

In some embodiments, a method of making a transient electronic devicefurther comprises a step of releasing at least a portion of the assemblyof device components from the fabrication substrate. For example, thestep of releasing at least a portion of the assembly of devicecomponents from the fabrication substrate may be carried out by at leastpartially undercutting the one or more single crystalline inorganicsemiconductor structures, the one or more dielectric structures and theone or more metallic conductor structures. Undercutting may be achievedvia etching underneath the one or more single crystalline inorganicsemiconductor structures, the one or more dielectric structures and theone or more metallic conductor structures.

In an embodiment, the fabrication substrate is a silicon-on-insulatorsubstrate, and the method comprises at least partially etching a buriedoxide layer of the silicon-on-insulator substrate, thereby at leastpartially undercutting the one or more single crystalline inorganicsemiconductor structures, the one or more dielectric structures and theone or more metallic conductor structures.

In an embodiment, the step of releasing at least a portion of theassembly of device components from the fabrication substrate is carriedout by microtransfer printing, which lifts off at least a portion of theone or more single crystalline inorganic semiconductor structures, theone or more dielectric structures and the one or more metallic conductorstructures from the fabrication substrate. In some embodiments, themicrotransfer printing fractures one or more anchors connecting the oneor more single crystalline inorganic semiconductor structures, the oneor more dielectric structures and the one or more metallic conductorstructures to the fabrication substrate, thereby providing the liftoff.

In an embodiment, the microtransfer printing is dry transfer contactprinting. The microtransfer printing technique may comprise: contactingat least a portion of the one or more single crystalline inorganicsemiconductor structures, the one or more dielectric structures and theone or more metallic conductor structures with a contact surface of aconformal transfer device, wherein at least a portion of the one or moresingle crystalline inorganic semiconductor structures, the one or moredielectric structures and the one or more metallic conductor structuresare adhered to the contact surface; and moving the conformal transferdevice having the portion of the one or more single crystallineinorganic semiconductor structures, the one or more dielectricstructures and the one or more metallic conductor structures adhered tothe contact surface, thereby providing the liftoff.

In some embodiments, the microtransfer printing technique furthercomprises: contacting a receiving surface of the device substrate withthe at least a portion of the one or more single crystalline inorganicsemiconductor structures, the one or more dielectric structures and theone or more metallic conductor structures adhered to the contactsurface; and separating the contact surface of conformal transfer deviceand the one or more single crystalline inorganic semiconductorstructures, the one or more dielectric structures and the one or moremetallic conductor structures, thereby transferring the one or moresingle crystalline inorganic semiconductor structures, the one or moredielectric structures and the one or more metallic conductor structuresto the receiving surface of the device substrate. In some embodiments,the conformal transfer device is an elastomeric stamp.

In some embodiments, a method of making a transient electronic devicefurther comprises the step of providing an actuator responsive to a userinitiated external trigger signal and operably connected to the one ormore inorganic semiconductor components or the one or more metallicconductor components, wherein upon the device receiving the externaltrigger signal the actuator directly or indirectly initiates the atleast partial transformation of the one or more inorganic semiconductorcomponents or the one or more metallic conductor components in responseto the internal or external stimulus, thereby providing the programmabletransformation of the transient electronic device in response to theexternal trigger signal.

In some embodiments, a method of making a transient electronic devicefurther comprises the step of providing a receiver for receiving theuser initiated external trigger signal, the receiver operationallyconnected to the actuator so as to initiate the at least partialtransformation of the one or more inorganic semiconductor components orthe one or more metallic conductor components in response to the userinitiated external trigger signal. For example, the actuator may be inone-way or two-way communication with a transmitter, wherein thetransmitter provides the user initiated external trigger signal to areceiver of the device operationally connected to the actuator.

In some embodiments, a method of making a transient electronic devicefurther comprises providing an encapsulating material at least partiallyencapsulating the one or more of the inorganic semiconductor componentsor the one or more of the metallic conductor components. For example,the step of providing the encapsulating material at least partiallyencapsulating the one or more of the inorganic semiconductor componentsor the one or more of the metallic conductor components is carried outusing solution processing or is carried out using spin casting or spincoating.

In some embodiments, the encapsulating material comprises a selectivelyremovable material. Exemplary encapsulating materials include a materialselected from the group consisting of MgO, silk, collagen, gelatin,PLGA, polyvinylalcohol (PVA), PLA, SiO₂, polyanhydrides (polyesters),polyhydroxyalkanoates (PHAs) and polyphosphates. In an embodiment, theencapsulating material comprises silk.

In some embodiments, the device substrate comprises a selectivelyremovable material. For example, the device substrate may comprise abiocompatible, bioresorbable or ecocompatible material. In anembodiment, the device substrate comprises a polymer, or a materialselected from the group consisting of silk, collagen, gelatin, PLGA,polyvinylalcohol (PVA), PLA, MgO, SiO₂, polyanhydrides (polyesters),polyhydroxyalkanoates (PHAs) and polyphosphates. In an embodiment, thedevice substrate comprises silk.

In some embodiments, a method of making a transient electronic devicefurther comprises the step of determining the preselected transienceprofile and selecting the composition and physical dimensions of the oneor more inorganic semiconductor components or the one or more metallicconductor components to provide the preselected transience profile.

In some embodiments, a method of making a transient electronic devicefurther comprises a step of selecting a thickness or morphology of theone or more inorganic semiconductor components or the one or moremetallic conductor components to provide the preselected transienceprofile.

In some embodiments, each of the one or more inorganic semiconductorcomponents or the one or more metallic conductor componentsindependently comprise a selectively transformable material.

“Spatially arranged over the degradable substrate” as used herein,refers to a distribution of elements (e.g. device components) over thesurface area of a substrate such that each element is located at adifferent position. Inter-element spacing can be uniform or variable. Insome embodiments, the elements are spatially arranged in a regular arraypattern with equal inter-element spacing, for example in a 2D array. Insome embodiments, the elements are spatially arranged in a line (e.g., a1D array). Useful spatial arrangements include regular and irregulardistributions of elements.

In some embodiments, the geometry of transient devices may be used toprovide stretchability, flexibility, conformability and/orcompressibility. In an embodiment, the devices may exploit inorganicsemiconductor materials configured into structural shapes that cangeometrically accommodate large mechanical deformations withoutimparting significant strain in the materials themselves. For example,bridges connecting rigid device islands may be wavy, buckled, serpentineor meandering as further described in U.S. patent application Ser. No.11/851,182 (U.S. Pub. No. 2008/0157235); U.S. patent application Ser.No. 12/405,475 (U.S. Pub. No. 2010/059863); and U.S. patent applicationSer. No. 12/398,811 (U.S. Pub. No. 2010/0002402), each of which ishereby incorporated by reference.

In an embodiment, devices disclosed herein comprise one or morestretchable components, such as disclosed in U.S. patent applicationSer. No. 11/851,182 and/or U.S. patent application Ser. No. 12/405,475and/or U.S. patent application Ser. No. 12/398,811, and are made by oneor more of the processes disclosed therein. U.S. patent application Ser.Nos. 11/851,182;12/405,475; and U.S. patent application Ser. No.12/398,811, which are hereby incorporated by reference.

Without wishing to be bound by any particular theory, there may bediscussion herein of beliefs or understandings of underlying principlesrelating to the devices and methods disclosed herein. It is recognizedthat regardless of the ultimate correctness of any mechanisticexplanation or hypothesis, an embodiment of the invention cannonetheless be operative and useful.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 provides an exemplary schematic of a transient device.

FIG. 2 provides a flowchart illustrating exemplary steps for using atransient device of certain embodiments of the invention.

FIG. 3. Demonstration platform for transient electronics, with keymaterials, device structures, and reaction mechanisms. View a, Image ofa transient electronic platform that includes all essential materialsand several representative device components—transistors, diodes,inductors, capacitors and resistors, with interconnects and interlayerdielectrics, all on a thin silk substrate. View b, Exploded viewschematic illustration of this device, with a top view in the lowerright inset. All of the materials—silicon nanomembranes (Si NMs;semiconductor) and thin films of magnesium (Mg, conductor), magnesiumoxide (MgO, dielectric), silicon dioxide (SiO₂, dielectric) and silk(substrate and packaging material)—are transient, in the sense that theydisappear by hydrolysis and/or simple dissolution in water. View c,Images showing the time sequence of this type of physical transience,induced by complete immersion in water. View d, Chemical reactions foreach of the constituent materials with water. For Si and for SiO₂,reaction yields silicic acid, Si(OH)₄; Mg and MgO yield Mg(OH)₂. Silkdissolves directly, at rates that decrease with increasing beta sheetcontent (i.e. crystallinity).

FIG. 4. Experimental studies of transient electronic materials, devicesand corresponding theoretical analysis. View a, Atomic force microscope(AFM) topographical images of a single crystalline silicon nanomembrane(Si NM; initial dimensions: 3 μm×3 μm×70 nm), at various stages ofdissolution by hydrolysis in phosphate buffered saline (PBS). View b,Diagram of the processes of hydrolysis and diffusion used in theoreticalmodels of transience in silicon. Similar models apply to the othertransient materials. View c, Experimental results (symbols) andsimulations (lines) for the time dependent dissolution of Si NMs withdifferent thicknesses, 35 nm (black), 70 nm (blue), 100 nm (red) in PBSat 37° C. View d, Optical microscope images of the dissolution of aserpentine trace of Mg (150 nm thick) trace on top of a layer of MgO (10nm thick). View e, Experimental (symbols) and simulation (lines) resultsshowing the ability to tune the dissolution time of similar traces of Mg(300 nm thick) by use of encapsulation layers of different materials andthicknesses. Here, measurements of length-normalized resistance showthat the transience times increase progressively with encapsulationlayers of MgO (400 nm, red; 800 nm, blue) and silk (condition i, cyan;condition ii, purple). With these simple schemes, the transience timescan be adjusted in a range from minutes to several days or longer.Contemplated timeframes for transience are short term (minutes to days),mid term (days to weeks) and long term (weeks to months or years). Silkpackaging strategies can further extend these times. View f,Measurements of transience at the device-level with n-channeltransistors encapsulated with MgO and crystallized silk. The transienceshows dual kinetics, involving time-independent operation for severaldays, followed by rapid degradation. Transience in the encapsulationlayers and the Mg electrodes define the first and second timescales. Thematerials for the encapsulation layers and their thicknesses can, inthis way, define the transience time in a way that is decoupled fromdevice operation.

FIG. 5. Images and electrical properties of transient electroniccomponents, circuits and sensors, including simple integrated circuitsand sensor arrays. View a, Image of an LC (inductor-capacitor)oscillator fabricated with Mg electrodes and MgO dielectric layers(left) and silicon diodes with serpentine Mg resistors (right). View b,Measurements of the S21 scattering parameter of an inductor (blue),capacitor (black), and LC oscillator (red) at frequencies up to 3 GHz(left). Current-voltage (I-V) characteristics of silicon diodesconnected to three different Mg resistors (right). View c, Images of anarray of p-channel (left) metal-oxide semiconductor field effecttransistors (MOSFETs) and a logic gate (inverter; right) comprised ofn-channel MOSFETs. Each MOSFET consists of Mg source, drain, gateelectrodes, MgO gate dielectrics and Si NM semiconductors. The inverteruses Mg for interconnects, and Au for source, drain, gate electrodes, ina circuit configuration shown in the diagram. View d, I-Vcharacteristics of a representative n-channel MOSFET (left, channellength (L) and width (W) are 20 μm and 900 μm, respectively). Thethreshold voltage, mobility and on/off ratio are −0.2 V, 660 cm²/V·s,and >10⁵, respectively. Transfer characteristic for the inverter (right,L and W are 20 μm and 700 μm for input transistor and 500 μm and 40 μmfor load transistor, respectively). The voltage gain is ˜8. View e,Image of a collection of strain sensors based on Si NM resistors (left)and addressable array of Si NM photodetectors with blocking diodes. Inboth cases, Mg serves as contact and interconnection electrodes and MgOas dielectric layers. View f, Fractional change in resistance of arepresentative strain gauge as a function of time during cyclic loading(left). Bending induces tensile (red) and compressive (blue) strains,uniaxially up to ˜0.2%. Image of a logo collected with the photodetectorarray (right). Inset shows the logo design. View g, Images of logicgates in which controlled transience affects functional transformation,in this case from NOR (left) to NAND (right) operation, by selectivedissolution of an unencapsulated Mg interconnect. View h, Output voltagecharacteristics of the circuits before (NOR, left) and after (NAND,right) transformation. V_(a) and V_(b) represent voltage inputs.

FIG. 6. In vivo evaluations and example of a transient bio-resorbabledevice for thermal therapy. View a, Images of implanted (left) andsutured (right) demonstration platform for transient electronics in thesub-dermal dorsal region of a BALB-c mouse. View b, Implant site after 3weeks (left). Histological section of tissue at the implant site,excised after 3 weeks showing a partially resorbed region of the silkfilm (right). (A, subcutaneous tissue; B, silk film; C, muscle layer)View c, Resonant responses of an implanted, transient RF metamaterialstructure before and after placement in a silk package, immediatelyafter implantation, and at several time intervals thereafter. View d,Measured and calculated Q factor for the metamaterial. The resultsindicate transience dominated by diffusion of bio-fluids through thesilk package. View e, Transient wireless device for thermal therapy,consisting of two resistors (red outline) connected to a first wirelesscoil (70 MHz; outer coil) and a second resistor (blue outline) connectedto a second, independently addressable, wireless coil (140 MHz; innercoil). Inset shows thermal image of this device coupled with a primarycoil operating at two frequencies, to drive both the inner and outercoils simultaneously. View f, Primary coil next to a sutured implantsite for a transient thermal therapy device. Inset shows the image of adevice. View g, Thermal image collected while wirelessly powering thedevice through the skin; the results show a hot spot (5° C. abovebackground) at the expected location, with magnified view in the inset.

FIG. 7. Image of a bent demonstration platform for transientelectronics, on a silk substrate. The flat state appears in FIG. 3, viewa.

FIG. 8. Surface topography associated with Si NMs at various states ofdissolution in PBS, evaluated using atomic force microscopy (AFM) forthree different initial thicknesses. View a, 70 nm, view b and view c,30 nm, view d and view e, 100 nm.

FIG. 9. Time dependent change in the thicknesses of thin layers oftransient electronic materials in PBS. View a, Si NM at roomtemperature, view b, PECVD SiO₂ at room temperature, view c, PECVD SiO₂at 37° C.

FIG. 10. Change of current-voltage characteristics of a serpentine traceof Mg encapsulated with various materials during dissolution in water:view a, Experimental (symbol) and analytical results (line) for thelength-normalized resistance change of Mg trace (300 nm), as a functionof time. The inset shows the image of Mg trace, view b, Ti/Mg (5/300nm), view c, Ti/Mg/MgO (5/300/400 nm), view d, Ti/Mg/MgO (5/300/800 nm),view e, Ti/Mg/MgO/silk (i) (5/300/400 nm/50 μm), view f, Ti/Mg/MgO/silk(ii) (5/300/800 nm/50 μm)

FIG. 11. Time dependent dissolution of transient electronic materials inwater. View a, MgO (150 nm) and view b, Mg (300 nm), with a 5 nm layerof Ti as an adhesion promoter.

FIG. 12. Image and electrical characterization of transient electronicdevices designed to disintegrate, as a means to accelerate the rate oftransience. View a, Image of a 6×9 array of silicon transistors (firstframe). Each transistor uses arrays of Si nanoribbons for the activechannel regions (second frame). These nanoribbon disintegrate intoindividual pieces in the early stages of dissolution, as shown in thethird (3 min) and fourth (5 min) frames. View b, Images of a 6×8 arrayof silicon diodes fabricated with Si nanoribbons before (first andsecond frame) and after (third and fourth frame) dissolution. View c,Linear (blue) and log scale (red) transfer curves measured fromdisintegrating transistors (left), current-voltage (I-V) curves ofdisintegrating transistors (middle) and I-V characteristics ofdisintegrating diodes (right).

FIG. 13. Length-normalized change in resistance of a dissolvingserpentine trace of Mg in water, encapsulated with view a, PLGA, andview b, Collagen.

FIG. 14. View a, Comparison of Mg and Au source/drain electrodes inn-type MOSFETs, evaluated by their width-normalized resistance as afunction of channel length at gate voltages of 4V, 5V, and 6V. View b,Measured resistances of Mg and Au traces for multiple line widths, eachfor two different thicknesses, 150 nm, and 300 nm, respectively. View c,Transfer curves (left), and I-V characteristics (right) from MOSFETsthat use Mg and Au source/drain electrodes.

FIG. 15. View a, Images of transient capacitors with different sizes.The area of overlap of the two Mg electrodes is 30×100 μm (black),100×100 μm (red), 150×100 μm (blue), 200×100 μm (purple). View b,Measured capacitances using MgO (left) and SiO₂ (right) dielectrics.View c, Image of n-channel transient MOSFETs, consisting of Mg source,drain, gate electrodes, MgO gate dielectrics and Si NM active layers.View d, Linear (black) and log scale (blue) transfer curves of arepresentative MOSFETs shown in View c. View e, Linear (black) and logscale (blue) transfer curves of a p-channel transient MOSFET shown inthe left frame of FIG. 5c . The channel length (L), and width (W) are 20μm and 600 μm, respectively. The threshold voltage, mobility and on/offratio are −6 V, 100±10 cm²/V·s and ˜10⁵, respectively. View f, Image ofan interconnected 4×4 array of temperature sensors based on Si NMdiodes. View g, I-V characteristics of a temperature sensor at differenttemperatures (left). Voltages applied to a temperature sensor to yieldan output current of 10 μA, at different temperatures. Thevoltage-temperature slope from the resulting calibration curve is ˜−2.23mV/° C. (right). View h, Image of 4×4 array of temperature sensors thatuse Mg resistors, Mg interconnects, and MgO as an interlayer dielectric.View i, I-V characteristics of a representative temperature sensor shownin h (left). Measured dependence of the resistance of a Mg temperaturesensor on temperature (right). As the temperature increases, theresistance increases with the slope of ˜0.14 Ω/° C.

FIG. 16. View a, Image of solar cells that use ˜3 μm thick Si plates andMg interconnects (left). Current density and power measured from arepresentative device as a function of voltage (right). View b,Experimental (symbol) and analytical (line) results of fractional changein resistance of a silicon resistor as a function of applied tensile(red), and compressive strain (blue). View c, I-V characteristics of arepresentative pixel shown in the right frame of FIG. 5e . Dark (red)and Bright (blue) indicate the states of a light source on and off,respectively. View d, Various images obtained using the 8×8 array oftransient photodetectors, operated in a mode in which the object isscanned and a collection of recorded images is combined to improve theeffect resolution. Each inset shows the original object pattern. Asimple optics set-up containing an object, a diffusive light source, aplano-convex lens, and a separate data acquisition program were used.The distance between the lens and source image was 98 millimeters. Incertain cases, an overscanning procedure was used to remove the effectsof malfunctioning pixels.

FIG. 17. Individual pixel layouts of various sensors, view a,Temperature sensor based on Si diode (left), Mg resistor (right), Viewb, Si solar cell, view c, Si strain sensor, view d, Si photodiode.Insets show electrical schematic diagrams of each sensor.

FIG. 18. View a, Image showing an uncorrected, normalized image capturedby the transient camera. The red highlighted regions correspond tomalfunctioning pixels. Their effects could be removed by overscanning.View b, The result of this overscanning process.

FIG. 19. Images and electrical characterization of transient electroniccircuits before and after controlled transformation in function. View a,Images of transformation from a NAND gate (left) to an inverter andtransistor (right) by dissolution of a strategic Mg interconnect. Viewb, Electrical characterization of a NAND gate with V_(A) and V_(B)indicating input voltages (left) and the voltage transfercharacteristics of an inverter after transformation (right). View c,Images of transformation from a NAND gate (left) to isolated transistors(right) by dissolution of a strategic Mg interconnect. View d, Linearand log scale plots of the transfer curve (left) and current-voltagecharacteristics (right) of a resulting transistor after transformation.View e, Images of transformation from a NOR gate (left) to individualtransistors (right) by dissolution of a strategic Mg interconnect. Viewf, Output voltage characteristics of the NOR gate (left) and I-Vcharacteristic of a transistor after transformation. View g, Image of afunctional change from a Mg resistor (left) to a Si diode (right) bydissolution of the Mg resistor. View h, I-V characteristic of a Mgresistor (left) and a Si diode (right).

FIG. 20. Additional histological analysis of biocompatibility. Thisexample corresponds to a silk device, after implantation for 2 weeks.View a, and view b show composite collections of images at low and highmagnification. (A, subcutaneous tissue; B, silk film; C, muscle layer).

FIG. 21. View a, Image of wireless power coil integrated with twosilicon resistors in parallel. View b, I-V characteristics of thesilicon resistors. View c, Infrared (IR) image of heating coils poweredwirelessly through inductive coupling, with 2 resistors.

FIG. 22. Infrared image of a heater driven inductively at a frequency of68 MHz using different input powers: 0% (top-left), 18% (bottom-left),20% (top-right), and 25% (bottom-right).

FIG. 23. View a, Demonstration of a Mg resistor integrated with aninductive coil: 1-resistor (left) and 2-resistor (right). View b,Measured I-V characteristics of a Mg resistor. View c, IR images ofcoils with different number of Mg resistors: 1 resistor (left) and 2resistors (right).

FIG. 24. Layouts of transient devices used for device-level studies.View a, n-channel MOSFETs, view b, Individual n-channel MOSFET,corresponding to the dashed white box in (a), view c, Individual Sidiodes, corresponding to the dashed white box in (d), view d, Si diodes,view e, NAND gates, view f, Individual NAND gate, corresponding to thedashed white box in (e), view g, Individual Mg resistor, correspondingto the dashed white box in (h), view h, Mg resistors.

FIG. 25. Structures for device-level studies of transience. View a,Schematic illustration, showing the PDMS well and the remote probingpads, view b, Top-view picture of an array of devices under test.

FIG. 26. Studies of transience and tunability of transience at thedevice level. View a, Linear (left) and log scale (right) transfercurves measured from a transient n-channel MOSFET, corresponding to thedevice shown in FIG. 4, view f, as a function of time after immersion inwater. The data show dual kinetics in transience: negligible change inproperties for the first ˜4 days, followed by rapid decay. Thethicknesses of the MgO and silk encapsulation layers determine the firsttimescale; the thickness of the Mg electrodes defines the second. Viewb, Time dependent changes in current (left) and current-voltagecharacteristics of silicon diodes (right). The overall transientbehaviors are similar to those of the MOSFET. The inset shows an imageof an array of devices. View c, Output voltage characteristics of alogic gate (NAND) measured under similar conditions, and with inputvoltages of 0 V. The inset shows an image of an array of devices. Viewd, Measurements of length-normalized resistance and fractional changesof resistance in Mg traces as functions of time. The inset shows anarray of resistors.

FIG. 27. In vitro tests of bacterial inhibition provided by a transient,wireless thermal therapy device. View a, Images of three differenttransient devices, each beneath agar and with a primary coil forwireless power delivery—an isolated, serpentine Mg resistor (left), anisolated Mg RF inductive coil (middle), an interconnected resistor andcoil (coil+resistor, right). View b, Magnified view of a resistor(left), a coil (middle) and a heater (right). View c, Infrared images ofagar plate with devices inductively powered at a frequency of 80 MHz.The resistor (left) and coil (middle) show negligible heating, asexpected. The integrated device (right) shows a peak temperature of ˜50°C. at the location of the resistor. View d, Images of bacteria afterincubation. The results show no bacteria clearance for the cases of theresistor (left) and coil (middle). The integrated device indicatesbacteria clearance at a region corresponding to the resistor and hottestcore zone (right).

FIG. 28. Schematic illustration for the theoretical models used tocapture the kinetics of dissolution, view a, Single layer, and view b,Double layer.

FIG. 29. AFM images and line profiles collected at various stages ofdissolution of different thicknesses of SiO₂ films deposited by plasmaenhanced chemical vapor deposition (PECVD): View a and view b, 35 nm,view c and view d, 70 nm, view e and view f, 100 nm.

FIG. 30. Experimental results (symbols) and theoretical predictions(lines) for the time dependent dissolution of Si NMs with differentthicknesses, 35 nm (black), 70 nm (blue), 100 nm (red) in PBS at 37° C.The calculations presented here use time dependent reaction rateconstants.

FIG. 31. Views (a)-(f) Scanning electron micrographs of a ZnO nanorod,collected at various times during water dissolution.

FIG. 32. Atomic force micrographs of selective, thermocapillary flows ina thin film of a molecular glass (MG2OH) on an array of carbonnanotubes. Selective Joule heating in the metallic tubes inducesthermocapillary flows in the overlying glass, at low temperatures withgradients of a few degrees per micron.

FIG. 33. A schematic diagram of the thermocapillary model for triggeredtransience.

FIG. 34. (left-to-right) Absorption spectra in Au-NP silk solutions andimages of bulk samples for different AuNP concentrations. Thermal imageof a AuNP-silk film (2 □m thick) spin-cast on a glass slide whenilluminated by a green (532 nm) laser pointer and corresponding measuredthermal profile (data acquired with a FLIR SC-600 thermal imager).

FIG. 35. Microneedles in silk and inset showing micropockets molded intothe needles to load additional drug doses.

FIG. 36. Example of printed silk doped with enzymes (HRP). The exposureto TMB causes the peroxidase to undergo a colorimetric reaction andreveal the printed pattern.

FIG. 37. In vitro degradation of tungsten embolization coils.

FIG. 38. Serum tungsten levels in rabbits with implanted embolizationcoils.

FIG. 39. Views (a)-(d) Hydrogen evolution (as a measure of degradation)during degradation of various binary magnesium alloys.

FIG. 40. Comparison of corrosion rates for Mg and Zn alloys at differentpH.

FIG. 41. Degradation rate and solution iron concentration during invitro degradation tests of iron (Fe).

FIG. 42. Accumulation of iron in the electrolyte in relation to time.

FIG. 43. Chemical structures, device geometry, and degradation test ofPVA and PLGA.

FIG. 44. Schematic illustration of microtransfer printing of siliconmembranes derived from a wafer source (left) and picture of arepresentative custom, automated tool for this purpose (right). Thetable in the lower right provides performance specifications.

FIG. 45. Array of semiconductor nanomembranes assembled by □TP into asparse array on a plastic substrate (left) and free-standing 8″×11″sheet of silk (right).

FIG. 46. Schematic illustrations of the pulling direction dependentadhesion of an angled stamp on a substrate, view (a), and itsimplementation to □TP for high speed operation, in a roller printingmode in retrieve mode, view (b), and print mode (c). Simultaneousretrieving on one side and printing on the other is possible.

FIG. 47. Process flow for converting foundry-sourced Si CMOS intocomponent building blocks for resorbable electronics.

FIG. 48. Example of Si CMOS (non-resorbable) prepared for □TP.

FIG. 49. Schematic illustration of key components (left), solid formrepresentation (middle) and actual image (right) of a custom-built highresolution e-jet printing system.

FIG. 50. Representative patterns printed by e-jet, showing capabilitiesfor forming circuit-like arrangements of conductive lines (left) andsub-micron resolution (right).

FIG. 51. Schematic illustration (left) and electrostatics modeling(right) of an e-jet printing nozzle with an integrated, concentric ringcounterelectrode. This arrangement has the potential to eliminateeffects of the substrate on the printing process. (SU8 is aphotopatternable epoxy.)

FIG. 52. Schematic illustration of a complete manufacturing flow forresorbable electronics, involving embossed relief features forregistration, □TP for delivery of modified foundry-based devices, withe-jet for fine contact and interconnects, and ink jet for coarsefeatures. Components for sensing (optical) and inspection (electricaltest structures) provide routes for feedback on the processes.

FIG. 53. Demonstration of transient antenna remotely powering an LED.

FIG. 54. Schematic of transient RF power scavenger.

FIG. 55. Schematic illustration and performance data for Si rectifiers(PIN diodes).

FIG. 56. Example of a full wave rectifier.

FIG. 57. Example of a fully transient RF scavenging system.

FIGS. 58A-58B. Mg inductors, FIG. 58a , and their correspondingperformance data, FIG. 58 b.

FIGS. 59A-59E. Mg capacitors, FIG. 59a , and their performance data,FIG. 59b -59 e.

FIGS. 60A-60D. Examples FIG. 60a and schematics, FIGS. 60b-60c , ofColpitts oscillators with passive transient components, and, FIG. 60d ,harmonics graph showing oscillation from Colpitt circuit.

FIG. 61. Design for a fully transient radio including a Si CMOS ringoscillator.

FIG. 62. Example of patterning Mg by e-jet printing.

FIG. 63. Transient electronics. The substrate and the passives are watersoluble; the active devices use a disintegrating design. View a) Imageof the device after integrating the actives (left) and forming thepassives and interconnects (right). View b) Sequence of images showingthe system dissolving in water.

FIG. 64. Radio demonstration vehicle. Circuit diagram for a radio devicethat consists of a scavenging rectifier (left) and a transmittingoscillator (right). The bottom frames show pictures of physicalrealization of this circuit in a ‘plastic RF’ technology.

FIG. 65. Active and passive ‘plastic RF’ components. Clockwise from topleft: small signal gain in a GaAs MESFET, scattering parameters for anLC oscillator, and frequency responses in capacitors, and inductors. Alldevices have sub-micron thicknesses, and are built on thin sheets ofpolyimide.

FIG. 66. Bio-resorbable electronics built with Si MOSFETs on thin, silksubstrates. View a) Water dissolution of a piece of silicon-on-silkelectronics. View b) In vivo evaluation of a similar device implantedunder the skin.

FIG. 67. In-vivo electrocorticography (ECoG) with an ultrathin, meshelectrode array on a resorbable silk substrate. Left: picture of thedevice, conformally wrapped onto the surface of the brain, afterdissolution of the silk. Right: ECoG from the visual cortex of a cat.The intimate electrode/tissue contact provides unmatched measurementfidelity.

FIG. 68. Water-soluble ECoG device built using magnesium electrodespatterned on a film of silk. The sequence of images, from left to right,illustrates dissolution of the system by water.

FIG. 69. Enzymatic degradation of silk films by protease XIV understandard reaction conditions at 37° C. The temperatures on the rightside of the Figure indicate the temperatures used to anneal the films tocontrol crystalline content [4° C., 25° C., 37° C., 70° C., 95° C.].

FIG. 70. Radio demonstration vehicle. Circuit diagram for a radio devicethat consists of a scavenging rectifier (left) and a transmittingoscillator (right). The bottom frames show pictures of physicalrealization of this circuit in a ‘plastic RF’ technology.

FIG. 71. Scavenging Rectifier. The top frame shows the single stagerectifier circuit diagram and voltage of nodes during half-cycle of ACinput. The bottom frames show the two stage rectifier with voltagesimulation results at each stage output nodes, indicating the change ofvoltage from AC to DC.

FIG. 72. Transmitter. The top frame shows the procedure for designingmicrowave oscillators using a simplified model for the active device.Bottom frames show simplified black box schematics of the oscillator(left), and final circuitry of the radio frequency signal transmitter(right).

FIG. 73. Active and passive ‘plastic RF’ components. Clockwise from topleft: small signal gain in a GaAs MESFET, scattering parameters for anLC oscillator, and frequency responses in capacitors, and inductors. Alldevices have submicron thicknesses, and are built on thin sheets ofpolyimide.

FIG. 74. Radio demonstration vehicle. Circuit diagram for a radio devicethat consists of a scavenging rectifier (left) and a transmittingoscillator (right). The bottom frames show the simulation result oftransmitter where the transmitting frequency is at 1 GHz.

FIG. 75. Resistance/Length. Comparison of resistance/length (R/L)measured from Mg and Au test structure electrodes with different filmthicknesses and widths, on glass substrate.

FIG. 76. Mg based transistors. View (a) Width-normalized ON resistanceas a function of channel length at different gate voltages. View (b)Transfer curves and Current-Voltage curves of transistor.

FIG. 77. Rates for Mg dissolution in Water. Mg fully dissolves in waterafter 3 hrs (1500Å), and 10 hrs (3000 Å). Only Ti remains.

FIG. 78. Rapid dissolution of a film of amorphous silk. 0 sec (left), 10sec (right).

FIG. 79. Circuit diagram for a digital 4 bit row decoder.

FIG. 80. Image of a ‘disappearing’ wax that vanishes by sublimation atroom temperature. Thin films and sheets of this material serve asplatforms for electronics that offer a completely dry form oftransience.

FIG. 81. Mode of use for a transient RF beacon device.

FIG. 82. Schematic diagram of a transient RF beacon.

FIG. 83. Schematic diagrams of ZnO thin film transistor and capacitorarrays and components.

FIG. 84. Schematic diagrams of ZnO thin film transistor and capacitorarrays and components.

FIGS. 85A-85D. Plots and micrographs showing ZnO film properties. FIG.85A, Powder X-ray diffraction plot and crystal structure of ZnO, FIG.85B, Voltage versus displacement curves for ZnO films, FIG. 85C,Electron micrograph of ZnO film, FIG. 85D, Time versus bias curve forZnO film.

FIG. 86. Views (a)-(c) Current versus voltage plots for ZnO transistors.On/off ratio >˜10³, V_(th) (threshold voltage) ˜2V, Mobility ˜1 cm²/V·s.

FIG. 87. View (a) Time versus voltage and view (b) time versus currentplots for ZnO energy harvesters under stress and strain as shownschematically in view (c). P=I×V=6 nW, Power density=0.15 μW/cm², StrainRate=1.5 cm/sec.

FIG. 88. Photographic time lapse of ZnO transistor arrays and energyharvester arrays on silk substrates dissolving in water.

FIG. 89. Plots showing performance of view (a) a ZnO transistor duringtransience. Performance is measured as view (b) mobility over time andview (c) current versus voltage.

FIG. 90. Model of current from a ZnO energy harvester with Mg contactson a silk substrate.

FIG. 91. Model of voltage from a ZnO energy harvester with Mg contactson a silk substrate.

FIG. 92. Schematic diagram of view (a) the electrochemical measurementset up and view (b) a plot of current versus voltage for Fe, Al and Cu.

FIG. 93. Schematic diagram of a circuit demonstration wherein anodicdissolution of a first current path via electrochemistry triggerscurrent to travel a secondary current path that lights an LED.

FIG. 94. Photographs of the device described schematically in FIG. 93before view (a) and after view (b) anodic dissolution.

FIG. 95. Schematic diagram of a transient RF beacon.

FIGS. 96A-96D. Schematic diagram of a transient dual-sided printedcircuit board showing FIG. 96A, the front side, FIG. 96B, the back side,and FIG. 96C-96D, the alignment of the front side and the back side.

FIGS. 97A-97B. FIG. 97A, [Schematic diagram of a dual-sided solarpowered RF beacon and FIG. 97B, photographs of the dual-sided solarpowered RF beacon.

FIG. 98. Photograph of the solar powered RF beacon attached to a Mgantenna that communicates with an antenna of a signal analyzer.

FIG. 99. View (a) A solar cell having a thickness of about 3 μm and view(b) a plot for the solar cell showing current and power versus voltage.For comparison, view (c) shows a plot of current versus voltage for the˜15 μm thick solar cell used in the beacon of FIG. 98.

FIG. 100. Omnidirectional Mg coil antenna having a central frequency at160 MHz.

FIG. 101. Graphs of beacon signal output when the device is powered byview (a) a DC power supply at high power and view (b) a transient solarcell at lower power.

FIG. 102. Graphs showing the signal received by the receiver from thebeacon view (a) at a distance of 5 meters when powered by a DC powersupply and view (b) at a distance of 10 cm when powered by a transientsolar cell.

FIG. 103. Photograph of a transient RF beacon transmitter on a silksubstrate using commercial solar cells.

FIG. 104. Photograph of an electrospinning apparatus for generatingsublimable materials for use in transient devices.

FIGS. 105A-105B. Photographs of FIG. 105A left: dry electrospun PVA matand right: hydrated electrospun PVA mat and FIG. 105B left: cotton gauzeand right: electrospun bovine fibrinogen mat.

FIGS. 106A-106B. Plot s showing the approximate time for electricalopens to appear in metal lines for FIG. 106A various metals deposited ata thickness of 300 nm and FIG. 106B for Fe having thicknesses of 150 nmand 300 nm.

FIGS. 107A-107C. Schematic diagram of dissolution mechanisms FIG. 107Ainvolving disintegration/flaking of metal chunks into water and FIG.107B involving dissolution rather than disintegration/flaking. FIG. 107Cshows that the metal gets thinner and more porous upon dissolution.

FIG. 108. Plots of theoretical and experimental results showing metaldissolution over time in accordance with FIG. 107B.

FIG. 109. Photographs showing view (a) initial dissolution of tungstentraces followed by view (b) disintegration/flaking of tungsten traces atlater times, as well as examples of tungsten delamination (view (c)),tungsten delamination and cracking (view (d)), and tungsten flaking inPBS solution (view (e)).

FIG. 110. Photographs of 100 nm W films before dissolution in DI waterview (a) and after 20 hours of dissolution view (b). View (c) shows thedissolution behavior of a 100 nm W film of different widths.

FIG. 111. Micrographs of an AZ31B film before dissolution view (a) andafter 2 hours of dissolution in DI water view (b). View (c) shows thedissolution behavior of 300 nm AZ31B Mg alloy in DI water and PBSsolution.

FIG. 112. Micrographs of a Zn film before dissolution view (a) and after2 hours of dissolution in DI water view (b). View (c) shows thedissolution behavior of 300 nm Zn in DI water and PBS solution.

FIG. 113. Micrographs of an Fe film with coarse/dense grains view (a)that corrode faster than the finer grains of view (b). View (c) showsthe dissolution behavior of 150 nm Fe in DI water and PBS solution.

FIGS. 114A-114D. Plots summarizing metal dissolution data in DI water(pH 6.8) and in phosphate buffer solution (pH 7.4).

FIG. 115. Plot of the dissolution properties of Si in PBS.

FIGS. 116A-116B. FIG. 116A, Photograph and FIG. 116B, infrared image ofa transient thermal therapy device having a Mg inductor coil and a Mgresistor on a silk substrate.

FIG. 117. Photograph of in vitro evaluations of bacterial cultures. (H)no implant, no injection of healthy tissue, (D) device implanted, (B1and B2) bacteria injected.

FIG. 118. Views (a)-(c) Schematic diagram of fully formed transientMOSFETS and integrated circuits.

FIG. 119. Photographs showing a time lapse of the dissolution of fullyformed transient MOSFETS and integrated circuits.

FIG. 120. Views (a)-(i) Photographs and performance plots of fullyformed transient MOSFETS and integrated circuits.

FIG. 121. Photographs and performance plots of transient RF electronics:Views (a-b) rectifiers, views (c-d) capacitors, views (e-f) inductors,and views (g-h) resistors.

FIG. 122. Views (a)-(e) Photographs and performance plots of transientRF electronics: 3-stage cMOS ring oscillators.

FIG. 123. Photographs of Fe electrode cMOS oscillators.

FIG. 124. Photographs, schematics and plots relating to Fe electrodecMOS logic circuits (NAND, NOR).

FIG. 125. Photographs of logic circuit transformation (logic circuits tocMOS inverter).

FIG. 126. Plots showing the performance of Mg alloy (AZ31B, Al 3%, ZN1%) TFTs.

FIG. 127. Views (a)-(c) Photographs, performance plots, and time lapsedissolution studies of transient RF electronics having antennas.

FIG. 128. Views (a)-(f) Schematics, photographs, and time lapsedissolution studies of a transient RF device incorporating componentsfrom FIGS. 115-117.

FIGS. 129A-129C. Schematic of the electrochemical transient powersupply, FIG. 129A, and performance plots showing voltage and dischargecurrent over time for the metal couples, FIGS. 129B-129C.

FIGS. 130A-130B. Time lapse schematic diagrams of a transient devicefalling toward ground and releasing a transforming liquid upon impactwith the ground.

FIG. 131. Schematic of a transient device having an antenna forreceiving a signal from a remote transmitter.

DETAILED DESCRIPTION

In general, the terms and phrases used herein have their art-recognizedmeaning, which can be found by reference to standard texts, journalreferences and contexts known to those skilled in the art. The followingdefinitions are provided to clarify their specific use in the context ofthe invention.

“Functional layer” refers to a layer that imparts some functionality tothe device. For example, the functional layer may contain semiconductorcomponents, metallic components, dielectric components, opticalcomponents, piezoelectric components, etc. Alternatively, the functionallayer may comprise multiple layers, such as multiple semiconductorlayers, metallic layers or dielectric layers separated by supportlayers. The functional layer may comprise a plurality of patternedelements, such as interconnects running between electrodes or islands.The functional layer may be heterogeneous or may have one or moreproperties that are inhomogeneous. “Inhomogeneous property” refers to aphysical parameter that can spatially vary, thereby effecting theposition of the neutral mechanical plane within a multilayer device.

“Structural layer” refers to a layer that imparts structuralfunctionality, for example by supporting, securing and/or encapsulatingdevice components. The invention includes transient devices having oneor more structural layers, such as encapsulating layers, embeddinglayers, adhesive layers and/or substrate layers.

“Semiconductor” refers to any material that is an insulator at a verylow temperature, but which has an appreciable electrical conductivity ata temperature of about 300 Kelvin. In the present description, use ofthe term semiconductor is intended to be consistent with use of thisterm in the art of microelectronics and electronic devices. Usefulsemiconductors include those comprising elemental semiconductors, suchas silicon, germanium and diamond, and compound semiconductors, such asgroup IV compound semiconductors such as SiC and SiGe, group III-Vsemiconductors such as AlSb, AlAs, AlN, AlP, BN, BP, BAs, GaSb, GaAs,GaN, GaP, InSb, InAs, InN, and InP, group III-V ternary semiconductorsalloys such as Al_(x)Ga_(1-x)As, group II-VI semiconductors such asCsSe, CdS, CdTe, ZnO, ZnSe, ZnS, and ZnTe, group 1-VII semiconductorssuch as CuCl, group IV-VI semiconductors such as PbS, PbTe, and SnS,layer semiconductors such as Pbl₂, MoS₂, and GaSe, oxide semiconductorssuch as CuO and Cu₂O. The term semiconductor includes intrinsicsemiconductors and extrinsic semiconductors that are doped with one ormore selected materials, including semiconductors having p-type dopingmaterials and n-type doping materials, to provide beneficial electronicproperties useful for a given application or device. The termsemiconductor includes composite materials comprising a mixture ofsemiconductors and/or dopants. Specific semiconductor materials usefulfor some embodiments include, but are not limited to, Si, Ge, Se,diamond, fullerenes, SiC, SiGe, SiO, SiO₂, SiN, AlSb, AlAs, AlIn, AlN,AlP, AlS, BN, BP, BA_(S), As₂S₃, GaSb, GaAs, GaN, GaP, GaSe, InSb, InAs,InN, InP, CsSe, CdS, CdSe, CdTe, Cd₃P₂, Cd₃As₂, Cd₃Sb₂, ZnO, ZnSe, ZnS,ZnTe, Zn₃P₂, Zn₃As₂, Zn₃Sb₂, ZnSiP₂, CuCl, PbS, PbSe, PbTe, FeO, FeS₂,NiO, EuO, EuS, PtSi, TlBr, CrBr₃, SnS, SnTe, Pbl₂, MoS₂, GaSe, CuO,Cu₂O, HgS, HgSe, HgTe, Hgl₂, MgS, MgSe, MgTe, CaS, CaSe, SrS, SrTe, BaS,BaSe, BaTe, SnO₂, TiO, TiO₂, Bi₂S₃, Bi₂O₃, Bi₂Te₃, BiI_(a), UO₂, UO₃,AgGaS₂, PbMnTe, BaTiO₃, SrTiO₃, LiNbO₃, La₂CuO₄, La_(0.7)Ca_(0.3)MnO₃,CdZnTe, CdMnTe, CuInSe₂, copper indium gallium selenide (CIGS), HgCdTe,HgZnTe, HgZnSe, PbSnTe, Tl₂SnTe₅, Tl₂GeTe₅, AlGaAs, AlGaN, AlGaP,AlInAs, AlInSb, AlInP, AlInAsP, AlGaAsN, GaAsP, GaAsN, GaMnAs, GaAsSbN,GaInAs, GaInP, AlGaAsSb, AlGaAsP, AlGaInP, GaInAsP, InGaAs, InGaP,InGaN, InAsSb, InGaSb, InMnAs, InGaAsP, InGaAsN, InAlAsN, GaInNAsSb,GaInAsSbP, and any combination of these. Porous silicon semiconductormaterials are useful for aspects described herein. Impurities ofsemiconductor materials are atoms, elements, ions and/or molecules otherthan the semiconductor material(s) themselves or any dopants provided tothe semiconductor material. Impurities are undesirable materials presentin semiconductor materials which may negatively impact the electronicproperties of semiconductor materials, and include but are not limitedto oxygen, carbon, and metals including heavy metals. Heavy metalimpurities include, but are not limited to, the group of elementsbetween copper and lead on the periodic table, calcium, sodium, and allions, compounds and/or complexes thereof.

A “semiconductor component” broadly refers to any semiconductormaterial, composition or structure, and expressly includes high qualitysingle crystalline and polycrystalline semiconductors, semiconductormaterials fabricated via high temperature processing, dopedsemiconductor materials, inorganic semiconductors, and compositesemiconductor materials.

A “component” is used broadly to refer to an individual part of adevice. An “interconnect” is one example of a component, and refers toan electrically conducting structure capable of establishing anelectrical connection with another component or between components. Inparticular, an interconnect may establish electrical contact betweencomponents that are separate. Depending on the desired devicespecifications, operation, and application, an interconnect is made froma suitable material. Suitable conductive materials includesemiconductors and metallic conductors.

Other components include, but are not limited to, thin film transistors(TFTs), transistors, diodes, electrodes, integrated circuits, circuitelements, control elements, photovoltaic elements, photovoltaic elements(e.g. solar cell), sensors, light emitting elements, actuators,piezoelectric elements, receivers, transmitters, microprocessors,transducers, islands, bridges and combinations thereof. Components maybe connected to one or more contact pads as known in the art, such as bymetal evaporation, wire bonding, and application of solids or conductivepastes, for example. Electronic devices of the invention may compriseone or more components, optionally provided in an interconnectedconfiguration.

“Neutral mechanical plane” (NMP) refers to an imaginary plane existingin the lateral, b, and longitudinal, l, directions of a device. The NMPis less susceptible to bending stress than other planes of the devicethat lie at more extreme positions along the vertical, h, axis of thedevice and/or within more bendable layers of the device. Thus, theposition of the NMP is determined by both the thickness of the deviceand the materials forming the layer(s) of the device. In an embodiment,a device of the invention includes one or more inorganic semiconductorcomponents, one or more metallic conductor components or one or moreinorganic semiconductor components and one or more metallic conductorcomponents provided coincident with, or proximate to, the neutralmechanical plane of the device.

“Coincident” refers to the relative position of two or more objects,planes or surfaces, for example a surface such as a neutral mechanicalplane that is positioned within or is adjacent to a layer, such as afunctional layer, substrate layer, or other layer. In an embodiment, aneutral mechanical plane is positioned to correspond to the moststrain-sensitive layer or material within the layer.

“Proximate” refers to the relative position of two or more objects,planes or surfaces, for example a neutral mechanical plane that closelyfollows the position of a layer, such as a functional layer, substratelayer, or other layer while still providing desired conformabilitywithout an adverse impact on the strain-sensitive material physicalproperties. “Strain-sensitive” refers to a material that fractures or isotherwise impaired in response to a relatively low level of strain. Ingeneral, a layer having a high strain sensitivity, and consequentlybeing prone to being the first layer to fracture, is located in thefunctional layer, such as a functional layer containing a relativelybrittle semiconductor or other strain-sensitive device element. Aneutral mechanical plane that is proximate to a layer need not beconstrained within that layer, but may be positioned proximate orsufficiently near to provide a functional benefit of reducing the strainon the strain-sensitive device element when the device is conformed to atissue surface. In some embodiments, proximate to refers to a positionof a first element within 100 microns of a second element, or optionallywithin 10 microns for some embodiments, or optionally within 1 micronsfor some embodiments.

“Electronic device” generally refers to a device incorporating aplurality of components, and includes large area electronics, printedwire boards, integrated circuits, component arrays, biological and/orchemical sensors, physical sensors (e.g., temperature, strain, etc.),nanoelectromechanical systems, microelectromechanical systems,photovoltaic devices, communication systems, medical devices, opticaldevices and electro-optic devices.

“Sensing” refers to detecting the presence, absence, amount, magnitudeor intensity of a physical and/or chemical property. Useful electronicdevice components for sensing include, but are not limited to electrodeelements, chemical or biological sensor elements, pH sensors,temperature sensors, strain sensors, mechanical sensors, positionsensors, optical sensors and capacitive sensors.

“Actuating” refers to stimulating, controlling, or otherwise affectingan structure, material or device component, such as one or moreinorganic semiconductor components, one or more metallic conductorcomponents or an encapsulating material or layer. In an embodiment,actuating refers to a process in which a structure or materials isselectively transformed, for example, so as to undergo a chemical orphysical change such as removal, loss or displacement of a material orstructure. Useful electronic device components for actuating include,but are not limited to, electrode elements, electromagnetic radiationemitting elements, light emitting diodes, lasers, magnetic elements,acoustic elements, piezoelectric elements, chemical elements, biologicalelements, and heating elements.

An “actuator” is a device component that directly or indirectlyinitiates at least partial transformation of a transient electronicdevice in response to a user initiated external trigger signal, forexample by initiating an at least partial transformation of aselectively transformable material of a transient electronic device. Forexample, an actuator may initiate at least partial transformation of atransient device by absorbing energy supplied to the device andutilizing or converting that energy to affect the at least partialtransformation. For example, an actuator may initiate at least partialtransformation of a transient device by exposing a device componentcomprising selectively transformable material to an internal or externalstimulus resulting an at least partial transformation. For example, anactuator may initiate at least partial transformation of a transientdevice by supplying energy (e.g., thermal, electromagnetic radiation,acoustic, RF energy, etc.) to an intermediate material or devicecomponent which affects the transformation, such as supplying energy toan encapsulating material, inorganic semiconductor components, ormetallic conductor components. Thus, the actuator may comprise a singlecomponent or multiple components that alone or in combination facilitatetransformation of the transient electronic device. In some embodiments,an actuator of the invention is directly or indirectly provided in oneway to two communication with a transmitter, for example, via one ormore receiver device components.

A “user initiated trigger signal” includes any action, other than themere placement of a transient device in a particular environment, bywhich a person may start or initiate a programmable transformation of atransient device. Exemplary “user initiated trigger signals” includeproviding real-time user input data to the device or a transmitter incommunication with the device (e.g., pressing a button, flipping aswitch, setting a timer, etc.), providing at least one non-ambientexternal source of energy directly or indirectly to the device (e.g., anelectric field, a magnetic field, acoustic energy, pressure, strain,heat, light, mechanical energy, etc.), and/or programming software toexecute computer-readable instructions, which may be based on datareceived from the device, for example data from a feedback loop. In anembodiment, the user initiated external trigger signal is an electronicsignal, an optical signal, a thermal signal, a magnetic signal, amechanical signal, a chemical signal, acoustic signal or anelectrochemical signal. In an embodiment, the invention provides atransient electronic device configured to receive a user initiatedtrigger signal, for example, a user initiated trigger signal provided bya transmitter and received by a receiver component of the device.

A “non-ambient external source of energy” includes energy having amagnitude at least 10% greater, or at least 25% greater, or at least 50%greater than the magnitude of ubiquitous energy of the same form foundin the environment in which a transient device is located.

The terms “directly and indirectly” describe the actions or physicalpositions of one component relative to another component. For example, acomponent that “directly” acts upon or touches another component does sowithout intervention from an intermediary. Contrarily, a component that“indirectly” acts upon or touches another component does so through anintermediary (e.g., a third component).

“Island” refers to a relatively rigid component of an electronic devicecomprising a plurality of semiconductor components. “Bridge” refers tostructures interconnecting two or more islands or one island to anothercomponent. Specific bridge structures include semiconductor and metallicinterconnects. In an embodiment, a transient device of the inventioncomprises one or more semiconductor-containing island structures, suchas transistors, electrical circuits or integrated circuits, electricallyconnected via one or more bridge structures comprising electricalinterconnects.

“Encapsulate” refers to the orientation of one structure such that it isat least partially, and in some cases completely, surrounded by one ormore other structures, such as a substrate, adhesive layer orencapsulating layer. “Partially encapsulated” refers to the orientationof one structure such that it is partially surrounded by one or moreother structures, for example, wherein 30%, or optionally 50% oroptionally 90%, of the external surfaces of the structure is surroundedby one or more structures. “Completely encapsulated” refers to theorientation of one structure such that it is completely surrounded byone or more other structures. The invention includes transient deviceshaving partially or completely encapsulated inorganic semiconductorcomponents, metallic conductor components and/or dielectric components,for example, via incorporation a polymer encapsulant, such asbiopolymer, silk, a silk composite, or an elastomer encapsulant.

“Barrier layer” refers to a component spatially separating two or moreother components or spatially separating a component from a structure,material, fluid or environment external to the device. In oneembodiment, a barrier layer encapsulates one or more components. In someembodiments, a barrier layer separates one or more components from anaqueous solution, a biological tissue or both. The invention includesdevice having one or more barrier layers, for example, one or morebarrier layers positioned at the interface of the device with anexternal environment.

A barrier layer(s), and optionally a sacrificial layer on a substrate,may be etched to produce a “mesh structure”, where at least a portion ofthe barrier layer(s), and optionally the sacrificial layer on asubstrate, is removed. For example a portion of the barrier layer(s)disposed approximately 10 nanometers or more from an inorganicsemiconductor component or additional component is removed. Removal ofat least a portion of the barrier layer(s), and optionally thesacrificial layer on the substrate, may produce (i) one or more holeswithin the barrier layer(s) and/or (ii) electrical components, which arephysically joined by a barrier layer(s) at a proximal end and physicallyseparated at a distal end. In one embodiment, a mesh structure may bedisposed upon a contiguous substrate, which provides structural supportfor the device during deployment into an environment.

“Contiguous” refers to materials or layers that are touching orconnected throughout in an unbroken sequence. In one embodiment, acontiguous layer of an implantable biomedical device has not been etchedto remove a substantial portion (e.g., 10% or more) of the originallyprovided material or layer.

“Active circuit” and “active circuitry” refer to one or more componentsconfigured for performing a specific function. Useful active circuitsinclude, but are not limited to, amplifier circuits, multiplexingcircuits, current limiting circuits, integrated circuits, transistorsand transistor arrays. The present invention includes devices whereinthe one or more inorganic semiconductor components, one or more metallicconductor components and/or one or more dielectric components comprisean active circuit or plurality of active circuits.

“Substrate” refers to a material, layer or other structure having asurface, such as a receiving surface, that is capable of supporting oneor more components or devices. A component that is “bonded” to thesubstrate refers to a component that is in physical contact with thesubstrate and unable to substantially move relative to the substratesurface to which it is bonded. Unbounded components or portions of acomponent, in contrast, are capable of substantial movement relative tothe substrate. In an embodiment, the invention provides devices whereinone or more inorganic semiconductor components, one or more metallicconductor components and/or one or more dielectric components aredirectly or indirectly bonded to the substrate, for example, via an“Substrate” refers to a material, layer or other structure having asurface, such as a receiving surface, that is capable of supporting oneor more components or devices. A component that is “bonded” to thesubstrate refers to a component that is in physical contact with thesubstrate and unable to substantially move relative to the substratesurface to which it is bonded. Unbounded components or portions of acomponent, in contrast, are capable of substantial movement relative tothe substrate. In an embodiment, the invention provides devices whereinone or more inorganic semiconductor components, one or more metallicconductor components and/or one or more dielectric components aredirectly or indirectly bonded to the substrate, for example, via anadhesive layer or via an adhesion layer.

A “selectively transformable material” is a material that undergoes aphysical change and/or a chemical change under pre-selected and/orpredetermined conditions, such as conditions of time, pressure,temperature, chemical or biological composition, and/or electromagneticradiation. Selectively transformable materials useful for some deviceapplications undergo a physical transformation, such as a phase changeincluding melting, sublimation, etc., optionally at a preselected timeor at a preselected rate or in response to a preselected set ofconditions or change in conditions. Selectively transformable materialsuseful for some device applications undergo a chemical transformation,such as decomposition, disintegration, dissolution, hydrolysis,resorption, bioresporption, photodecomposition, depolymerization,etching, or corrosion, optionally at a preselected time or at apreselected rate or in response to a preselected set of conditions orchange in conditions. The pre-selected condition(s) may occur naturally,for example, provided by conditions of a device environment (e.g.,ambient temperature, pressure, chemical or biological environment,natural electromagnetic radiation, etc.) or may occur via artificialcondition(s) provided to, or within, a transient electronic device, suchas a user or device initiated temperature, pressure, chemical orbiological environment, electromagnetic radiation, magnetic conditions,mechanical strain, or electronic conditions. When the selectivelytransformable material of a transient electronic device is exposed tothe condition(s) that initiate transformation of the material, theselectively transformable material may be substantially completely orcompletely transformed at a “pre-selected time” or a “pre-selectedrate”. Devices of the invention include selectively transformablematerials that undergo a complete transformation, substantially completetransformation or an incomplete transformation. A selectivelytransformable material that is “substantially completely” transformed is95% transformed, or 98% transformed, or 99% transformed, or 99.9%transformed, or 99.99% transformed, but not completely (i.e., 100%)transformed. In some embodiments, a selectively transformable materialundergoes a chemical change resulting in a change in a physical,chemical, electronic or optoelectronic property, optionally at apre-selected time or at a pre-selected rate. In an embodiment, forexample, a selectively transformable material undergoes a chemical orphysical change resulting in a change of a first compositioncharacterized by a conducting or semiconducting material to a secondcomposition characterized as an insulator. In some embodiments, aselectively transformable material is a selectively removable material.

A “selectively removable material” is a material that is physicallyand/or chemically removed under pre-selected or predetermined conditionssuch as conditions of time, pressure, temperature, chemical orbiological composition, and/or electromagnetic radiation. In anembodiment, for example, a selectively removable material is removed viaa processes selected from the group consisting of decomposition,disintegration, dissolution, hydrolysis, resorption, bioresporption,photodecomposition, and depolymerization, optionally at a preselectedtime or at a preselected rate or in response to a preselected set ofconditions or change in conditions. In an embodiment, for example, aselectively removable material is removed by undergoing a phase change,such as melting or sublimation, resulting in loss or relocation of thematerial, optionally at a preselected time or at a preselected rate orin response to a preselected set of conditions or change in conditions.The pre-selected condition(s) may occur naturally, for example, providedby conditions of a device environment (e.g., ambient temperature,pressure, chemical or biological environment, natural electromagneticradiation, etc.) or may occur via artificial condition(s) provided to,or within, a transient electronic device, such as a user or deviceinitiated temperature, pressure, chemical or biological environment,electromagnetic radiation, electronic conditions. When the selectivelyremovable material of a transient electronic device is exposed to thecondition(s) that initiate removal of the material, the selectivelyremovable material may be substantially completely, completely removedor incompletely removed at a “pre-selected time” or a “pre-selectedrate”. A selectively removable material that is “substantiallycompletely” removed is 95% removed, or 98% removed, or 99% removed, or99.9% removed, or 99.99% removed, but not completely (i.e., 100%)removed.

A “pre-selected time” refers to an elapsed time from an initial time,t₀. For example, a pre-selected time may refer to an elapsed time from acomponent/device fabrication or deployment, to a critical time, t_(c),for example, when the thickness of a selectively removable materialexposed to a pre-selected condition(s) reaches zero, or substantiallyzero (10% or less of initial thickness, 5% or less of initial thickness,1% or less of initial thickness) or when a property (e.g. conductance orresistivity) of a selectively removable material reaches a thresholdvalue; e.g., a decrease in conductivity equal to 50%, optionally forsome applications 80%, and optionally for some applications 95% oralternatively when conductivity equals 0. In an embodiment, thepreselected time may be calculated according to:

${t_{c} = {\frac{4\rho_{m}M\mspace{14mu}\left( {H_{2}O} \right)}{{kw}_{0}M\mspace{14mu}(m)}\frac{\sqrt{\frac{{kh}_{0}^{2}}{D}}}{\tanh\sqrt{\frac{{kh}_{0}^{2}}{D}}}}};$where t_(c) is the critical time, ρ_(m) is the mass density of thematerial, M(H₂O) is the molar mass of water, M(m) is the molar mass ofthe material, h₀ is the initial thickness of the material, D is thediffusivity of water, k is the reaction constant for the dissolutionreaction, and w₀ is the initial concentration of water.

A “pre-selected rate” refers to an amount of selectively removablematerial removed from a device or component per unit time. Thepre-selected rate may be reported as an average rate (over the lifetimeof the device or component) or an instantaneous rate. When a rate typeis not specified, an average rate is assumed.

A “programmable transformation” refers to a pre-selected orpredetermined physical, chemical and/or electrical change within atransient electronic device that provides a change of the function ofthe device from a first condition to a second condition. A programmabletransformation may be pre-set at the time of component/devicefabrication or deployment or a real-time triggered programmabletransformation controlled by a transmitter that provides a signalreceived by the device.

A “transience profile” describes a change in physical parameters orproperties (e.g., thickness, conductivity, resistance, mass, porosity,etc.) of a material as a function of time, e.g., thickness gained/lostover time. A transience profile may be characterized by a rate, forexample, the rate of change of the physical dimensions (e.g., thickness)or physical properties (e.g., mass, conductivity, porosity, resistance,etc.) of a selectively transformable material. The invention includesselectively transformable materials having a transience profilecharacterized by a rate of change of the physical dimensions (e.g.,thickness) or physical properties (e.g., mass, conductivity, etc.) thatis constant or varies as a function of time.

“Degradable” refers to material that is susceptible to being chemicallyand/or physically broken down into smaller segments. Degradablematerials may, for example, be decomposed, resorbed, dissolved,absorbed, corroded, de-polymerized and/or disintegrated. In someembodiments, the invention provides degradable devices.

“Bioresorbable” refers to a material that is susceptible to beingchemically broken down into lower molecular weight chemical moieties byreagents that are naturally present in a biological environment. In anin-vivo application, the chemical moieties may be assimilated into humanor animal tissue. A bioresorbable material that is “substantiallycompletely” resorbed is highly resorbed (e.g., 95% resorbed, or 98%resorbed, or 99% resorbed, or 99.9% resorbed, or 99.99% resorbed), butnot completely (i.e., 100%) resorbed. In some embodiments, the inventionprovides bioresorbable devices.

“Biocompatible” refers to a material that does not elicit animmunological rejection or detrimental effect when it is disposed withinan in-vivo biological environment. For example, a biological markerindicative of an immune response changes less than 10%, or less than20%, or less than 25%, or less than 40%, or less than 50% from abaseline value when a biocompatible material is implanted into a humanor animal. In some embodiments, the invention provides biocompatibledevices.

“Bioinert” refers to a material that does not elicit an immune responsefrom a human or animal when it is disposed within an in-vivo biologicalenvironment. For example, a biological marker indicative of an immuneresponse remains substantially constant (plus or minus 5% of a baselinevalue) when a bioinert material is implanted into a human or animal. Insome embodiments, the invention provides bioinert devices.

“Ecocompatible” refers to a material that is environmentally benign inthat it may be degraded or decomposed into one or more compounds thatoccur naturally in the environment. In some embodiments, the inventionprovides ecocompatible devices.

“Nanostructured material” and “microstructured material” refer tomaterials having one or more nanometer-sized and micrometer-sized,respectively, physical dimensions (e.g., thickness) or features such asrecessed or relief features, such as one or more nanometer-sized andmicrometer-sized channels, voids, pores, pillars, etc. The relieffeatures or recessed features of a nanostructured material have at leastone physical dimension selected from the range of 1-1000 nm, while therelief features or recessed features of a microstructured material haveat least one physical dimension selected from the range of 1-1000 μm.Nanostructured and microstructured materials include, for example, thinfilms (e.g., microfilms and nanofilms), porous materials, patterns ofrecessed features, patterns of relief features, materials havingabrasive or rough surfaces, and the like. A nanofilm structure is alsoan example of a nanostructured material and a microfilm structure is anexample of a microstructured material. In an embodiment, the inventionprovides device comprising one or more nanostructured or microstructuredinorganic semiconductor components, one or more nanostructured ormicrostructured metallic conductor components, one or morenanostructured or microstructured dielectric components, one or morenanostructured or microstructured encapsulating layers and/or one ormore nanostructured or microstructured substrate layers.

A “nanomembrane” is a structure having a thickness selected from therange of 1-1000 nm or alternatively for some applications a thicknessselected from the range of 1-100 nm, for example provided in the form ofa ribbon, cylinder or platelet. In some embodiments, a nanoribbon is asemiconductor, dielectric or metallic conductor structure of anelectronic device. In some embodiments, a nanoribbon has a thicknessless than 1000 nm and optionally less than 100 nm. In some embodiments,a nanoribbon has ratio of thickness to a lateral dimension (e.g., lengthor width) selected from the range of 0.1 to 0.0001.

“Dielectric” refers to a non-conducting or insulating material. In anembodiment, an inorganic dielectric comprises a dielectric materialsubstantially free of carbon. Specific examples of inorganic dielectricmaterials include, but are not limited to, silicon nitride, silicondioxide, silk, silk composite, elastomers and polymers.

“Polymer” refers to a macromolecule composed of repeating structuralunits connected by covalent chemical bonds or the polymerization productof one or more monomers, often characterized by a high molecular weight.The term polymer includes homopolymers, or polymers consistingessentially of a single repeating monomer subunit. The term polymer alsoincludes copolymers, or polymers consisting essentially of two or moremonomer subunits, such as random, block, alternating, segmented,grafted, tapered and other copolymers. Useful polymers include organicpolymers or inorganic polymers that may be in amorphous, semi-amorphous,crystalline or partially crystalline states. Crosslinked polymers havinglinked monomer chains are particularly useful for some applications.Polymers useable in the methods, devices and components include, but arenot limited to, plastics, elastomers, thermoplastic elastomers,elastoplastics, thermoplastics and acrylates. Exemplary polymersinclude, but are not limited to, acetal polymers, biodegradablepolymers, cellulosic polymers, fluoropolymers, nylons, polyacrylonitrilepolymers, polyamide-imide polymers, polyimides, polyarylates,polybenzimidazole, polybutylene, polycarbonate, polyesters,polyetherimide, polyethylene, polyethylene copolymers and modifiedpolyethylenes, polyketones, poly(methyl methacrylate),polymethylpentene, polyphenylene oxides and polyphenylene sulfides,polyphthalamide, polypropylene, polyurethanes, styrenic resins,sulfone-based resins, vinyl-based resins, rubber (including naturalrubber, styrene-butadiene, polybutadiene, neoprene, ethylene-propylene,butyl, nitrile, silicones), acrylic, nylon, polycarbonate, polyester,polyethylene, polypropylene, polystyrene, polyvinyl chloride, polyolefinor any combinations of these.

“Elastomeric stamp” and “elastomeric transfer device” are usedinterchangeably and refer to an elastomeric material having a surfacethat can receive as well as transfer a material. Exemplary conformaltransfer devices useful in some methods of the invention includeelastomeric transfer devices such as elastomeric stamps, molds andmasks. The transfer device affects and/or facilitates material transferfrom a donor material to a receiver material. In an embodiment, a methodof the invention uses a conformal transfer device, such as anelastomeric transfer device (e.g. elastomeric stamp) in a microtransferprinting process, for example, to transfer one or more singlecrystalline inorganic semiconductor structures, one or more dielectricstructures and/or one or more metallic conductor structures from afabrication substrate to a device substrate.

“Elastomer” refers to a polymeric material which can be stretched ordeformed and returned to its original shape without substantialpermanent deformation. Elastomers commonly undergo substantially elasticdeformations. Useful elastomers include those comprising polymers,copolymers, composite materials or mixtures of polymers and copolymers.Elastomeric layer refers to a layer comprising at least one elastomer.Elastomeric layers may also include dopants and other non-elastomericmaterials. Useful elastomers include, but are not limited to,thermoplastic elastomers, styrenic materials, olefinic materials,polyolefin, polyurethane thermoplastic elastomers, polyamides, syntheticrubbers, PDMS, polybutadiene, polyisobutylene,poly(styrene-butadiene-styrene), polyurethanes, polychloroprene andsilicones. In some embodiments, an elastomeric stamp comprises anelastomer. Exemplary elastomers include, but are not limited to siliconcontaining polymers such as polysiloxanes including poly(dimethylsiloxane) (i.e. PDMS and h-PDMS), poly(methyl siloxane), partiallyalkylated poly(methyl siloxane), poly(alkyl methyl siloxane) andpoly(phenyl methyl siloxane), silicon modified elastomers, thermoplasticelastomers, styrenic materials, olefinic materials, polyolefin,polyurethane thermoplastic elastomers, polyamides, synthetic rubbers,polyisobutylene, poly(styrene-butadiene-styrene), polyurethanes,polychloroprene and silicones. In an embodiment, a polymer is anelastomer.

“Conformable” refers to a device, material or substrate which has abending stiffness that is sufficiently low to allow the device, materialor substrate to adopt any desired contour profile, for example a contourprofile allowing for conformal contact with a surface having a patternof relief features. In certain embodiments, a desired contour profile isthat of a tissue in a biological environment.

“Conformal contact” refers to contact established between a device and areceiving surface. In one aspect, conformal contact involves amacroscopic adaptation of one or more surfaces (e.g., contact surfaces)of a device to the overall shape of a surface. In another aspect,conformal contact involves a microscopic adaptation of one or moresurfaces (e.g., contact surfaces) of a device to a surface resulting inan intimate contact substantially free of voids. In an embodiment,conformal contact involves adaptation of a contact surface(s) of thedevice to a receiving surface(s) such that intimate contact is achieved,for example, wherein less than 20% of the surface area of a contactsurface of the device does not physically contact the receiving surface,or optionally less than 10% of a contact surface of the device does notphysically contact the receiving surface, or optionally less than 5% ofa contact surface of the device does not physically contact thereceiving surface. In an embodiment, a method of the invention comprisesestablishing conformal contact between a conformal transfer device andone or more single crystalline inorganic semiconductor structures, oneor more dielectric structures and/or one or more metallic conductorstructures, for example, in a microtransfer printing process, such asdry transfer contact printing.

“Young's modulus” is a mechanical property of a material, device orlayer which refers to the ratio of stress to strain for a givensubstance. Young's modulus may be provided by the expression:

$\begin{matrix}{{E = {\frac{({stress})}{({strain})} = {\left( \frac{L_{0}}{\Delta\; L} \right)\left( \frac{F}{A} \right)}}},} & (I)\end{matrix}$where E is Young's modulus, L₀ is the equilibrium length, ΔL is thelength change under the applied stress, F is the force applied, and A isthe area over which the force is applied. Young's modulus may also beexpressed in terms of Lame constants via the equation:

$\begin{matrix}{{E = \frac{\mu\left( {{3\lambda} + {2\mu}} \right)}{\lambda + \mu}},} & ({II})\end{matrix}$where λ and μ are Lame constants. High Young's modulus (or “highmodulus”) and low Young's modulus (or “low modulus”) are relativedescriptors of the magnitude of Young's modulus in a given material,layer or device. In some embodiments, a high Young's modulus is largerthan a low Young's modulus, preferably about 10 times larger for someapplications, more preferably about 100 times larger for otherapplications, and even more preferably about 1000 times larger for yetother applications. In an embodiment, a low modulus layer has a Young'smodulus less than 100 MPa, optionally less than 10 MPa, and optionally aYoung's modulus selected from the range of 0.1 MPa to 50 MPa. In anembodiment, a high modulus layer has a Young's modulus greater than 100MPa, optionally greater than 10 GPa, and optionally a Young's modulusselected from the range of 1 GPa to 100 GPa. In an embodiment, a deviceof the invention has one or more components, such as substrate,encapsulating layer, inorganic semiconductor structures, dielectricstructures and/or metallic conductor structures, having a low Young'smodulus. In an embodiment, a device of the invention has an overall lowYoung's modulus.

“Inhomogeneous Young's modulus” refers to a material having a Young'smodulus that spatially varies (e.g., changes with surface location). Amaterial having an inhomogeneous Young's modulus may optionally bedescribed in terms of a “bulk” or “average” Young's modulus for theentire material.

“Low modulus” refers to materials having a Young's modulus less than orequal to 10 MPa, less than or equal to 5 MPa or less than or equal to 1MPa.

“Bending stiffness” is a mechanical property of a material, device orlayer describing the resistance of the material, device or layer to anapplied bending moment. Generally, bending stiffness is defined as theproduct of the modulus and area moment of inertia of the material,device or layer. A material having an inhomogeneous bending stiffnessmay optionally be described in terms of a “bulk” or “average” bendingstiffness for the entire layer of material.

Transient devices and methods of making and using the devices will nowbe described with reference to the figures. For clarity, multiple itemswithin a figure may not be labeled and the figures may not be drawn toscale.

FIG. 1 shows a top perspective view of a transient device 100 havingphysical dimensions including a vertical dimension or height, h, alateral dimension or width, b, and a longitudinal dimension or length,L. Transient device 100 may have any regular or irregular shape, butwill often be in the form of a square or rectangular parallelogram.Transient device 100 comprises a degradable substrate 102 upon which oneor more device components 104, 106 are disposed. In some embodiments,device component 106 is an interconnect that joins two or more otherdevice components 104 in physical and/or electrical communication withone another. Optionally, one or more device components 104, 106 may bepartially or completely encapsulated by an encapsulating material (notshown). Transient device 100 may be powered or actuated remotely (e.g.,wirelessly), or via physical connection to a power source (not shown).

FIG. 2 provides a flowchart 200 illustrating exemplary steps for usingtransient device 100. In steps 202 and 204, a user provides a transientdevice that is contacted with an environment. In optional step 206,transient device 100 actuates the environment or senses a parameterassociated with the environment. Finally, the transient device isprogrammably transformed, in step 208, by at least one internal and/orexternal stimulus.

In some embodiments, implantable biomedical devices advantageouslyutilize silk as a bioresorbable substrate. Silk is biocompatible,FDA-approved, optically transparent, mechanically robust (highmechanical modulus and toughness), and flexible in thin film form. It isalso compatible with aqueous processing, which preserves sensitiveelectronic functions, and amenable to chemical and biologicalfunctionalization. The presence of diverse amino acid side chainsfacilitates coupling chemistry for functionalizing silks. Silk is alsowater soluble with programmable rates of proteolytic biodegradation(yielding non-inflammatory amino acids) over a range from minutes tohours to years.

Some other natural polymers that exhibit properties similar to oranalogous to silk include, but are not limited to, chitosan, collagen,gelatin, agarose, chitin, polyhydroxyalkanoates, pullan, starch (amyloseamylopectin), cellulose, hyaluronic acid, or any combination of these.

Silk may be obtained from various natural sources, for example, from thesilkworm Bombyx mori or from the spider Nephila clavipes. Silk solutionsused in accordance with embodiments of the present invention may beobtained, for example, from a solution containing a dissolved silkwormsilk (e.g. from Bombyx mon), a dissolved spider silk (e.g. from Nephilaclavipes), or from a solution containing a recombinant silk, such asfrom bacteria, yeast, mammalian cells, transgenic animals, or transgenicplants.

In an embodiment, the silk of the bioresorbable substrate may be silkfibroin protein, which consists of layers of antiparallel beta sheetsand has a primary structure consisting mainly of the recurrent aminoacid sequence (Gly-Ser-Gly-Ala-Gly-Ala)_(n). Fibroin is known to arrangeitself in three structures, called silk I, II, and III. Silk I is thenatural, amorphous form of fibroin, as emitted from the Bombyx mori silkglands. Silk II refers to the crystalline arrangement of fibroinmolecules in spun silk, which has greater strength. Silk III is formedprincipally in solutions of fibroin at an interface (i.e. air-waterinterface, water-oil interface, etc.). In the disclosed transientdevices, silk I, II and/or III may be used.

Silk substrates may be prepared from material derived from Bombyx moricocoons, according to published procedures. See, Sofia, S., McCarthy, M.B., Gronowicz, G. & Kaplan, D. L. Functionalized silk-based biomaterialsfor bone formation. J. Biomed. Mater. Res. 54, 139-148 (2001); Perry,H., Gopinath, A., Kaplan, D. L., Negro, L. D. & Omenetto, F. G. Nano-and micropatterning of optically transparent, mechanically robust,biocompatible silk fibroin films. Adv. Mater. 20, 3070-3072 (2008); andWO 2008/108838. Briefly, boiling the cocoons in a 0.02 M aqueoussolution of sodium carbonate for 60 minutes removed sericin, awater-soluble glycoprotein that binds fibroin filaments in the cocoonbut which can induce undesirable immunological responses. An aqueoussolution of lithium bromide at 60° C. solubilized the silk fibroinfibers and subsequent dialysis removed the lithium bromide.Centrifugation followed by microfiltration eliminated particulates toyield solutions of 8-10% silk fibroin with minimal contaminants.

Using an alternate method, silk solutions may be prepared using organicsolvents, as described in WO 2008/108838 which is hereby incorporated byreference in its entirety. Use of organic solvents in the preparation ofsilk materials can alter the biocompatibility and physical properties ofsilk materials. For example, immersion of silk films in organicsolvents, such as methanol, may cause dehydration of the hydrated orswollen structure, leading to crystallization and, thus, loss ofsolubility in water. Further, the use of organic solvents can render thesilk material less degradable.

As noted above, the presence of organic solvents, as compared to aqueoussolvents, in the silk solution, may generate silk substrates with morecrystalline structures, as compared to amorphous structures. Thisphenomenon may be used to control, for example, the rate ofbioresorption or degradation of the silk. Accordingly, depending on thedesired resorption or degradation rate, the silk solution may beprepared using any suitable ratio of aqueous:organic solution, forexample, 100% aqueous, about 80% aqueous, about 60% aqueous, about 50%aqueous, about 40% aqueous, about 20% aqueous, or about 10% aqueous.

Additional techniques may be used to control the degradation rate of thesilk substrate. For example, the rate at which degradation occurs may betailored by altering: substrate material, substrate thickness,crosslinking, the extent of inter-chain hydrogen bonding or Van derWaals forces, and/or molecular alignment (e.g., via mono-axial orbi-axial stretching, spinning into fiber, and/or weaving).

Additional bioresorbable polymers including, but not limited to, abiopolymer, a synthetic polymer, a protein, a polysaccharide,poly(glycerol-sebacate) (PGS), polydioxanone, poly(lactic-co-glycolicacid) (PLGA), polylactic acid (PLA), collagen, chitosan, or anycombination of these, may be used alone as the degradable substrate ormay be added to the silk solution to generate composite silk substrates.In one embodiment, a substrate comprises from about 50 to about 99.99parts by volume (vol %) silk protein solution and from about 0.01 toabout 50 vol % additional polymer.

In some aspects, transient devices described herein may be used for drugdelivery. In one embodiment, one or more therapeutic agents may beencapsulated within the substrate material as a liquid, a gel, adispersed solid, or any other appropriate physical form, to beadministered to a patient upon degradation of the substrate. To formthese therapeutically enhanced substrate materials, the degradablepolymer solution may be mixed with one or more therapeutic agents, andoptionally a pharmaceutically acceptable carrier, prior to forming thesubstrate. Any pharmaceutical carrier that does not dissolve thedegradable material may be used.

In some embodiments, transient devices of the invention are used toadminister, deliver and/or activate a therapeutic agent provided to asubject. In an embodiment of this aspect, the degradable substrate is amultifunctional component that releases a therapeutic agent uponadministration to a biological environment and/or contact with a targettissue. The invention includes, for example, degradable substrateshaving embedded therapeutic agents, such as drugs (e.g., small moleculetherapeutics), nanoparticles and/or biomolecules, such as proteins,peptides, oligonucleotides (e.g., DNA or RNA), etc. This aspect of thepresent invention may be useful for a range of therapeutic applicationsincluding controlled release of therapeutic agents and/or targetedadministration of therapeutic agents to a selected tissue type. Releaseof the therapeutic agent in these embodiments may occur by processesmediated by resorption of the degradable substrate in contact with atarget tissue. The invention includes implantable devices and systemswherein the electronic device component mediates release of therapeuticagent from the degradable substrate via thermal means, for example bylocal heating of components of the implantable device, such as thedegradable substrate. The invention includes implantable devices andsystems wherein the electronic device component mediates release oftherapeutic agent from the degradable substrate via processes driven bygeneration and control of local electric fields, such as electrophoresisprocesses for the release of proteins or peptides. The inventionincludes implantable devices and systems wherein the electronic devicecomponent mediates release and/or activation of a therapeutic agent fromthe degradable substrate via processes driven by absorption ofelectromagnetic radiation. In an embodiment, the implantable deviceincludes an electronic device component, such as a laser or LED array,capable of optically activating a therapeutic agent during and/or uponrelease from the degradable substrate. This aspect of the invention isuseful for therapeutic applications including phototherapy.

Therapeutic agents that may be used in conjunction with the devicesdescribed herein include, but are not limited to: small molecules;proteins; peptides; nucleotides; nucleic acids; carbohydrates; simplesugars; cells; genes; anti-thrombotics; anti-metabolics; anticoagulants;antimitotics; fibrinolytics; anti-inflammatory steroids; monoclonalantibodies; vitamins; sedatives; steroids; hypnotics; antiinfectives,such as antibiotics and antiviral agents; chemotherapeutic agents (i.e.,anticancer agents); prostaglandins, radiopharmaceuticals, anti-rejectionagents; analgesics; anti-inflammatory agents; hormones, such assteroids; growth factors (inhibitors and promoters), such as epidermalgrowth factor, fibroblast growth factor, platelet-derived growth factor,insulin-like growth factor, transforming growth factors, and vascularendothelial growth factor; anti-angiogenic proteins such as endostatin;polysaccharides; glycoproteins; lipoproteins; and any combination ofthese.

For example, a therapeutic agent circulating through an in-vivobiological environment may be activated when it receives electromagneticradiation from a biomedical device implanted at a therapeutic site. Inparticular, energy within the ultraviolet and visible regions of theelectromagnetic spectrum may be useful.

The invention may be further understood by the following non-limitingexamples.

EXAMPLE 1

FIGS. 3a, 3b and 7 provide images and schematic diagrams of ademonstration platform for the technology. All of the components shownhere, ranging from the inductors, capacitors, resistors, diodes,transistors, interconnects and crossovers, to the substrate andencapsulation layers disappear completely, through reactive dissolutionby hydrolysis, as illustrated in the time sequence of images in FIG. 3c. This example of transient electronics uses magnesium (Mg) for theconductors, magnesium oxide (MgO) and silicon dioxide (SiO₂) for thedielectrics, monocrystalline silicon (Si) NMs for the semiconductors,and silk (not only water soluble but also enzymaticallydegradable^(4,5)), for the substrate and packaging material. Thefabrication involves a combination of transfer printing (Si NMs)(automated manufacturing tools based on this transfer printing processare presently used in pilot line production of high efficiencyphotovoltaic modules that incorporate large-scale arrays of microscale,multijunction solar cells)⁶, physical vapour deposition throughfine-line stencil masks (Mg, MgO, SiO₂) and solution casting (silk). Asadhesion promoters for Mg, MgO was used in certain cases and ultrathinlayers of titanium in others. Device fabrication was possible withoutthe titanium, although with somewhat lower yields.

The chemical reactions responsible for dissolution of each materialappear in FIG. 3d . The Si NMs and layers of SiO₂ are particularlyimportant, due to their important roles in high performance transistors,diodes, photodetectors, solar cells, temperature sensors, strain gaugesand other semiconductor devices, as described subsequently. For both,hydrolysis forms ortho-silicic acid (Si(OH)₄), whose water solubility is˜0.10 g/L at room temperature, as determined from studies of nanoporoussilicon matrices⁷⁻⁹. The NM geometry is important because it enableshigh performance devices and planar architectures, minimizes the amountof material that must be consumed during the transient step, andprovides mechanics and processing options that are favorable forheterogeneous integration onto substrates such as silk⁴. The secondcharacteristic allows access to high rates of transience while avoidingsolubility limits and potentially adverse biological responses, forapplications where bio-compatibility is important. A typical transistordescribed here involves less than ˜1 μg of Si, which can be dissolved asSi(OH)₄ in as little as 30 μL of water (or bio-fluid)⁹. Straightforwardreductions in the dimensions of the devices could decrease even furtherthe required amount of Si. For example, the mass of Si in the activeregion of a modern MOSFET built on an ultrathin silicon-on-insulator(SOI) wafer is ˜10 fg, which corresponds to solubility in as little as˜300 fL¹⁰.

FIG. 4a presents atomic force micrographs of a Si NM (3×3 μm) withthickness of 70 nm, collected at different stages of dissolution inphosphate buffer solution (PBS; pH of 7.4) at a physiologically relevanttemperature (37° C.), to simulate transience by bioresorption (See FIG.8 for Si NMs with different thicknesses). The kinetics can be capturedanalytically using models of reactive diffusion (FIG. 4b ) in which therate limiting step is defined by diffusion of water and hydroxide ionsinto the Si and reaction throughout the thickness direction y, accordingto

$\begin{matrix}{{{{D\frac{\partial^{2}w}{\partial y^{2}}} - {kw}} = \frac{\partial w}{\partial t}},} & {11\text{-}13}\end{matrix}$where D and k are the diffusivity for water and the reaction constantbetween silicon and PBS, respectively, and w is the concentration ofwater. Upon dissolution, the following equilibrium is formulated:Si+4H₂O<->Si(OH)₄+2H₂, where the neutral ortho-silicic acid leaves thesilicon surface by diffusion. In this model, for times, t, beforecomplete physical disappearance, the thickness of the Si NM (h)decreases in an approximately linear fashion with t, according toh=h ₀ −α√{square root over (kD)}t tan h√{square root over (kh ₀ ²/D)},  (1)where h₀ is initial thickness, α=[M(Si)/M (H₂O)]w₀/(4 ρ_(si)), M(H₂O)and M(Si) are the molar masses of water and silicon, respectively, w₀ isthe initial water concentration, and ρ_(Si)=2.329 g/cm³ is the massdensity of Si. This expression captures the experimental observationsfor h₀=35, 70 and 100 nm at body temperature (37° C.) (FIG. 4c ) fork=5.0×10⁻⁶ s⁻¹ and D=4.5×10⁻¹⁶ cm²/S and at room temperature (25° C.,FIG. 9a ) when k=2.8×10⁻⁶ s⁻¹ and D=3.4×10⁻¹⁶ cm²/S, consistent withArrhenius scaling¹⁴. The critical time for the thickness to reach zerois approximately given by t_(c)=(α tan h√{square root over (kh₀²/D)})⁻¹h₀/√{square root over (kD)}. The results are t=14, 16 and 19days for h₀=35, 70 and 100 nm, respectively, at body temperature,consistent with experiment. Models that include time dependent reactionrate constants can capture additional features.

Similar calculations quantitatively capture related behaviors in othermaterials for transient electronics, including those in FIG. 3. FIG. 4dpresents an example of a meander trace of Mg (150 nm) on a thin film ofMgO (10 nm; adhesion promoter), in which the measured changes inresistance correlate well to those expected based on computed changes inthickness (FIG. 4e , FIGS. 10a and b , and see Example 2 for details),where the resistance is given by R₀×(h/h₀)⁻¹, and R₀ is the initialresistance. (Other examples appear in FIG. 11.) This result connects akey electrical property to models of reactive diffusion, therebysuggesting the capacity to use such analytics in conjunction withestablished circuit simulators as a comprehensive design approach fortransient electronics. Experimental validation of these models allowstheir predictive use in assessing the behavior of integrated devicescomprised of these materials.

The predictive use of these models highlights the importance of NMs andthin film device designs. In particular, t_(c) for a piece of siliconwith dimensions comparable to those of a diced integrated circuit (˜12mm×˜12 mm×˜700 μm) is estimated to be more than ˜600 years, and wouldrequire nearly ˜8 L of water to avoid solubility limits⁹. By comparison,t_(c) for a Si NM with similar lateral dimensions and a thickness of 35nm is less than ˜10 days, and can occur in as little as ˜0.4 mL ofwater. The timescales for NM-based electronic components can beextended, in controlled amounts, by adding transient encapsulatinglayers and packaging materials; they can be reduced by decreasing thecritical dimensions or by physically structuring the materials in a waythat accelerates dissolution by disintegration (FIG. 12). FIGS. 4e and10 show results of measured transience in a serpentine resistor of Mg,encapsulated with different thicknesses of MgO, and with combinations ofMgO and overcoats of silk. Corresponding modeling results are also shown(See Example 2 for details), all of which agree well with experimentsand general expectation. Silk is attractive for this purpose because itssolubility in water can be programmed, over several orders of magnitude,through control of crystallinity^(5,15). Other biodegradable polymerscan also be used, as shown in FIG. 13. Studies of transience at thedevice level are also important. FIG. 4f shows examples of metal oxidesemiconductor field effect transistors (MOSFETs) formed with Si NMs,SiO₂ dielectrics and Mg electrodes, with encapsulating layers of MgO andcrystallized silk. The devices, which are described in detail next andin Example 2, show two-stage kinetics in their functional transience. Inparticular, immersion in water for up to ˜90 hours causes negligiblechange in key device characteristics, such as mobility, on/off currentratio (I_(on)/I_(off)) and threshold voltage (V_(th)). Functionaldegradation occurs in a relatively narrow time interval following thisperiod of stable operation. The encapsulation layers define the firsttimescale; the Mg electrodes define the second. These behaviors areconsistent with expectation based on separate experimental andtheoretical studies of the constituent materials. The results areimportant because they demonstrate that encapsulation layers, which donot provide active roles in the devices, can be exploited to define thetransience time in a way that is decoupled from system or device levelfunction. Although different device types require Si NMs with differentthicknesses, the results of FIG. 4 indicate that the Mg and theencapsulation layers play the dominant roles in determining thetimescales for transience in function, for practical cases exploredhere. (Due to the operational mode of transience in the cases presentedhere, long-term storage should involve a dry environment).

These materials, fabrication techniques and modeling tools can yieldcomponent devices for almost any type of transient electronic system, inCMOS designs. FIG. 5 presents several examples, including additionaldetails on MOSFETs likes those in FIG. 4, where both n- and p-channeloperation is possible, where Mg electrodes (thickness ˜250 nm) serve asthe source, drain and gate; MgO and/or SiO₂ provide the gate dielectrics(thicknesses between 100 and 150 nm); and Si NMs (thickness 300 nm) actas the semiconductor. The resulting electrical properties for a typicaln-channel device with L=20 μm and W=900 μm, include saturation andlinear regime mobilities of 560 cm²/Vs and 660 cm²/Vs, respectively,on/off ratios of >10⁵, subthreshold slopes of 160 mV/dec (at V_(d)=0.1V) and width-normalized current outputs of 0.34 mA/mm (at V_(g)=5 V).These properties, as well as those of similar p-channel devices, comparefavorably to the performance of counterparts with similar criticaldimensions formed on SOI wafers. The properties of the devices arebelieved to scale in the usual way with device dimensions that approachthose found in state-of-the-art integrated circuits. (For the range ofchannel lengths investigated, contact resistances do not limitperformance. See FIG. 14.)

In addition to MOSFETs, many other classes of semiconductor devices andpassive components are possible. Images and electrical characteristicsof some examples appear in FIG. 5, FIG. 15, and FIG. 16. The resistorsand diodes can serve as temperature sensors; the latter can also be usedin photodetectors and solar cells, as shown in FIG. 5 and FIG. 16. TheSi NM diode and Mg resistive temperature sensors show sensitivities of−2.23 mV/° C. (change in voltage for a given current output) and 0.23%/°C. (percentage change in resistance) both of which are consistent withthe behavior of conventional, non-transient devices¹⁶. With currentdesigns and standard measurement systems, changes in temperature of0.004˜0.007° C. can be resolved. Ultrathin silicon solar cells (˜3 μmthick) provide fill factors of 66% and overall power conversionefficiencies of ˜3%, even without light trapping structures, backsidereflectors or anti-reflection coatings. Doped Si NMs with Mg contactscan serve as strain gauges (FIG. 5e , left), with gauge factors ofnearly ˜40 (FIG. 5f , left, and FIG. 16b ), comparable to those ofstate-of-the art devices¹⁷. The technologies and fabrication schemespresented here are sufficiently well developed to enable functional,interconnected arrays of sensors. As an example, a transient digitalimaging device was built, including collections of Si NM photodiodeswith blocking diodes for passive matrix addressing (FIG. 5e , right),capable of capturing pictures when operated in a scanned mode (FIG. 5f ,right, and FIG. 16d ). (See more details on device dimensions in FIG.17.) The yield here is >90% (i.e. 58 out of 64 pixels were fullyfunctional. See FIG. 18). Many other possibilities can be realized.

The transience times of various elements in an integrated system can bethe same or different. The latter can be achieved by use of variedthicknesses and/or stack compositions, or even via combination withnon-transient materials. The last possibility is shown in a logic gate(inverter) in the right hand frames of FIGS. 5c and 5d , where anon-transient metal (Au) serves as source, drain and gate electrodes fortwo transistors joined by transient Mg interconnects. In this case,transience in the Mg converts the system from an inverter to twoisolated transistors. Variable dissolution rates in purely transientsystems can be similarly exploited to transform function over time.Disappearance of Mg shunt resistors or interconnects in systems that areotherwise encapsulated in MgO can affect the functional addition orsubtraction, respectively, of selected components in a transientintegrated circuit. FIGS. 5g and 5h illustrate the latter possibility,in a Si NM MOSFET logic gate that transforms from NOR to NAND operationdue to disappearance of an interconnect. Examples of transient shuntsappear in FIG. 19, where the effects are to change function from aresistor to a diode, from a NAND gate to an inverter, and from a NORgate to independent transistors.

This broad variety of device components, sensors and actuators enablesintegrated systems with useful levels of functionality. One option forpower supply is to exploit silicon solar cells such as those shown inFIG. 16a . Another uses inductors and capacitors like those in FIGS. 3a,5a and 15 as wireless antennas for near-field mutual inductance couplingto a separately powered, external primary coil. A compelling applicationof transient electronic systems is in implantable devices⁴, madepossible by the bio-compatibility of the constituent materialsintroduced here (FIG. 3). In particular, Mg is already used asstructural material in certain types of intravascular stents¹⁸. Silk isapproved for use in sutures, and tissue engineering⁵. A 1 μg transientSi NM device dissolved in 3 L of blood plasma yields a concentration of0.33 μg/L, which falls below physiological concentrations¹⁹. The boronand phosphorous doping needed to achieve n and p channel MOSFETs with SiNMs represent concentrations of ˜1 ng/L for phosphorous and ˜11 pg/L forboron, both of which are well below physiological levels (400 mg/L forphosphorous, 24 mg/L for boron in blood), even at minimum volumesnecessary to avoid solubility limits for Si (90 μg/L for phosphorous and1 μg/L for boron in 0.03 mL). The total amounts of phosphorous (˜3 ng)and boron (˜33 pg) are orders of magnitude smaller than the suggesteddaily intake (˜1500 mg for phosphorous and 1˜13 mg for boron) from anormal diet²⁰⁻²³.

To demonstrate bio-resorption and bio-compatibility, a series of in vivoexperiments were conducted. Various representative transient devices(e.g. FIG. 3 and others) were fabricated, sealed in silk packages,sterilized with ethylene oxide, and then implanted in the sub-dermalregion of BALB/c mice in accordance with Institutional Animal Care andUse Committee (IACUC) protocols. FIG. 6a shows the case of thedemonstration platform presented in FIG. 3. Examination after 3 weeks(FIG. 6b , left) revealed only faint residues, with evidence of slowreintegration into the subdermal layers along with apparentrevascularization. The histological section presented in FIG. 6b (right)shows the subdermal layer (A), the silk film (B) and the muscle layer(C), and absence of any inflammatory reaction. The data of FIG. 6b arerepresentative of standard animal evaluations of bioresorbable materialsor devices, following established protocols with multiple animals (N=3),each followed to a 3 week time point. Additional historical analysisappears in FIG. 20. Furthermore, the literature provides strong evidencefor the biocompatibility of the constituent materials in the transientelectronic systems. Silk is approved for clinical use in resorbablesurgical sutures and soft tissue scaffolds. Porous silicon and silicananoparticles are well established as viable candidates forbioresorbable drug delivery applications.^(8,24) MgO has been used ascoatings for these and related structures,²⁵ as well as for iron-basednanoparticle contrast agents for magnetic resonance imaging²⁶. Mg and Mgalloys have been demonstrated in biodegradable stents. The amounts ofmaterial utilized or envisioned for transient electronic constructs areorders of magnitudes lower than those experimentally proven to haveacceptable biocompatibility and, in certain cases, established roles inclinical use.

Inductive coils of Mg combined with resistive microheaters of doped SiNMs, integrated on silk substrates and housed in silk packages, providetransient thermal therapy systems for potential use in infectionmitigation and disease management, where localized heating canfacilitate bacterial suppression and provide localized pain relief²⁷⁻²⁹.A transient electronic bacteriocidal appliqué that can be delivered tothe external surfaces of medical implant devices, such as permanentpacemakers, implantable defibrillators, mechanical circulatory supportdevices or artificial hips and knees is an example of a transientthermal therapy system. The aim is to control surgical siteinfections^(30,31), with a viable, effective, non-antibiotic,programmable bacteriocide that disappears as the patient moves beyondthe period of greatest risk, to rid the patient of unnecessary deviceburden. FIGS. 6c, d show the case of a metamaterial RF antenna, as ageneralized component building block for such a device, for whichtransience can be monitored continuously after implantation, in awireless mode using a network analyzer. The data indicate transientbehavior associated with slow diffusion of biofluids through the edgesof the silk package, with a measured Q factor that has time dependenceconsistent with theoretical models. See Example 2 for details. FIG. 6eshows an image of a device formed on glass that includes two coils withdifferent resonance frequencies (˜70 MHz and ˜140 MHz) and threeseparate heaters. Wirelessly operating either or both of these coilswith appropriate frequencies and power levels applied to a separateprimary coil enables full control of the system, as illustrated in thethermal images in the inset. (See FIGS. 21, 22 and 23 for otherexamples.) Incorporating additional coils and heaters can allow fullcontrol over more complex temperature distributions. Similar approachescan be used for spatially and temporally programmed electricalstimulation. To demonstrate in vivo functionality, a single-coil,single-heater, fully transient version of this device was implantedunder the skin of a Sprague-Dawley rat (FIG. 6f ). Inductive couplingthrough the skin generates a localized temperature increase of ΔT˜5° C.(FIG. 6g ), coincident with the position of the heater. The completedevice is transient, with a timescale of 15 days. The fifteen daytimescale was chosen to provide robust functionality during the mostcritical period, i.e. the first few days after an operation, tosterilize and maintain asepsis at the wound site. The device is nolonger needed after this time. Fifteen days represents a conservativeestimate of the required duration for efficacy, after which the devicedisappears to eliminate any long-term burden associated with additionalexogenous implant material. The silk package determines the transiencetime, which is adjustable via control of the degree of crystallinity inthe silk.

The concepts reported here establish a comprehensive baseline ofmaterials, modeling approaches, manufacturing schemes and device designsfor transient electronic systems, sensors, actuators and power supply.The Si nanomembranes (NMs), with or without SiO₂, are important elementsbecause their use immediately enables sophisticated semiconductorcomponents with both active and passive functionality. For thedielectrics and conductors, additional possibilities range from collagento poly(lactic-co-glycolic acid) and from iron to zinc, respectively.Alternative modes of transience include absorption, corrosion,de-polymerization and others. The rates for these processes could,conceivably, be adjustable in real-time, triggered, and/or sensitive tothe properties of the surrounding environment, determined by chemical orbiological events, or changes in temperature, pressure, or light.

Methods Summary

Fabrication of Devices

Doped single crystalline silicon nanomembranes (NMs) were prepared fromsilicon-on-insulator (SOI) wafers (top silicon thickness ˜300 nm,p-type, SOITEC, France). Undercut etching of the buried oxide withhydrofluoric acid (HF, 49% Electronic grade, ScienceLab, USA) formedisolated silicon NMs that were then transfer printed onto silk filmsubstrates. Gate and interlayer dielectrics (MgO or SiO₂), as well aselectrodes and interconnects (Mg) were deposited by electron-beamevaporation through high resolution stencil masks. For the latter, MgOlayers served as an adhesion promoter, except for the Mg/Si contactsneeded for the transistors, where Mg was either deposited directly or,for improved yields and adhesion strength, with a 5 nm layer of Ti.Additional details on fabrication processes appear in Example 2.

Preparation of Substrates, Encapsulation Layers and Packages

B. mori silkworm cocoons were cut and boiled in a 0.02 M Na₂CO₃ solutionto extract the glue-like sericin proteins. The remaining silk fibroinwas rinsed in Milli-Q water and dissolved in a LiBr solution at 60° C.for 4 h and then dialyzed with distilled water using dialysis cassettesfor a couple of days to remove LiBr. After centrifugation and filtrationto remove insoluble remnants, the silk solution was diluted to 5 to 7 wt% with ion-free distilled water and cast onto silicon substrates orglass slides to form ˜20 μm thick films and kept drying out in air toform silk films.

Silk Fibroin Packaging Scheme

Two ˜100 μm silk fibroin films, cut into areas of ˜5 cm×5 cm, werecross-linked via lamination at 120° C. for 60 s, to achieve maximumβ-sheet crystallinity and complete adhesion of the silk layers. Thefilms were stacked, and then one edge was sealed by re-lamination with10 μL of ˜6% silk fibroin solution as an adhesion layer. The silksubstrate for the functional device was left uncrosslinked, and placedin between the two cross-linked films. Finally, the other three sideswere sealed by the same method, fully encapsulating the sample inbetween the two films. Excess film was trimmed from the edges tominimize the size of the encapsulated sample for implantation.

Transience and Tunability in Transience at the Device Level

Various transient devices, including n-channel MOSFETs, diodes, logicgates (NAND) and Mg resistors were fabricated using procedures andmaterials described above. MgO (400 nm thick) and crystallized silk (70μm thick) served as encapsulation layers, deposited uniformly over thedevices as barriers to water. Details appear in Example 2.

Animal Model Evaluations

Female BALB/c mice (6-8 weeks old) and female albino Sprague-Dawley ratswere anesthetized with an intraperitoneal injection of aketamine/xylazine mix. The depth of anesthesia was monitored bypalpebral and withdrawal reflexes to confirm that the animal had reached“stage 3” of anesthesia. The back was shaved and cleaned at the incisionsite with 70% ethanol, followed by a betadine surgical scrub. Once stage3 was confirmed, a small longitudinal incision was made through the skinand the sterile implants (ethylene oxide sterilized) were inserted. Theincision was closed with a Dexon 5-0 suture. The animal was monitoreduntil ambulatory and given a dose of analgesia (Buprenorphinesubcutaneously) as soon as surgery was completed.

Transient Electronic Systems with Wireless Power Supply for ThermalTherapy.

The device includes silicon resistors, inductive coils andinterconnection lines, formed on a silk substrate, with a separate silkpackage. Transfer printing of doped silicon NMs was followed bydeposition and patterning of a first metal layer (Ti/Mg, 5/250 nm), aninterlayer dielectric (MgO, 400 nm) and a second metal layer (Ti/Mg,10/800 nm). The device was then packaged with silk, as describedpreviously. The coupling frequency for wireless power transmission was˜70 MHz.

REFERENCES

-   [1] Bettinger, C. J. & Bao, Z. Organic thin-film transistors    fabricated on resorbable, biomaterial substrates. Adv. Mater. 22,    651-655 (2010).-   [2] Irimia-Vladu, M. et al. Biocompatible and biodegradable    materials for organic field-effect transistors. Adv. Funct. Mater.    20, 4069-4076 (2010).-   [3] Legnani, C. et al. Bacterial cellulose membrane as flexible    substrate for organic light emitting devices. Thin Solid Films 517,    1016-1020 (2008).-   [4] Kim, D.-H. et al. Dissolvable films of silk fibroin for    ultrathin, conformal bio-integrated electronics. Nature Mater. 9,    511-517 (2010).-   [5] Wang, Y. et al. In vivo degradation of three-dimensional silk    fibroin scaffolds. Biomaterials 29, 3415-3428 (2008).-   [6] Hamer, J. W., Cok, R. S., Parrett, G. J., Winters, D. &    Primerano, B. AMOLED Displays Using Transfer-Printed Integrated    Circuits. SID Symposium Digest of Technical Papers 40, 947-950    (2009).-   [7] Low, S. P. & Voelcker, N. H. The biocompatibility of porous    silicon in tissues of the eye. Biomaterials 30, 2873-2880 (2009).-   [8] Park, J. -H. et al. Biodegradable luminescent porous silicon    nanoparticles for in vivo applications. Nature Mater. 8, 331-336    (2009).-   [9] Iler, R. K. Effect of adsorbed alumina on the solubility of    amorphous silica in water. J. of Colloid Interf. Sci. 43, 399-408    (1973).-   [10] Haran, B. S. et al. 22 nm technology compatible fully    functional 0.1 μm² 6 T-SRAM cell. Electron devices meeting, 2008.    IEDM 2008. IEEE International 1-4 (2008).-   [11] Danckwerts, P. V. Absorption by simultaneous diffusion and    chemical reaction. Tran. Faraday Soc. 46, 300-304 (1950).-   [12] Hawtin, P & Murdoch, R. The role of in-pore mass transport    resistance in the reaction of porous solids with gases. Chemical    Engineering Science 19, 819-834 (1964).-   [13] Ozisik, M. N. & Nordwall, H. J. Carbon loss from graphite    cylinders exposed to steam for short Times. Nuclear Science and    Engineering 44, 310-319 (1971).-   [14] Levine, R. D. Molecular Reaction Dynamics. Cambridge University    Press, Cambridge (2005).-   [15] Hu, X. et al. Regulation of silk material structure by    temperature-controlled water vapor annealing. Biomacromolecules 12,    1686-1696 (2011).-   [16] Santra, S., Guha, P. K., Ali, S. Z., Haneef, I. & Udrea, F.    Silicon on insulator diode temperature Sensor-a detailed analysis    for ultra-high temperature operation. IEEE Sens. J. 10, 997-1003    (2010).-   [17] Won, S. M. et al. Piezoresistive strain sensors and multiplexed    arrays using assemblies of single-crystalline silicon nanoribbons on    plastic substrates. IEEE T. Electron Dev. 58, 4074-4078 (2011).-   [18] Witte, F. The history of biodegradable magnesium implants. Acta    Biomater. 6, 1680-1692 (2010).-   [19] Becker, W. et al. Opinion of the scientific panel on dietetic    products, nutrition and allergies on a request from the commission    related to the tolerable upper intake level of silicon. The EFSA    Journal 60, 1-11 (2004).-   [20] Naghii, M. R., Mofid, M., Asgari, A. R., Hedayati, M. &    Daneshpour, M. -S. Comparative effects of daily and weekly boron    supplementation on plasma steroid hormones and proinflammatory    cytokines. J. Trace. Elem. Med. Bio. 25, 54-58 (2011).-   [21] Capala, J. et al. Boron neutron capture therapy for    glioblastoma multiforme: clinical studies in Sweden. J. Neuro-Oncol.    62, 135-144 (2003).-   [22] Block, G. A., Hulbert-Shearon, T. E., Levin, N. W. &    Port, F. K. Association of serum phosphorus and calcium 3 phosphate    product with mortality risk in chronic hemodialysis patients: a    national study. Am J Kidney Dis. 31, 607-617 (1998).-   [23] Young, V. R. et al. Dietary Reference Intakes for Calcium,    Phosphorus, Magnesium, Vitamin D, and Fluoride. National Academy    Press, Washington, D.C. (1997).-   [24] Trewyn, B. G. et al. Biocompatible mesoporous silica    nanoparticles with different morphologies for animal cell membrane    penetration. Chemical Engineering Journal 137, 23-29 (2008).-   [25] Shen, S. et al. Submicron particles of SBA-15 modified with MgO    as carriers for controlled drug delivery. Chem. Pharm. Bull. 55 (7),    985-991 (2007).-   [26] Martinez-Boubeta, C. et al. Self-assembled multifunctional    Fe/MgO nanospheres for magnetic resonance imaging and hyperthermia.    Nanomedicine: NBM 6, 362-370 (2010).-   [27] Tao, H. et al. Gold nanoparticle-doped biocompatible silk films    as a path to implantable thermo-electrically wireless powering    devices. Appl. Phys. Lett. 97, 123702 (2010).-   [28] Bramson, J. et al. Enabling topical immunization via    microporation: a novel method for pain-free and needle-free delivery    of adenovirus-based vaccines. Gene Ther. 10, 251-260 (2003).-   [29] Park, J. -W. et al. Wireless thermal micro-ablation of skin for    transdermal drug delivery. The 13^(th) International Conference on    Solid-state Sensors, Actuators and Microsystems 2, 1238-1241 (2005).-   [30] National Nosocomial Infections Surveillance (NNIS) report, data    summary from October 1986-April 1996, issued May 1996. A report from    the National Nosocomial Infections Surveillance (NNIS) System.    Am. J. Infect. Control 24, 380-388 (1996).-   [31] Anderson, D. J. et al. Clinical and financial outcomes due to    methicillin resistant Staphylococcus aureus surgical site infection:    a multi-center matched outcomes study. PLoS One 4, 1-8 (2009).

EXAMPLE 2

Fabrication Process

Single crystalline silicon nanomembranes (thickness ˜300 nm, p-type)were fabricated from silicon-on-insulator (SOI, SOITEC, France) wafersto form active areas of semiconductor devices. High temperaturediffusion of phosphorous (˜950° C.) and boron (˜1,000° C.) dopantsdefined highly doped regions for source and drain electrodes fortransistors and for n and p type areas of diodes, photodetectors andsolar cells. The lateral dimensions of the doped Si NMs were defined byreactive ion etching (RIE) with sulfur hexafluoride (SF₆) gas. Torelease the silicon from the SOI, the buried oxide was removed by wetetching with hydrofluoric acid (HF, 49% Electronic grade, ScienceLab,USA). Individual Si NMs formed by this process were transfer printed toa spin cast film of silk on a silicon wafer (as a temporary ‘carrier’substrate). Various metal and dielectric layers were then depositedusing electron beam (ebeam) evaporation through patterned polyimideshadow masks, to complete the devices and interconnections between them.

Functional Transformation Via Transience

Functional transformation by transience involved dissolution of certainmetal interconnects on timescales shorter than those associated withother parts of the system. This behavior was achieved by encapsulatingall regions of a circuit with a layer of MgO, except those associatedwith selected interconnects. The fabrication processes involved doped SiNMs in transistors with gate dielectric layers of MgO (150 nm) or SiO₂and source, drain, and gate electrodes of Mg (250 nm). Although notrequired, the use of thin layers of Ti to promote adhesion improved theyields. A typical thickness of Ti was 5 nm. Interconnect lines betweenlogic gates that used such transistors were formed by depositing Mg (150nm) on top of thin adhesion promoting layers of MgO (10 nm). The metaltraces were extended beyond the edges of the adhesion layer to ensureeffective electrical contact to the transistor electrodes. A finalencapsulation layer (MgO, 400 nm) was deposited in a suitable pattern,as described above. All patterning and deposition steps were performedwith polyimide shadow masks and electron beam evaporation.

Disintegrating Transistor

Instead of a single Si NM, arrays of narrow Si nanoribbons (NRs) can beused, as a way to accelerate transience through a process ofdisintegration that can enhance diffusive mass transport. Thefabrication in this case began with doped arrays of Si nanoribbonsdefined using procedures described in previous sections. Here, however,the buried oxide was only partially removed from beneath the Si NRs,although completely removed in the intervening regions. Next, patterninga layer of photoresist (AZ 5214) formed structures (i.e. anchor bars; 10μm×50 μm, 1.5 μm thick) that tethered the Si NRs to theirlithographically defined locations during a second etching step tocomplete the removal of the buried oxide. Next, the arrays of Si NRswere transfer printed onto a separate silicon substrate coated with alayer of silk. Evaporation of MgO (150 nm) on selected areas through apolyimide shadow mask defined gate dielectrics and adhesion promotinglayers. Finally, source, drain, and gate electrodes (Ti/Mg, 5/200 nm)were defined by a similar procedure, to complete the devices.

Dissolution Test of Silicon

A series of dissolution tests of Si NMs were performed to study thedetailed kinetics of the process. The test structures for this purposewere arrays of NMs in 3×3 μm square geometries, formed on SOI wafers byphotolithography and RIE. Thicknesses of 35 nm, 70 nm, and 100 nm wereinvestigated. The samples were placed into 50 mL of 1.0 M phosphatebuffered saline (PBS, pH 7.4, Sigma-Aldrich, USA) at either roomtemperature or temperatures close to those of the human body (37° C.).The samples were removed from the PBS solution every two days to measurethe height of Si NMs by atomic force microscopy (AFM, Asylum ResearchMFP-3D, USA). The PBS solution was replaced every other day.

High Resolution Stencil Masks

The sensitivity of silk to solvents and processes typically used inphotolithography motivated the use of high resolution shadow maskingtechniques for patterning metals and dielectrics. The required stencilmasks were made from uniform polyimide (PI) films (12.5 μm, Kapton,Dupont, USA), with openings etched in desired geometries. Thefabrication process began with attachment of such a film onto a glassslide coated with 10:1 poly(dimethylsiloxane) (monomer:catalyst, byweight) (PDMS, Sylgard 184, Dow Corning, USA). A metal layer (Cr/Au,10/150 nm) was deposited by electron beam evaporation, patterned usingphotolithography and etched with wet etchant. The metal served as a hardmask during dry etching through the PI films by RIE with oxygen (O₂)gas. After etching, the metal mask was removed by wet etching, and thepatterned PI films were carefully peeled away to form high resolutionstencil masks.

Encapsulation

Several different encapsulation layers were used to control thedissolution rate. Test structures used to study this process involvedtraces of Mg (300 nm) on glass slides. Parts of the traces were coatedwith various encapsulating materials: MgO (400 nm or 800 nm), silk, PLGA(poly(lactic-co-glycolic acid) 85:15, Mw 50,000-70,000, Sigma-Aldrich,USA) or collagen film (Devro, USA). For silk encapsulation, severalcycles of coating and treatment were repeated: dipping the samples intoa silk solution, drying at 65° C., treating with methanol to increasebeta sheet content and then drying. Multiple coating and subsequentmethanol treatments were used to increase the total thickness of thesilk films. PLGA was coated by placing PDMS enclosed around the area tobe coated and the internal volume was filled with a PLGA solution. Thesolution was allowed to evaporate, leaving only PLGA as an encapsulatinglayer. Collagen films were attached to glass edges using a concentratedsolution of PLGA, which was then allowed to dry, leaving a solid butflexible, adhesive layer between the collagen and glass. The results areshown in FIG. 13.

Studies of Transience and Tunability of Transience at the Device Level

In addition to the dissolution rate of transient materials, the behaviorat the device level was studied and strategies to control the transiencewere demonstrated. In particular, several different transient deviceswere first constructed, including n-channel MOSFETs, silicon diodes,logic gates (NAND) and Mg resistors. The fabrication, except for the Mgresistors, started with high temperature doping processes for the Si NMs(300 nm thick), as described in previous sections. Transfer printed SiNMs of this type served as the semiconductor layers. Layers of SiO₂ (100nm thick) deposited by PECVD served as the gate dielectrics for theindividual MOSFETs and those that were used in the NAND gates. Similarlayers, but with 400 nm thickness, provided interlayer dielectrics. Theelectrodes consisted of Mg (300 or 400 nm thick) deposited by electronbeam evaporation. The device layouts appear in FIG. 24.

Encapsulation layers of MgO (400 nm thick) and crystallized silk(approximately 70 μm thick) provided transient barriers to water. In alldevice cases, system configurations allowed continuous probing ofelectrical properties through remotely located electrode pads thatconnected to the devices, submerged in water contained in a removablewell made of PDMS, as in FIG. 25. The results, summarized in FIG. 26,show kinetics with two distinct timescales: the first, and longest,corresponds to transience in the encapsulation layers; the second is dueto the dissolution of active layers in the devices, where disappearanceof Mg occurs first. These behaviors illustrate transience at the devicelevel. The outcomes also demonstrate the ability to define transiencetimes with materials (i.e. encapsulation layers) that do not play activeroles in device operation. In this manner, transience time can beengineered in a manner that is independent of electrical function.

In Vivo Studies of Transience in an Implantable RF Metamaterial Antenna

To study transience in vivo, a metamaterial antenna was built withoverall dimensions ˜1.35 cm×1.35 cm (made of 400 nm Mg and coated with600 nm MgO as the protection layer), with a designed resonant frequencyat ˜1.8 GHz, on an untreated/water-dissolvable silk film (˜50 μm thick)encapsulated in a pocket-like container (of ˜2 cm×2 cm big and ˜100 μmthick on each side) of silk treated to be water insoluble and sealedalong the edges via hot embossing using a few silk drops as an adhesive.Upon implantation under the skin of a female albino Sprague-Dawley rat,this construction prevents direct contact between the device and thesurrounding tissues. Transience in this case is defined mainly bydiffusion of bio-fluids through edges of the silk pocket. The antennawas examined by measuring the resonant responses with a network analyzer(HP 8753D) before and after the encapsulation process and prior toimplantation. In vivo responses were recorded on day 0 (right after theimplantation), day 4, day 8 and day 15 (when the resonance of theantenna was barely detectable), as shown in FIG. 6c . The device wasretrieved thereafter, showing resorption into the tissue matrix withsigns of faint and disconnected Mg traces.

In Vitro Tests of Bacterial Inhibition Provided by a Transient, WirelessThermal Therapy Device

The devices were placed beneath a ˜3 mm thick agar plate loaded withEscherichia coli bacteria (ATCC 25922, American Type Culture Collection,Manassas Va.). The bacteria was reconstituted and expanded according tothe provided instructions, and the liquid cultures were grown for 18-24hours to an optical density (OD₆₀₀) of 0.8 (corresponding to a viablecount of ˜10⁷ CFU/mL). Three different device structures were separatelyexamined. The first two were controls, and consisted of Mg resistors andMg RF inductive coils, both in isolation. The third was the fullyfunctional device (i.e. Mg resistor connected to a Mg RF inductivecoil). In all three cases, wireless power was applied at 80 MHz by anexternal RF supply with a separately located primary coil (1 turn,diameter=5 cm, 12 AWG), at an input of ˜33 dBm (i.e. 2 watts). Thetemperature profile of the bacterial-loaded agar plate was monitored inreal time using a thermal camera (FLIR SC645, FLIR Inc.). The imagesshowed negligible heating in the cases of the control samples, andheating to ˜50° C. in the center of the plate (corresponding to theheater position) for the functional device. After ˜30 minutes ofheating, the agar plates were placed in a 37° C. incubator overnight toallow lawn growth. Visual inspection showed local absence of bacteria inthe heated region induced by the device, and no noticeable change forthe controls. The results are shown in FIG. 27.

Models of Dissolution

Single Layer (Silicon or Magnesium) Dissolution

Si may have a thin layer of native SiO₂ (a few nanometers thick). Itseffect on the dissolution of Si is accounted for via a model of doublelayer (SiO₂/Si) dissolution given in the next section. The reactionconstant and diffusivity for SiO₂ are obtained from the experiments forPE-CVD SiO₂ shown in FIG. 9 as k=1.5×10⁻⁶ s⁻¹, D=1.0×10⁻¹⁶ cm²/s at roomtemperature (FIG. 9b ) and k=3.0×10⁻⁶ s⁻¹ and D=2.0×10⁻¹⁶ cm²/s at bodytemperature (FIG. 9c )¹⁻³. The related AFM study is shown in FIG. 29.The results (e.g., the critical time for complete dissolution of Si)given by the model of double layer dissolution are the same as thatwithout the thin SiO₂ layer. This suggests that the effect of a thinSiO₂ layer is negligible.

The boundary conditions (FIG. 28a ) for the reactive diffusion Equation(1) are constant water concentration w|_(y=h) ₀ =w₀ at the water/Siinterface and zero water flux ∂w/∂y|_(y=0)=0 at the bottom surface ofSi. The initial condition is zero water concentration w|_(t=0)=0(0≤y<h₀). The solution was obtained by the method of separation ofvariables as

$\begin{matrix}{{w\left( {y,t} \right)} = {w_{0}{\left\{ {\frac{\cosh\frac{{ky}^{2}}{D}}{\cosh\frac{{kh}_{0}^{2}}{D}} + {2{\sum\limits_{n = 1}^{\infty}\;{\frac{\left( {- 1} \right)^{n}\left( {n - \frac{1}{2}} \right)\pi}{\frac{{kh}_{0}^{2}}{D} + {\left( {n - \frac{1}{2}} \right)^{2}\pi^{2}}}e^{\frac{- {Dt}}{h_{0}^{2}}{\lbrack{\frac{{kh}_{0}^{2}}{D} + {{({n - \frac{1}{2}})}^{2}\pi^{2}}}\rbrack}}{\cos\left\lbrack {\left( {n - \frac{1}{2}} \right)\pi\frac{y}{h_{0}}} \right\rbrack}}}}} \right\}.}}} & ({S1})\end{matrix}$Its product with the reaction constant k gives the mass of water in Si(per unit volume), which in turn gives the mass of dissolved Si (perunit volume) to be [kwM(Si)]/[4M(H₂O)] since four water molecules reactwith one Si atom. Its integration over both the thickness direction yand time t gives the net Si during dissolution as

$\begin{matrix}\begin{matrix}{\frac{h}{h_{0}} = {f\left( {\frac{Dt}{h_{0}^{2}},\frac{{kh}_{0}^{2}}{D},\frac{w_{0}}{\rho_{Si}}} \right)}} \\{= {1 - {\frac{w_{0}M\mspace{14mu}({Si})}{4\rho_{Si}M\mspace{14mu}\left( {H_{2}O} \right)}{{\frac{{kh}_{0}^{2}}{D}\left\lbrack {{\frac{Dt}{h_{0}^{2}} \cdot \frac{\tanh\sqrt{\frac{{kh}_{0}^{2}}{D}}}{\sqrt{\frac{{kh}_{0}^{2}}{D}}}} - {2{\sum\limits_{n = 1}^{\infty}\;\frac{1 - e^{- {\frac{Dt}{h_{0}^{2}}{\lbrack{\frac{{kh}_{0}^{2}}{D} + {{({n - \frac{1}{2}})}^{2}\pi^{2}}}\rbrack}}}}{\left\lbrack {\frac{{kh}_{0}^{2}}{D} + {\left( {n - \frac{1}{2}} \right)^{2}\pi^{2}}} \right\rbrack^{2}}}}} \right\rbrack}.}}}}\end{matrix} & ({S2})\end{matrix}$For k and D in the present study, the summation on the left hand side ofthe above equation is negligible, which leads to Eq. (1).

Equation (1) is modified for Mg since two water molecules react with one

$\begin{matrix}{{{Mg}\mspace{14mu}{atom}},{\frac{h}{h_{0}} = {1 - {\frac{w_{0}M\mspace{14mu}({Mg})}{2\rho_{Mg}M\mspace{14mu}\left( {H_{2}O} \right)}{\frac{{kh}_{0}^{2}}{D}\left\lbrack {{\frac{Dt}{h_{0}^{2}} \cdot \frac{\tanh\sqrt{\frac{{kh}_{0}^{2}}{D}}}{\sqrt{\frac{{kh}_{0}^{2}}{D}}}} - {2{\sum\limits_{n = 1}^{\infty}\;\frac{1 - e^{- {\frac{Dt}{h_{0}^{2}}{\lbrack{\frac{{kh}_{0}^{2}}{D} + {{({n - \frac{1}{2}})}^{2}\pi^{2}}}\rbrack}}}}{\left\lbrack {\frac{{kh}_{0}^{2}}{D} + {\left( {n - \frac{1}{2}} \right)^{2}\pi^{2}}} \right\rbrack^{2}}}}} \right\rbrack}}}},} & ({S3})\end{matrix}$where ρ_(mg)=1.738 g·cm⁻³ is the mass density of Mg. For Mg initialthickness h₀=300 nm and initial resistance (per unit length) R₀=1.06Ω/mm, the resistance (per unit length) R=R₀(h/h₀)⁻¹ in FIG. 4e agreeswell with the experiments for the reaction constant k=1.2×10⁻³ s⁻¹ anddiffusivity D=6.0×10⁻¹² cm²/s. Here k and D for Mg are much larger thanthose for Si because the water-Mg reaction is much faster (hours todissolve Mg versus weeks to dissolve Si). Equation (2) gives thecritical time for the complete dissolution of Mg t_(c)=38.4 min, whichagrees well with 40 min for open circuit in experiments.Double Layer (MgO/Mg) Dissolution

The local coordinate systems for the Mg and MgO layers, denoted bysubscripts 1 and 2, respectively, are shown in FIG. 28b . For Mg, thereactive diffusion equation with zero water flux condition at the bottomsurface and initial condition are

$\begin{matrix}\left\{ {\begin{matrix}{{{D_{1}\frac{\partial^{2}w_{1}}{\partial y_{1}^{2}}} - {k_{1}w_{1}}} = {\frac{\partial w_{1}}{\partial t}\mspace{14mu}\left( {0 \leq y_{1} \leq h_{1}} \right)}} \\{{\left. \frac{\partial w_{1}}{\partial y_{1}} \right|_{y_{1} = 0} = 0}\mspace{256mu}} \\{{\left. w_{1} \right|_{t = 0} = {0\mspace{14mu}\left( {0 \leq y_{1} \leq h_{1}} \right)}}\mspace{146mu}}\end{matrix}.} \right. & ({S4})\end{matrix}$For MgO, the governing equation with constant water concentration at thewater/MgO interface and initial condition are

$\begin{matrix}\left\{ {\begin{matrix}{{{D_{2}\frac{\partial^{2}w_{2}}{\partial y_{2}^{2}}} - {k_{2}w_{2}}} = {\frac{\partial w_{2}}{\partial t}\mspace{14mu}\left( {0 \leq y_{2} \leq h_{2}} \right)}} \\{{\left. w_{2} \right|_{y_{2} = 0} = w_{0}}\mspace{265mu}} \\{{\left. w_{2} \right|_{t = 0} = {0\mspace{14mu}\left( {0 \leq y_{2} \leq h_{2}} \right)}}\mspace{146mu}}\end{matrix}.} \right. & ({S5})\end{matrix}$The continuity of the concentration and flux of water molecules acrossthe MgO/Mg interface requires

$\left. w_{1} \right|_{y_{1} = h_{1}} = {\left. w_{2} \middle| {}_{y_{2} = h_{2}}\mspace{14mu}{{and}\mspace{14mu} D_{1}\frac{\partial w_{1}}{\partial y_{1}}} \right|_{y_{1} = h_{1}} = \left. {{- D_{2}}\frac{\partial w_{2}}{\partial y_{2}}} \middle| {}_{y_{2} = h_{2}}. \right.}$The solution of Eqs. (S4) and (S5) is obtained by the method ofseparation of variables as

$\begin{matrix}{\begin{matrix}{w_{1} = {{w_{0}\left( {{E\mspace{14mu}\cosh\sqrt{\frac{k_{1}y_{1}^{2}}{D_{1}}}} + {\sum\limits_{n = 1}^{\infty}\;{C_{n}e^{{- \lambda_{n}}t}\mspace{14mu}\sin\sqrt{\frac{\lambda_{n} - k_{2}}{D_{2}}h_{2}^{2}}\mspace{14mu}\cos\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}y_{1}^{2}}}}} \right)}\mspace{14mu}\left( {0 \leq y_{1} \leq h_{1}} \right)}} \\{w_{2} = {{w_{0}\left( {{F\mspace{14mu}\sinh\sqrt{\frac{k_{2}y_{2}^{2}}{D_{2}}}} + {\cosh\sqrt{\frac{k_{2}y_{2}^{2}}{D_{2}}}} + {\sum\limits_{n = 1}^{\infty}\;{C_{n}e^{{- \lambda_{n}}t}\mspace{14mu}\cos\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}h_{1}^{2}}\mspace{14mu}\sin\sqrt{\frac{\lambda_{n} - k_{2}}{D_{2}}y_{2}^{2}}}}} \right)}\mspace{14mu}\left( {0 \leq y_{2} \leq h_{2}} \right)}}\end{matrix},} & ({S6})\end{matrix}$where the constants E and F are given by

$\begin{matrix}{\begin{matrix}{E = \frac{1}{{\sqrt{\frac{D_{1}k_{1}}{D_{2}k_{2}}}\sinh\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}\sinh\sqrt{\frac{k_{2}h_{2}^{2}}{D_{2}}}} + {\cosh\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}\cosh\sqrt{\frac{k_{2}h_{2}^{2}}{D_{2}}}}}} \\{F = {- \frac{{\sqrt{\frac{D_{1}k_{1}}{D_{2}k_{2}}}\tanh\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}} + {\tanh\sqrt{\frac{k_{2}h_{2}^{2}}{D_{2}}}}}{{\sqrt{\frac{D_{1}k_{1}}{D_{2}k_{2}}}\tanh\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}\tanh\sqrt{\frac{k_{2}h_{2}^{2}}{D_{1}}}} + 1}}}\end{matrix},} & ({S7})\end{matrix}$the eigenvalue λ_(n) (n=1, 2, 3, . . . ) is determined from thefollowing equation

$\begin{matrix}{{{\tan\sqrt{\frac{\lambda - k_{1}}{D_{1}}h_{1}^{2}}\tan\sqrt{\frac{\lambda - k_{2}}{D_{2}}h_{2}^{2}}} = \sqrt{\frac{D_{2}}{D_{1}}\frac{\lambda - k_{2}}{\lambda - k_{1}}}},} & ({S8})\end{matrix}$and C_(n) is given by

$\begin{matrix}{C_{n} = {\frac{{- \frac{2}{\lambda_{n}}}\sqrt{\left( {\lambda_{n} - k_{2}} \right)D_{2}}\cos\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}h_{1}^{2}}}{{h_{1}\mspace{14mu}\sin^{2}{\sqrt{\frac{\lambda_{n} - k_{2}}{D_{2}}h_{2}^{2}}\left\lbrack {1 + \frac{\sin\left( {2\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}h_{1}^{2}}} \right)}{2\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}h_{1}^{2}}}} \right\rbrack}} + {h_{2}\mspace{14mu}\cos^{2}{\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}h_{1}^{2}}\left\lbrack {1 - \frac{\sin\left( {2\sqrt{\frac{\lambda_{n} - k_{2}}{D_{2}}h_{2}^{2}}} \right)}{2\sqrt{\frac{\lambda_{n} - k_{2}}{D_{2}}h_{2}^{2}}}} \right\rbrack}}}.}} & ({S9})\end{matrix}$The resistance R is given analytically by

$\begin{matrix}{R = {\frac{R_{0}}{1 - {\frac{k_{1}w_{0}M\mspace{14mu}({Mg})}{2\rho_{Mg}M\mspace{14mu}\left( {H_{2}O} \right)}\left\lbrack {{\frac{\sinh\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}}{\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}}{Et}} + {\sum\limits_{n = 1}^{\infty}\;{\frac{C_{n}}{\lambda_{n}}\left( {1 - e^{{- \lambda_{n}}t}} \right)\frac{\sin\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}h_{1}^{2}}}{\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}h_{1}^{2}}}\sin\sqrt{\frac{\lambda_{n} - k_{2}}{D_{2}}h_{2}^{2}}}}} \right\rbrack}}.}} & ({S10})\end{matrix}$The above resistance (per unit length) agrees well with experiments forthe thickness of MgO encapsulation of 400/800 nm, which has the initialresistance (per unit length) of 1.04/1.15 Ω/mm, respectively. Thereaction constant and diffusivity for MgO are k₂=5.0×10⁻⁴ s⁻¹ andD₂=4.9×10⁻¹³ cm²/s, while the values for Mg have been determined in FIG.4e as k₁=1.2×10⁻³ s⁻¹ and D₁=6.0×10⁻¹² cm²/s.

The critical time t_(c) for open circuit is reached when the resistancein Eq. (S10) approaches infinity, which gives

$\begin{matrix}{{{\frac{\sinh\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}}{\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}}{Et}_{c}} + {\sum\limits_{n = 1}^{\infty}\;{\frac{C_{n}}{\lambda_{n}}\left( {1 - e^{{- \lambda_{n}}t_{c}}} \right)\mspace{14mu}\sin\sqrt{\frac{\lambda_{n} - k_{2}}{D_{2}}h_{2}^{2}}\frac{\sin\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}h_{1}^{2}}}{\sqrt{\frac{\lambda_{n} - k_{1}}{D_{1}}h_{1}^{2}}}}}} = {\frac{2\rho_{Mg}M\mspace{14mu}\left( {H_{2}O} \right)}{k_{1}w_{0}M\mspace{14mu}({Mg})}.}} & ({S11})\end{matrix}$For reaction constants and diffusivities in the present study, thesummation on the left hand side of the above equation is negligible,which leads to

$\begin{matrix}{t_{c} = {\frac{2\rho_{Mg}M\mspace{14mu}\left( {H_{2}O} \right)}{k_{1}w_{0}{EM}\mspace{14mu}({Mg})}{\frac{\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}}{\sinh\sqrt{\frac{k_{1}h_{1}^{2}}{D_{1}}}}.}}} & ({S12})\end{matrix}$It gives the critical time of 3.5 and 13 hours for the thickness of MgOencapsulation of 400 and 800 nm, respectively, which agrees reasonablywell with experiments in FIG. 4 e.

Silk overcoats provide a barrier for water to diffuse into MgO/Mglayers, and the effective diffusion is controlled by the percentage ϕ ofthe maximum crystallinity c_(max) that can be achieved in the silk. Thecrystallinity of silk is then obtained as c=ϕ×c_(max). The boundarycondition of constant concentration at the water/MgO interface w₂|_(y) ₂₌₀=w₀ in Eq. (S5) is replaced by w₂|_(y) ₂ ₌₀=w₀ (1−ϕ). The resistancethen obtained for two silk overcoats agrees well with experiments for ϕof 45.0% and 89.8%, respectively, as shown in FIG. 4 e.

Models of Dissolution with Time-Dependent Reaction Rate Constants

In many cases, the reaction constants for the net reactions can decreaseas time elapses. When this reaction constant takes a general form ofk(t), the solution of equation of reactive diffusion is obtained as

$\begin{matrix}{{\frac{w}{w_{0}} = {\frac{\cosh\left\lbrack {\frac{y}{h_{0}}\sqrt{\frac{{k(t)}h_{0}^{2}}{D}}} \right\rbrack}{\cosh\sqrt{\frac{{k(t)}h_{0}^{2}}{D}}} + {\sum\limits_{n = 1}^{\infty}\;{\frac{2\left( {- 1} \right)^{n}}{\left( {n - \frac{1}{2}} \right)\pi}\left\{ {{e^{- {\int_{0}^{2}{{\chi_{n}{(\tau)}}{d\tau}}}}\left\lbrack {1 + {\int_{0}^{t}{{k(\eta)}e^{\int_{0}^{\eta}{{\chi_{n}{(\tau)}}{d\tau}}}d\;\eta}}} \right\rbrack} - \frac{k(t)}{\chi_{n}(t)}} \right\}{\cos\left\lbrack {\left( {n - \frac{1}{2}} \right)\pi\frac{y}{h_{0}}} \right\rbrack}}}}},} & ({S13})\end{matrix}$where χ_(n)(t)=k(t)+(2n−1)²π²D/(4h₀ ²). For small k(t)h₀ ²/D, as inexperiments, the above solution can be simplified to

$\begin{matrix}{\frac{w}{w_{0}} \approx {1 + {\frac{1}{2}\frac{{k(t)}h_{0}^{2}}{D}{\left( {\frac{y^{2}}{h_{0}^{2}} - 1} \right).}}}} & ({S14})\end{matrix}$Similar to Eq. (S2), the thickness of a Si NM can be obtained as

$\begin{matrix}{\frac{h}{h_{0}} = {1 - {\alpha{\int_{0}^{t}{\left\lbrack {{k(t)} - {\frac{1}{3}\frac{{k^{2}(t)}h_{0}^{2}}{D}}} \right\rbrack{{dt}.}}}}}} & ({S15})\end{matrix}$For the reaction constant to be exponential decay as k(t)=k₀e^(−t/τ)leads to the normalized thickness of Si NM

$\begin{matrix}{\frac{h}{h_{0}} = {1 - {{\alpha\tau}\;{{k_{0}\left\lbrack {1 - \frac{k_{0}h_{0}^{2}}{6D} - e^{{- t}\text{/}\tau} + {\frac{k_{0}h_{0}^{2}}{6D}e^{{- 2}t\text{/}\tau}}} \right\rbrack}.}}}} & ({S16})\end{matrix}$For k₀=7.9×10⁻⁶ s⁻¹ and τ=23 day, FIG. 30 shows a good agreement betweenpredictions from Eq. (S16) and experimental measurements. Compared tothe reaction constant k of 5.0×10⁻⁶ s⁻¹ chosen to be independent of thetime, the parameters of k(t) are reasonable because k is between theinitial reaction constant k₀ and the reaction constant of 3.3×10⁻⁶ s⁻¹at day 20.Models for In Vivo Transience of an Implantable RF Metamaterial Antenna

The Q factor is related to the inductive reactance X_(L) and resistanceR_(L) of inductors by Q=X_(L)/R_(L). Neglecting small changes in X_(L),the Q factor normalized by its initial value can be readily obtainedfrom the thickness of the inductors and the model of double layerdissolution, with crystallinity of/97.0c_(max) %.

References

-   [1] Tomozawa, M. & Davis, K. M. Time dependent diffusion coefficient    of water into silica glass at low temperatures. Mater. Sci. Eng. A    272, 114-119 (1999).-   [2] Rimstidt, J. D. & Barnes, H. L. The kinetics of silica-water    reactions. Geochim. Cosmochim. Ac. 44, 1683-1699 (1980).-   [3] Morita, M., Ohmi, T., Hasegawa, E., Kawakami, M. & Ohwada, M.    Growth of native oxide on a silicon surface. J. Appl. Phys. 68,    1272-1281 (1990).

EXAMPLE 3

Recent work by the inventors establishes a new, silicon-basedelectronics technology that can, in a controlled manner, graduallyvanish over time[1]. Devices that are ‘transient’ in this sense createapplication possibilities that cannot be addressed with conventionalelectronics, such as active implants that exist for medically usefultimeframes, but then completely dissolve and disappear via resorption bythe body, or field-deployable beacons that disappear to avoid recovery.The inventors have demonstrated a set of materials, components,theoretical design tools and manufacturing approaches for acomplementary metal oxide semiconductor (CMOS) electronics of this type,together with different classes of sensors and actuators, options forpower supply and a wireless control strategy. A transient silicon devicecapable of delivering thermal therapy in an implantable mode to addresschallenges in surgical site infections caused by antibiotic-resistantbacteria and its demonstration in animal models illustrate asystem-level example of this technology [1]. Fully transient RFscavenging devices, and partially transient radio transmitters prove theability to realize basic building blocks of relevance to many militaryapplications [2].

The transient electronics technology base described above lacks twocritical capabilities: (1) routes to piezoelectric and optoelectroniccomponents, and (2) low power schemes for programmed, or ‘triggered’,transience. The present devices address these two issues. For the first,ZnO is used as a water soluble semiconductor, in which hydrolysisaffects transience. The large, direct bandgap and strong piezoelectricresponse of ZnO make it a useful complement to Si, for applications inmechanical energy harvesters, light emitting diodes and transparentconductors. Previous studies demonstrate that ZnO is water soluble [3,4]and biocompatible [5], and that it can be used in a variety ofsemiconductor devices. FIG. 31 shows scanning electron micrographs of aZnO nanorod collected at various times during water dissolution [adaptedfrom 3]. The present example focuses on integration of ZnO with otherwater-soluble materials (e.g. Mg, MgO, Si, SiO₂, silk) to yieldcomponents that are fully transient.

Two components are pursued. The first is a thin film transistor (TFT).Past work has demonstrated transparent TFTs, using ZnO deposited in oneof three ways: molecular beam epitaxy, sputtering, and sol-gel/solutionmethods. The electrical and semiconducting properties of ZnO (mobility,resistivity, carrier concentration etc.) depend on the microstructure,especially grain size [6]. Grain size can be engineered by deposition atan elevated temperature [7], through grain growth during an annealingprocess [8,9], or by adjusting sputtering pressure [10,11]. Theannealing process can also aid in dopant activation [12]. Electricalproperties can also be adjusted by adding O₂ during sputtering [13],though TFTs can still be fabricated by sputtering in Ar only.

Flexible ZnO TFTs can be formed on plastic substrates by sputtering atroom temperature followed by low temperature annealing, or no annealingat all [14,15]. Both top gate and bottom gate TFTs of this type arepossible, although latter designs are more common [13]. Exploiting thislayout provides a highly doped, transfer printed silicon nanomembrane asthe gate electrode, and a layer of SiO₂ deposited by PECVD as the gatedielectric. Low temperature sputtering of ZnO without annealing formsthe channel, and Mg source and drain electrodes are deposited usingmethods developed for transient silicon devices. Typical etching methodsfor patterning ZnO are incompatible with silk, but two strategies avoidthis constraint: (1) all additive processing, directly on silk, usingprecision shadow masks, and (2) complete fabrication on siliconsubstrates, in releasable formats that are compatible with transferprinting to silk, as a final step.

Electrical properties are measured before and during transience due toimmersion in water. The properties of ZnO TFTs reported in theliterature vary widely. On/off ratios are generally between 10³ and 10⁵.Device mobilities are highly dependent on microstructure, channelgeometry, and processing conditions. Reported values lie between 0.02cm²/(V s) and 4 cm²/(V s). Because development of transient ZnO devicesinvolves many new challenges, targets for performance of the presentdevices lie between bounding values reported for non-transient versions:10³ for on/off ratio and 0.1 cm²/(V s) for mobility.

The second class of device described here is a mechanical energyharvesting component that exploits previous work on ZnO as anenvironmentally friendly alternative to PZT. Strain sensors and energyharvesting devices based on ZnO often use nanostructures (i.e.nanowires) to achieve improved integration with flexible substrates[16]. The present techniques for realizing similar mechanics with thinfilms offer more scalable routes to high performance, with reducedcomplexity and improved compatibility with established thin film devicearchitectures and processing approaches.

ZnO films have been used as pressure sensors on PI [17] and ascantilevered microgenerators on PET [18]. The microgenerator involves aZnO layer between two metal contacts, which in the present case areformed using Mg. Targets for performance include open circuit voltagesof ˜1 V and total output powers of 0.25 □W, consistent with ranges forZnO thin film devices in non-transient forms reported in the literature.As with the TFTs, device characteristics are measured and the transientbehaviors explored.

For triggered transience in these and other systems, the inventorsexplore two different schemes (1) electrically or optically inducedthermocapillary effects which, when implemented at the nanoscale,provide a low power means to induce flows in thin films, and (2)enzymatically induced degradation of silk. In the first approach, thetemperature dependence in the surface tension and wettingcharacteristics lead to mass transport at rates and along directionsdefined by temperature gradients (rather than changes in temperature).Such phenomena have been used previously to move liquid droplets onsurfaces, in a programmed manner in which thermal gradients as small asa few degrees per millimeter are sufficient [19].

Recent work by the inventors shows that this same physics can enablemeaningful flows in thin films of molecular glasses, at temperaturegradients of a few degrees per micron. FIG. 32 shows atomic forcemicrographs of selective, thermocapillary flows in a thin film of amolecular glass (Mg₂OH) on an array of carbon nanotubes. Selective Jouleheating in the metallic tubes induces thermocapillary flows in theoverlying glass, at low temperatures with gradients of a few degrees permicron. In strategic layouts, implemented with narrow electrodes thatprovide local Joule heating, such flows can be designed to induceelectrical openings in conducting traces. The result can alter oreliminate function in an integrated circuit, for example. Alternatively,these flows can expose underlying materials to a surrounding environmentthat affects transience in the overall system.

The fundamental mechanisms of this process are important to establishinga clear engineering design approach for its use in triggered transience.FIG. 33 shows a schematic diagram of an initial model that can capturethe essential physics. Here, local heating of a film reduces the surfacetension □, which for most materials is linear with respect to the localtemperature T. The non-uniform temperature produces a thermocapillaryshear stress □ proportional to the gradient of surface tension, whichpulls liquid or viscous solid toward regions of cooler surfacetemperature. The governing equation derived from the Navier-Stokesequation is

${{\frac{\partial h}{\partial t} + {\frac{\partial}{\partial x}\left\lbrack {\frac{\tau\; h^{2}}{2\mu} + {\frac{h^{3}}{3\mu}\frac{\partial}{\partial x}\left( {\gamma{\nabla^{2}h}} \right)}} \right\rbrack}} = 0},$where h(x, y,t) is the position and temperature dependent thickness ofliquid or viscous film, t is time, and □ is the shear viscosity. Thisequation, together with the appropriate initial and boundary conditions,can be solved numerically to determine the time-dependent filmthickness, which is critical to the triggered transience. An analyticalsolution will also be established for the long-time behavior, which canprovide scaling laws, useful for engineering design. For example, it canbe shown that the heat power Q₀, thermal conductivity k_(f) and initialthickness H_(f) of the film, ambient temperature T₀, and coefficients □₀and □₁ in surface tension (□=□₀+□₁T) appear in a single combination

$\frac{Q_{0}}{k_{f}{H_{f}\left( {{\gamma_{0}\text{/}\gamma_{1}} + T_{0}} \right)}}$to control the process.

In additional to Joule heating, optically induced heating in silk dopedwith gold nanoparticles is explored, in forms ranging from conformalcoatings [20] to bulk films [21] to 3D photonic crystals [22]. In thesematerials, plasmonic-resonances enhance the absorption of light, in waysthat can affect the bulk material (through heat-induced modification ofthe silk crystalline matrix) and the interfaces between doped silksubstrates and devices. The latter provides a route to triggering devicedisintegration with light. Heat localization can be obtained byselective doping of different areas or different layer(s) and/orfocusing of incident light.

Selection of dopants: Both semiconductors (such as CdSe and CdTe) andmetals (such as Au and Ag) are candidates for dopants. Metals withstrong plasmonic resonances are preferred. Gold is widely used forphoto-thermal applications and is a good choice for implantationapplications due to its biocompatibility. Silver nanoparticles, however,generate much more heat (10 times higher) than gold nanoparticles due tostronger plasmon resonances, and therefore might be a good option fornon-implantable applications (for example, skin mounted devices).

Shape and wavelength: Solid spherical nanoparticles (NPs) show plasmonresonances, for Ag-NPs and Au-NPs, that lie at ˜400 nm and 530 nm,respectively, for representative sizes, with wavelengths that shift withsize in predictable ways. For example, for implantable applications, itis possible to shift the plasmon resonance to the red (650-900 nm), totake advantage of the low tissue absorption and the associated improvedpenetration.

For non-implantable applications, either Ag- or Au-NPs can be used toremotely generate heat with blue or green light. The generated heat Q,and local temperature increase ΔT can be analytically calculated by thefollowing equations:

$\begin{matrix}{Q = \left. {\frac{\omega}{8\pi}E_{0}^{2}} \middle| \frac{3ɛ_{0}}{{2ɛ_{0}} + ɛ_{NP}} \middle| {}_{2}{{Im}\left( ɛ_{NP} \right)} \right.} & (1)\end{matrix}$where E₀ is the amplitude of the incident radiation, and ε_(NP) and ε₀are the dielectric constants of the NP and surrounding medium,respectively.

$\begin{matrix}{{\Delta\;{T(r)}} = \frac{V_{NP}Q}{4\pi\; k_{0}r}} & (2)\end{matrix}$where r is the distance from the center of a NP, k₀ is the thermalconductivity of the surrounding medium, and V_(NP) is the NP volume.

By combining (1) and (2), it is possible to show that the maximumtemperature increase is given by (occurs at r=R_(NP), surface of theNP):

$\begin{matrix}{{\Delta\;{T_{\max}\left( I_{0} \right)}} = \left. {\frac{R_{NP}^{2}}{3k_{0}}\frac{\omega}{8\pi}} \middle| \frac{3ɛ_{0}}{{2ɛ_{0}} + ɛ_{NP}} \middle| {}_{2}{{{Im}\left( ɛ_{NP} \right)}\frac{8{\pi \cdot I_{0}}}{c\sqrt{ɛ_{0}}}} \right.} & (3)\end{matrix}$where I₀ is the light intensity, and the temperature increase isproportional to the second power of the NP radius, i.e. ΔT_(max)∝R_(NP)², when the NP radius is much smaller than the incident wavelength. Forinstance, a portable laser pointer with an output power of 15 mW at ˜532nm and a spot size of ˜1 mm (without focusing) corresponds to a lightflux of I₀=1.91 W/cm².

TABLE 1 Estimated values for generated power and temperature increasewith some commercial Au NPs in aqueous media. Particle sizeConcentration Molar Particle Temperature (nm) (particles per mL)Concentration (nM) Increase (° C.) 5   5 × 10¹³ 83.3 62.18 10 5.7 × 10¹²9.5 28.36 15.2^(★) 1.4 × 10¹² 2.3 15.67 20.3   7 × 10¹¹ 1.15 13.93 30.7  2 × 10¹¹ 0.33 8.96 40.3   9 × 10¹⁰ 0.15 7.16 59.4 2.6 × 10¹⁰ 0.0434.66 100 5.6 × 10⁹  0.0093 2.79 ★Au-NPs produced and used for Au-NPsdoped silk experiments.

The most straightforward way to transience via silk is to physicallyalter the silk film on which the electronic/metal components are built.Based on previous work on laser machining/cutting of silk, the requiredtemperatures are ˜200° C. The inventors successfully machined asilk+AuNP film with a focused laser pointer with an output of 10 mW.With thermocapillary effects, it is possible to alter dissolvablematerials such as Mg, MgO, Si, SiO2 with temperature increases of just afew degrees. These values can be achieved assuming a NP doped silkdevice (7×10¹² particles per mL, concentrated from 1.4×10¹² particlesper mL, with a diameter of ˜15 nm by centrifuge) and a laser pointer of˜50 mW (beam diameter: ˜1 mm), which corresponds to a light flux of 6.4W/cm². Ignoring beam divergence, the local temperature increase isestimated to be 200° C., which should be sufficient to break down thedevice. Besides altering the NP concentration, silk films could beimprinted with microlens arrays to increase the fluence and acceleratetransience. Triggering degradation from a standoff position byilluminating with a laser at a distance might also be possible. FIG. 34shows, from left-to-right, absorption spectra in Au-NP silk solutionsand images of bulk samples for different AuNP concentrations, a thermalimage of a AuNP-silk film (2 □m thick) spin-cast on a glass slide whenilluminated by a green (532 nm) laser pointer, and a correspondingmeasured thermal profile (data acquired with a FLIR SC-600 thermalimager).

In addition to thermal mechanisms, biological modifications to triggertransience are explored. Specifically, modifications of silk to inducerapid loss of silk material integrity, upon exposure to (1)saliva—protease activated digestion and (2) ambient light andtemperature activated digestion, and other potential mechanisms such aschanges in pH, salt, electric fields, pressure are mentioned. In allcases, the schemes involve silk micro/nanoparticles, fibers, sponges,gels or other components as building blocks for functional silkmaterials. These pieces are surface functionalized with silk-bindingpeptides or with silk-elastin copolymers binding peptides that also havea linker (trigger) domain (susceptible to environmental inputs astriggers). The silk pieces coated with these ‘linkers’ provide the sitesin the materials (weak links or susceptible links) for rapid activation,resulting in the rapid loss of the bulk material integrity. This couldoccur, for example, in two ways: (a) by bridging the silk pieces withtrifunctional linkers that self-assemble, coat, and bridge thecomponents (e.g, two silk binding domains for binding and to bridge thesusceptible linker); or (b) by using silk-elastin block copolymers todrive transitions from environmental triggers. Certain aspects of thesestrategies have been shown to work, such as materials fabrication frombuilding blocks and bifunctional linker designs. This work focuses onoptimization for kinetics to control the rate of material dissolutiondepending on the environment inputs.

The component designs may involve complex structures formed usingmolding approaches such as those used in recent microneedle studies.(FIG. 35 shows microneedles in silk and an inset showing microvesicilesmolded into the needles to load additional drug doses.) Alternatively,particles can be generated by milling or via phase separation,sonication (energy), lipid templates and other modes. Gels can be formedvia pH, electric field or related techniques. Microfibers can begenerated by selective chemical digestion of native silk fibers. All ofthese building blocks or pieces can be considered as material substratesneeded for the present transient devices.

As an approach to functionalization, silk block copolymer systems, andextensions to triblock designs (e.g., silk-linker-silk), are exploited.The bifunctional linkers promote particle-to-particle binding to holdthe system together. The linker (trigger) domain in the center caninclude a peptide selective to salivary proteases, to promote the rapidloss of material integrity upon exposure to saliva. Diblock systemsfunction in many formats and can be used to self-assemble coatings onsilk materials, and matrix metalloproteinase (MMP) sensitive linkershave been designed into silk. In another approach, silk-elastincopolymers can be used as the linkers to provide an extended set ofpossible triggers. First, temperature-driven triggers—e.g., phase changeof the materials from extended to contracted forms upon a change intemperature (e.g., inverse temperature transition) can be generated. Anexample is to control transitions based on changes in temperature. Thedesign of these types of peptides can be extended to respond to a rangeof temperature, so that the material undergoes a change in structureupon reaching a critical temperature (this can be programmed to drivethe transition at a temperature near freezing to a temperature nearboiling) dictated by the amino acids sequence substitutions in theelastin block. Further, such designs can be extended to an array ofenvironmental inputs that will trigger a change in material structure,from pH, salt, pressure, electric fields and others (Table 2). Sincethese transitions can also result in compaction of the material (e.g.,reduction in size), such changes are coupled with the rapid release ofsequestered digestive enzymes (e.g., triggered release of protease XIVor chymotrypsin).

TABLE 2 Silk block (GAGAGS)₂ Elastin block (GVGVP)₄(GXGVP)(GVGVP)₃ XStimuli Any amino acids except proline Temperature, ionic strengthGlutamate, Lysine pH Cysteine, Methionine Redox Tyrosine, Phenylalanine& Trptophan Pressure Lysine (NMeN) Reduction-oxidation_(L)-3,4-dihydroxyphenylalanine Adhesive _(L)-p-phenylazo-phenylalanineLight RGYSLG Phospho/dephosphorylation

The largest challenge is accessibility of the linker sites onceassembled into a bulk silk material. This feature must be determined, tocontrol the kinetics of dissolution or compaction/release. With a rangeof processing controls, as well as possible additions of bulk peptidesin these linker sites, this challenge can be addressed. Using thesetools, modified silk solutions are prepared and silk films are generatedthat can be dissolved upon exposure to salivary proteases, and that areotherwise stable (undissolvable in water, for instance). FIG. 36 showsan example of printed silk doped with enzymes (HRP). Exposure to TMBcauses the peroxidase to undergo a colorimetric reaction and reveal aprinted pattern.

Additionally, the ability to silk inks with a commercial inkjet printer(Fuji Dimatix) has been demonstrated. Commercial inkjet printers and/ormicronozzle high-resolution inkjet printing systems can be used tomanufacture AuNP-silk patterns on the micro- and nanoscale. The printedpatterns are illuminated and thermally monitored, suitable forinterfacing to transient metals and oxides. The goal is to definemicron- and sub-micron scale heating patterns that act as local triggerpoints for degradation upon exposure to a light source of theappropriate wavelength and appropriate power. These results serve as thetechnical underpinning for different types of functional transientsubstrates based on dopants beyond Au-NP, such as nanoshells, quantumdots, nanotubes, enzymes, functionalized/modified silks, etc.

References

-   1. S.-W. Hwang et al, “A Physically Transient Form of Silicon    Electronics, With Integrated Sensors, Actuators and Power Supply,”    submitted.-   2. J. A. Rogers, F. Omenetto, Y. Huang et al, unpublished.-   3. J. Zhou et al, Adv. Mater. 18, 2432-2435 (2006).-   4. J. Han et al, J. Hazard. Mater. 178, 115-122 (2010).-   5. Z. Li et al, J. Phys. Chem. C 112, 20114-20117 (2008).-   6. Hwang, B-. I. et al, Appl. Phys. Lett. 93, 222104 (2008)-   7. Hao, X-. T. et al, Mater. Sci. Eng. B. 90 50-54 (2002).-   8. Hiramatsu, T. et al, Jpn. J. Appl. Phys. 46, 3319-3323 (2007).-   9. Park, C. J. et al, J. Kor. Phys. Soc. 55, 1925-1930 (2009).-   10. Lee, J-. H. J. Electroceram. 23, 512-518 (2009).-   11. Medina-Montes, M. I. et al, J. Electr. Mater. 40, 1461-1469    (2011).-   12. Cheng, Y-. C. Appl. Surf. Sci. 258, 604-607 (2011).-   13. Zhang, X. et al, J. Mater. Sci.: Mater. Electron. 21, 671-675    (2010).-   14. Banerjee, A. N. et al, Thin Solid Films 496 112-116 (2006).-   15. Jeon, H. et al, J. Kor. Phys. Soc. 51, 1999-2003 (2007).-   16. Zhou, J. et al, Nano Lett. 8, 3035-3040 (2008).-   17. Kuoni, A. et al, J. Micromech. Microeng. 13, S103-S107 (2003).-   18. Pan, C. T. et al, Sens. Act. A: Phys. 159, 96-104 (2010).-   19. A. A. Darhuber et al, Appl. Phys. Lett. 82, 657-659 (2003).-   20. Hu Tao et al. “Silk thermoelectric chips”, Applied Physics    Letters, 97 (12), 123702, 2010-   21. Hu Tao et al., “Implantable Multifunctional Biocompatible    Optics,” in review-   22. S. Kim et al., “Silk opals”, in review

EXAMPLE 4

Materials for Transient Electronics. Materials are clearly essentialcomponents of a degradable electronics technology, as are degradationtimes that span a desired range, e.g. between minutes to months. Theindividual materials as well as their collective integration intodevices and circuits define the overall degradation times. For example,even though Mg films with ˜0.5 mm thicknesses undergo completehydrolysis at room temperature in a few tens of minutes, Mg tracescoated with highly crystalline silk require much longer times. Thisexample outlines materials and layer architectures that provide desiredbehaviors.

Transient Conductors. Mg is used as a starting point because Mg has beenused as a structural material for resorbable intravascular stents.Alloys of Mg, for which small quantities (general ≤10% by weight) Al,Ag, Ca, Li, Mn, Si, Sn, Y, Zn, Zr, and rare earth elements [2] yield,mostly ternary systems. The electrical properties and the resorptionrates of these alloys are explored. For instance, in one studiedexample, magnesium-aluminum-zinc alloys have bulk resistivities almostdouble that of pure Mg (with 3% aluminum, 1% zinc), but both the bulkand thin film dissolution rates are significantly slower (by as much as4 times at physiologically and environmentally relevant ranges of pH).In general, higher aluminum concentrations slow the bulk degradationrate (e.g. AZ61 or AZ91). Slow resorption can be particularly importantfor device classes that demand continuous contact between electrodes inresorbable system with biological systems (e.g. bio-resorbableelectrophysiological monitors) or an aqueous sensing environments (e.g.eco-resorbable sensors). For such purposes, W is of interest due to itsprevious use in resorbable embolization coils. Here, W exhibitsresorption rates (to form tungstic acid, as a result of hydrolysis) thatare much lower than those of Mg or its alloys, as shown in publishedstudies in FIG. 37. FIG. 37 shows in vitro degradation of tungstenembolization coils [7]. FIG. 38 shows serum tungsten levels in rabbitswith implanted embolization coils [6]. In vivo studies of W embolizationcoils indicate increased levels of serum tungsten during resorption butwithout any adverse biological response [6]. The bulk resistivity of Wis very similar to Mg (5×10-8 Ωm vs 4.4×10-8 Ωm). Combinations of W, forexample as capping layers, with Mg form additional engineering designoptions.

A third metal is Fe, which has, like Mg, received interest as abiodegradable material for stents. Iron resorbs in water by firstoxidizing and then dissolving to either Fe²⁺ or Fe³⁺, depending on thepH. In vitro testing indicates degradation rates in Fe that are muchlower than those for Mg. On the other hand, in vivo degradation ratesare much lower than the rates predicted by in vitro studies [8]. Thisdifference has been attributed to passivation of the iron surface bysome insoluble compound, such as iron phosphide which could form fromreaction with phosphate ions in the body. Combinations of Mg, Mg alloys,W and Fe may provide the necessary capabilities for conductors indegradable electronics.

Transient Dielectrics. For gate dielectrics in MOSFETs and interlayerdielectrics in integrated circuits, SiO₂ and MgO have strong potentialto satisfy all requirements, as shown by studies of degradation ratesand kinetics in these systems, with comparisons to modeling. Thesematerials in single layers, or in multilayer configurations with metalssuch as W and bio-organic polymers such as silk, can be used asencapsulants to control overall resorption rates. Water permeation ratesfor different stack designs are measured.

Magnesium Alloys. Magnesium alloys are being researched solutions to thetwo perceived flaws with pure magnesium stents: poor mechanical strengthand rapid loss of that strength due to fast corrosion [1]. Magnesiumalloys come in many different varieties, though all have several traitsin common. Alloying elements are added in small quantities (general ≲10%by weight), most alloys are ternary, and none have been evaluated ontheir electrical properties. Tested elements include: Al, Ag, Ca, Li,Mn, Si, Sn, Y, Zn, Zr, and rare earth elements [2].Magnesium-aluminum-zinc alloys are some of the more common alloysstudied.

The bulk resistivity of AZ31B (3% aluminum, 1% zinc) is almost doublethat of pure magnesium, but both the bulk and thin film dissolutionrates are significantly slower. Higher aluminum concentrations slow thebulk degradation rate (e.g. AZ61 or AZ91). FIG. 39 shows hydrogenevolution (as a measure of degradation) during degradation of variousbinary magnesium alloys [3]. FIG. 40 shows comparisons of corrosionrates for Mg and Zn alloys at different pH [4].

Tungsten. Tungsten is usually overlooked for biomedical implantapplications in favor of titanium and other lightweight metals. However,tungsten is still used as one possible material choice for anembolization coil. As an embolization coil, tungsten has proven to bedegradable and the degradation rate is much slower than that ofmagnesium, for similar volumes of material. Tungsten is eventuallyconverted into tungstic acid.

Tungsten is naturally present in humans in small quantities (<200 ng/mL)[5]. Serum tungsten levels have been monitored in vivo, in animals andhumans, as tungsten embolization coils degrade; though the levels ofserum tungsten increased dramatically, no biological response and noinflammatory response were detected at the site of implantation [6].However, tungstic acid has been identified as an epileptogenic material,only when applied directly to the brain.

The electrical properties of tungsten compare favorably to magnesium.The bulk resistivity of tungsten is very similar to magnesium (5×10⁻⁸ Ωmvs 4.4×10⁻⁸ Ωm), so replacing or capping magnesium with small amounts oftungsten should not significantly impact device performance. FIG. 37shows in vitro degradation of tungsten embolization coils. FIG. 38 showsserum tungsten levels in rabbits with implanted embolization coils.

Iron. Like magnesium, iron has also received interest as a biodegradablestent material. The structural properties of iron exceed those ofmagnesium, and are much closer to SS316, the non-degradable standard instents. Iron degrades by first oxidizing, then dissolving to either Fe²⁺or Fe³⁺ by reacting with water, where the ion formed depends on the pHof the environment. Iron is extremely common within the body, and isimportant for many biological processes. In vitro testing has showndegradation rates that are slower than magnesium. However, in vivodegradation rates far exceed the rates predicted by in vitro studies[8]. This has been attributed to passivation of the iron surface by somecompound other than iron oxide. Iron phosphide is one possiblecandidate; phosphate ions are readily present in the body, and ironphosphide is insoluble in water, which may explain the dramaticallyreduced degradation rate. FIG. 41 shows degradation rate [8] andsolution iron concentration [9] during in vitro degradation tests ofiron (Fe). FIG. 42 shows accumulation of iron in the electrolyte inrelation to time.

Collagen/Gelatin. The triple helix structure of collagen gives it itsstrength and chemical resistance. As a protein, collagen sharescharacteristics with silk fibroin. Collagen degrades enzymatically intogelatin and shorter strands. Collagenase separates the three strands andbreaks them into pieces. Gelatinase and other protein-dissolving enzymescan become involved as the fragments get smaller and smaller [10].

Collagen is generally only soluble in strongly acidic or basicsolutions, and only in small amounts. This chemical resistance shouldmake it more tolerable to standard processing, but two critical flawsemerge when photolithography is involved. First, the surface roughnessof manufactured collagen films is quite high, making spin-coatingphotoresist difficult. Furthermore, collagen films will deform at hightemperatures as bound water molecules are driven off. Also, collagenwill attempt to swell in some photoresist developers (TMAH based, highlybasic). Separating the collagen from the developer by an insulatingoxide layer is impossible due to the surface roughness of the films. Asa result, gelatin is a more likely candidate for a substrate material,though its overall lifetime will greatly decrease.

Gelatin can be easily dissolved, spin cast, and blended with otherpolymers. Like collagen, gelatin is insoluble in acetone, and glassygelatin (dried so all bound water is evaporated) is stable up to 200° C.However, like collagen, gelatin is susceptible to swelling in basicsolutions, such as TMAH. Gelatin can be partially protected by an oxidelayer with some success, but the low temperature deposition may limitthe oxide layer to a low quality and ultimately ineffective protectivelayer.

Polyvinyl Alcohol (PVA). Its degradable nature has been leveraged foreco-friendly product packaging, and its high dielectric constant(ε_(r)˜10) has made it an often used gate dielectric material fororganic electronics [11]. However, PVA's properties are highly dependenton water content, which can be influenced by humidity and otherenvironmental changes. It is also highly permeable to water. Theseinstabilities have limited its use as an effective packaging material,and other polymers (like PLGA) are chosen over PVA as substratematerials for organic electronics.

Poly(lactic-co-glycolic acid) (PLGA). PLGA is a commonly used polymerwhere biodegradation is important or necessary. Its versatility allowsfor many different applications, from nanoparticle drug delivery tobiodegradable stents and stent coatings. The properties of PLGA can bevaried by changing molecular weight and the ratio of lactic acid toglycolic acid. PLGA dissolves slowly in water, and fairly quickly insolvents like acetone. The acetone solubility makes it an ineffectivesubstrate for liftoff-based photolithography. In addition, magnesiumfilms evaporated onto PLGA diffuse into or are dissolved by PLGA withinminutes; this phenomenon is not observed when a titanium adhesion layeris used.

Previous work [11] using PLGA substrates use active cooling duringdeposition and non-reactive metals (silver or gold). FIG. 43 provideschemical structures, device geometry, and degradation tests of PVA andPLGA [11]. It is not known if other biodegradable metals will experiencesimilar degradation when deposited directly onto PLGA, thoughcomplexation between PLGA and magnesium [12] and zinc oxide [13] suggestthat this phenomenon is expected for similarly reactive metals.

References

-   1. Guangling Song. Corrosion Science. 49 (2007) 1696-1701-   2. Frank Witte, Norbert Hort, Carla Vogt, Smadar Cohen, Karl Ulrich    Kainer, Regine Willumeit, and Frank Feyerabend. Current Opinion in    Solid State and Materials Science. 12 (2008) 63-72-   3. X. N. Gu, Y. F. Zheng, Y. Cheng, S. P. Zhong, T. F. Xi.    Biomaterials. 30 (2009) 484-498-   4. D. Vojtech, J. Kubasek, J. Serak, P. Novak. Acta Biomaterialia.    7 (2011) 3515-3522-   5. T. J. Butler, R. W. Jackson, J. Y. Robson, R. J. T. Owen, H. T.    Delves, C. E. Sieniawska, and J. D. G. Rose. The British Journal of    Radiology. 73 (2000) 601-603-   6. Matthias Peuster, Christoph Fink, Peter Wohlsein, Michael    Brugmann, Alexander Gunther, Volker Kaese, Matthias Niemeyer, Heinz    Haferkamp, and Christian v. Schnakenburg. Biomaterials 24 (2003)    393-399-   7. Matthias Peuster, Christoph Fink, Christian von Schnakenburg.    Biomaterials 24 (2003) 4057-4061-   8. Shengfa Zhu, Nan Huang, Li Xu, Yu Zhang, Hengquan Liu, Hong Sun,    and Yongxiang Leng. Materials Science and Engineering C. 29 (2009)    1589-1592-   9. Matthias Peuster, Peter Wohlsein, Michael Brugmann, M.    Ehlerding, K. Seidler, Christoph Fink, H. Brauer, A. Fischer, and G.    Hausdorf. Heart. 86 (2001) 563-569-   10. Magda Gioia, Susanna Monaco, Giovanni Francesco Fasciglione,    Anna Coletti, Andrea Modesti, Stefano Marini, and Massimo    Coletta. J. Mol. Biol. 368 (2007) 1101-1113-   11. Christopher J. Bettinger and Zhenan Bao. Adv. Mater. 22 (2010)    651-   12. Juha Piispanen and Lauri H. J. Lajunen. Acta Chemica    Scandinavica. 49 (1995) 235-240-   13. Yutaka Yamagata, Masafumi Misaki, Tomofumi Kurokawa, Keiko    Taira, Shigeyuki Takada. International Journal of Pharmaceutics.    251 (2003) 133-141

EXAMPLE 5

Manufacturing. Low cost manufacturing is an essential requirement for arealistic degradable electronics technology, due to the intrinsicallyfinite operational (and physical) lifetimes. Processes used in thesemiconductor industry are not applicable because many degradablematerials are incompatible with established solvents, photoresists,developers, exposure techniques and etching methods. A manufacturingstrategy developed here involves two main steps (1) transfer printing,to allow manufacturing with Si NMs and, ultimately, partially formeddevice sub-components obtained through existing foundry sources, withdegradable substrates, and (2) electrohydrodynamic jet (e-jet) printingto establish degradable interconnects between these devices, andencapsulants/packages for functional systems.

Microtransfer Printing. Micro transfer printing (□TP) [1] techniques areused, with targeted implemention in high speed, roll-to-rollmanufacturing modes. The □TP process uses soft, elastomeric stamps tolift solid material micro/nanostructures fabricated from a sourcesubstrate, in an ‘inking’ step, and then to place the materials downonto a target substrate, in a ‘printing’ step. With optimized strategiesfor controlling the strength of adhesion at the stamp surface (i.e.strong and weak in the inking and printing steps, respectively) theentire procedure can be automated to enable high yields (>99.9%) andplacement accuracy (<1 micron). FIG. 44 provides a schematicillustration of the process and a picture of a representative tool.

Materials and integration strategies based on □TP that allow highperformance electronic and optoelectronic systems to be built on unusualsubstrates, including slabs of rubber, have been demonstrated. The corestrategy relies on ‘inks’ including inorganic semiconductornanoribbons/membranes/wires created in well-aligned array formats onsource wafers of silicon, gallium arsenide or indium phosphide[1,2].This type of strategy can be used with Si NMs to form resorbableelectronics. A key feature of this process is that Si NMs formed inclose-packed layouts on silicon wafers can be retrieved and delivered totarget substrates in areal coverages that match system requirements.This capability is essential for efficient materials utilization, andlow cost. To highlight this point, FIG. 45 (left) shows an example of asparse array of semiconductor elements printed in this manner onto aflexible sheet of plastic.

Fundamental and engineering knowledge for use of □TP in a high-speed,continuous, roller printing mode specifically for degradable electronicsis developed. In particular, the physics of soft, van der Waals adhesionin which the bonding strength depends on the direction of forces appliedat the interface between a specially designed stamp and a sourcesubstrate are explored. The illustration in FIG. 46a shows a singlerelief feature in such a stamp, and its natively asymmetric contactangles (□_(a) and □_(b)). Since □_(a) is larger than □_(b), a crack atthe stamp-substrate interface will initiate preferentially from theright corner when the stamp is pulled in the vertical direction with aforce F₂. Pulling at an angle to the left will accelerate crackinitiation from the right corner, thereby resulting in reduced pull-offforce (F₃<F₂). Crack formation is inhibited when the stamp is pulled atan angle to the right, leading to increased pull-off force (F₁>F₂). Inthis way, three different pulling directions cause three differentpull-off forces (F₁>F₂>F₃).

This approach is attractive for two reasons. First, the angled geometryenables enhanced pull-off forces. This physics is important when largeforces are needed to retrieve materials/devices in the inking step of□TP. Second, direction-dependent adhesion can be exploited in thinstamps wrapped around cylindrical supports, to enable high-speedoperation in a continuous, roller printing mode. FIGS. 46b and c provideillustrations. Here, the design allows high adhesion (F₁) for retrieval,during appropriate rotational and translational motion of the rollerstamp and the source substrate, respectively (FIG. 46b ). For theopposite direction, the adhesion physics facilitates printing with acorrespondingly low adhesion (F₃) (FIG. 46c ). As described, a scheme inwhich the roller stamp retrieves devices/structures on one side anddelivers them to a target substrate on the other side, continuously, canbe implemented. Periodically indexing the source substrate in adirection orthogonal to the rolling direction, and translating it backto its starting point will allow the inking process to occur indifferent regions, until all of the material on the source is consumed.Fresh source substrates can be inserted, as needed.

Understanding the fundamental aspects of both the direction dependenceand the overall strength of adhesion is critically important to allowingtheir engineered use for present purposes. The key physics can beanalyzed by a mechanics model of interfacial delamination. A post ofheight his subject to a vertical pull-off force F and a sheardisplacement u imposed at the bottom of the post via the post/substrateinterface. The asymmetric pull-off force F results in a bending momentFh cot θ_(a) on the post. The shear displacement u gives a shear strainγ=u/(h₊0.421 L) in the post,^([23]) which in turn results in a bendingmoment μγhL² due to shear, where the shear modulus of the post is μ=E/3,E is the Young's modulus, and the post is treated as incompressible. Thenet bending moment on the post is M=Fh cot θ_(a)+μγhL². Either of twoinfinitesimal edge cracks at the different corners of the post/substratecontact interface may propagate and lead to delamination. Thecorresponding stress intensity factors can be obtained analytically interms of F and the bending moment M.^([24]) For the limit of vanishingcrack length, the crack tip energy release rates, normalized by EL, aregiven analytically in terms of F and M, or equivalently, F and the shearstrain γ

$\begin{matrix}{{\frac{G_{1,2}}{EL} = {{0.113\left( \frac{F}{{EL}^{2}} \right)^{2}} + {\frac{h^{2}}{L^{2}}\left\lbrack {{0.470\left( {\frac{F}{{EL}^{2}}\cot\mspace{14mu}\theta_{a}} \right)^{2}} + {0.0522\gamma^{2}} - {0.313\frac{F}{{EL}^{2}}\gamma\mspace{14mu}\cot\mspace{14mu}\theta_{a}}} \right\rbrack}}},\mspace{76mu}{{\pm \frac{h}{L}}\frac{F}{{EL}^{2}}\left( {{0.279\frac{F}{{EL}^{2}}\cot\mspace{14mu}\theta_{a}} - {0.0928\gamma}} \right)}} & (1)\end{matrix}$where the subscripts 1 and 2 denote the crack tips at the left and rightcorners of the post/substrate interface, respectively, where the largeelastic match between the post (PDMS) and substrate for an interfacecrack tip has been accounted for.^([25]) For negative shear (□□<0, FIG.46c ) or relatively small shear in the positive direction

${\gamma \leq {3\frac{F}{{EL}^{2}}\cot\mspace{14mu}\theta_{a}}},$the left crack tip has a larger energy release rate than the right one.The opposite holds for when

$\gamma > {3\frac{F}{{EL}^{2}}\cot\mspace{14mu}{\theta_{a}.}}$Crack propagation starts once the left or right crack tip energy releaserates in Equation (1) reach the interfacial fracture toughness □_(□).This condition gives analytically the critical pull-off force

$\begin{matrix}{{\frac{F}{{EL}^{2}} = {f\left( {{\frac{h}{L}\gamma},{\frac{h}{L}\cot\mspace{14mu}\theta_{a}},\frac{\Gamma_{0}}{EL}} \right)}},} & (2)\end{matrix}$which depends upon the normalized shear strain (h/L)γ, contact angle(h/L)cot θ_(a), and interfacial fracture toughness Γ₀/(EL). Thisequation provides a clear point of connection to experimentalmeasurements. These types of models serve to guide not only engineeringimplementations of roller stamps, but also optimization of the materialand relief geometries for further increased F₁ and reduced F₃. Forexample, adding re-entrant features of relief to the angled poststructures can lead to dramatically enhanced adhesion, by shifting ofpoints of stress concentration away from the edges and into the interiorof the contacting area. These effects, along with the influence ofviscoelasticity are explored, in combined scientific and engineeringstudies.

From Silicon Foundry Devices to Resorbable Electronics. Although schemesthat use Si NMs derived from wafers and assembled by □TP providefeasible routes to resorbable electronics, they are non-ideal, for tworeasons: (1) they require device processing and critical features to bedefined on the resorbable substrate and (2) they are unable to exploitestablished infrastructure for manufacturing of silicon integratedcircuits. The first influences the performance and levels ofsophistication in function that can be achieved, due to the severeconstraints in processing options imposed by requirements forcompatibility with the resorbable substrate. The second substantiallyincreases the cost, and also the environmental impact, due to the needfor establishment of separate foundry networks specifically configuredfor resorbable devices. The present methods address these twolimitations, by developing routes to convert specially designed,foundry-processed wafers into sources of component building blocks forresorbable systems. □TP is used as a means to manipulate not just SiNMs, but fully processed primitives or small circuit elements derivedfrom foundry-processed wafers.

The key challenge is to adapt foundry-compatible layouts and availablematerials sets for present purposes. Although preliminary findingsestablish Si and SiO₂ as biocompatible and environmentally friendlyresorbable electronic materials, no other components in commercialintegrated circuits have such characteristics. One solution is to sourcefrom foundries integrated circuits and primitives on ultrathin bodysilicon-on-insulator (SOI) substrates, in layouts with reducedcomplexity and configurations suited for □TP. A modest number ofadditional steps, capable of being performed outside of the foundry,replace the metallization layers with resorbable conductors, such as Mg.FIG. 47 schematically illustrates a process flow. Here, the layoutallows access to metallization throughout the stack, for its removal andsubsequent replacement with resorbable conductors; lateral definition ofthe silicon, the doped regions, the gate dielectrics and the interlayerdielectrics (ILDs) are unaltered, in order to capitalize on foundrycapabilities. Schemes for this material exchange must be developed,along with routes for removing the buried oxide (BOX) on the SOIsubstrate to prepare the components for □TP. The first can beaccomplished using a combination of wet and drying etching techniques.As an alternative, heavily doped layers of polycrystalline silicon canreplace the metallization completely, thereby eliminating the need forremoval. Addressing the second challenge requires careful study of thefracture mechanics of strategic structures (i.e. anchors) that tetherthe components to the underlying wafer after removal of the BOX.Enhanced adhesion enabled by the angled stamp designs relaxrequirements. FIG. 48 provides an SEM image of one type of anchordesign, in a non-resorbable Si CMOS block formed on SOI and thenreleased by etching the BOX.

Electrohydrodynamic (e-Jet) Printing. Schemes for interconnecting theresorbable components are required for functional systems. Theresolution must be sufficiently high to allow small contacting pads onthe individual components, for efficient utilization of the area of thesource wafers. Methods that use electric fields to create fluid flows atthe tips of high resolution nozzles, due to its additive nature andcompatibility with a wide range of material inks and substrates, arepursued. Previous work demonstrates that this physics provides aresolution in droplet generation and printing that extends into the deepsub-micron range (˜100 nm), which exceeds by more than 100 times thebest resolution possible with conventional ink jet technologies [3].FIG. 49 shows a custom-built e-jet printer, with a schematicillustration of the key components, including an ink chamber, controlledpressure supply, metal-coated glass nozzle tip, substrate, andpositioning stages. The back pressure, the standoff height, and theapplied voltage between the conducting nozzle tip and substrate definethe printing conditions. Associated electric fields cause mobile ions inthe ink to accumulate near the surface at the tip of the nozzle. Themutual Coulombic repulsion between the ions introduces a tangentialstress on the liquid surface that, along with the electrostaticattraction to the substrate, deforms the meniscus into a Taylor coneshape as described in [3]. When the electrostatic stress overpowers thesurface tension between the liquid and the interior surface of thenozzle tip, droplets eject from the tip of the cone. References [7-9]detail the development of the e-jet process including novel sensingtechniques, machine design, and printing capability.

These features make e-jet a potentially powerful complement to □TP formanufacturing resorbable electronics. Two key shortcomings in thescience and engineering aspects of e-jet must, however, be overcome toenable its use for this application: (1) sensitivity of resolution anddroplet placement on the local electrical characteristics of thesubstrate, and (2) absence of designs for multiple, parallel nozzlesthat can be implemented in a continuous, roller printing mode. The firstissue leads to challenges in the reliable formation of interconnectlines between resorbable components delivered to insulating substratesby □TP. In particular, the spatial variation in local electronicproperties of the target surface (i.e. metal, dielectric, semiconductor)leads to changes in electric field profiles and, therefore, dropletsizes and trajectories, in ways that can be difficult to accommodate.FIG. 50 shows representative patterns printed by e-jet, showingcapabilities for forming circuit-like arrangements of conductive lines(left) and sub-micron resolution (right). One solution is coupledelectromagnetic and flow models for e-jet nozzles that incorporate, intothe nozzle assembly itself, a ring-shaped counterelectrode. The resultis a system in which all of the driving electric fields are defined in away that is decoupled from the substrate. Inductive current sensingprovides a means to establish feedback control over the printingprocess. FIG. 51 shows a schematic illustration (left) andelectrostatics modeling (right) of an e-jet printing nozzle with anintegrated, concentric ring counterelectrode. This arrangement has thepotential to eliminate effects of the substrate on the printing process.

The second shortcoming is addressed by extending the simulationcapabilities from the work above, to understand electrostatic couplingbetween adjacent nozzles in linear arrays. The ability to accommodatesome degree of substrate misalignment by individually moving each nozzleunit on a separate adjustment micro-platform is incorporated into thedesign. An analogy would be a test pattern sequence used by aconventional ink-jet printer to adjust print cartridge calibration.10-20 different nozzles are incorporated in an overall print head, in alinear arrangement, capable of precision translation with respect to thedirection of motion of the underlying substrate. Sufficient intelligenceis locally embedded into each unit so that it acts as an autonomousentity, calibrating itself by communicating with the web handling systemand □TP module without external assistance.

An important perspective on this manufacturing flow is that the criticaldevice dimensions and, in many cases, the most demanding interconnectswill be formed at the level of the foundry-sourced components. Thiscircumstance reduces demands on throughput and resolution required ofthe e-jet system, although even here feature sizes below thoseachievable with conventional ink jet printing are necessary to costeffectively utilize the foundry components, by allowing the use of smallcontact pads. It is noted, however, that in commercial manufacturing, itis likely that e-jet will be used strategically with other methods, suchas ink jet and screen printing, to form an optimal balance ofresolution, throughput and registration accuracy. An integratedprocessing line, involving □TP, e-jet and ink jet, with an initial stepof imprinting (conventional, thermal embossing) to define registrationmarks appears in FIG. 52. In this sequence, only the patterns formed bye-jet and ink jet require registration. Here, optical patternrecognition systems use a combination of structures formed by μTP andthe relief defined by the embossing step.

EXAMPLE 6

A transient antenna was demonstrated using a Mg antenna (2 μm thick) onglass to wirelessly power an LED. The Mg antenna was integrated withcommercial inductors, capacitors, and diodes (rectifiers) on a circuitboard. As shown in FIG. 53, the circuit worked at a distance of about 3meters (or about 10 feet) to power the LED.

A transient RF power scavenger system was produced according to theschematic diagram and layout shown in FIG. 54. The RF power receiversystem included an inductor, capacitors, and rectifiers fabricated onSOI wafers. The circuit contained cascaded diodes as rectifiers andcapacitors to accumulate charge. Antennae were fabricated on silksubstrates and integrated onto the SOI substrate. The inductor was usedfor impedance matching. Commercial LEDs were used for verifying circuitperformance. Table 1 shows component specifications, materials anddimensions. FIG. 57 shows an example of a fully transient RF scavengingsystem.

TABLE 2 Transient RF power scavenger component specifications,materials, and dimensions. Target specs. Materials Dimensions Inductor 3nH, 2 GHz Electrodes: Mg Turns: 3, Line Dielectrics: SiO2 width: 20 μmSpacing: 20 μm D_(in): 200 μm D_(out): 440 μm One inductor carries outImpedance matching between antenna and rectifier circuit. Capacitor 3 nFElectrodes: Mg Area: 2 mm × 2 mm Dielectrics: MgO Six capacitors storecharge from the rectifiers. Rectifier Si based Single crystal siliconIntrinsic diodes region <10 μm 6 diode-based rectifiers form a voltagemultiplier with the six capacitors, which achieves higher DC voltage (8V) output from an AC input (1.5 Vpp) to power two LED in series. Antenna915 MHz Mg −.4 cm × 5.5 cm −.10 cm × 4 cm

Fabricated Si rectifiers (PIN diodes) were found to be comparable tocommercial and GaAs Schottky diodes. The PIN diodes worked up to ˜300MHz. The lower operating frequency is caused by p-N series resistance(due to distance from metal to junction). It was possible to modify thedesign of the metal contact pads to decrease this effect and achievehigher operating frequencies, as shown in FIG. 55. FIG. 56 shows a fullwave rectifier.

A transient radio was produced using Mg inductors (Mg/SiO₂/Mg; 250nm/800 nm/3 μm) having resonant frequencies and Q-factors in the rangeof about 3 GHz to about 12 GHz and about 4 to about 6.5. Table 2provides specifications for four different Mg inductors, and FIG.58A-58B shows Mg inductors (a) and their corresponding performance data(b).

TABLE 2 Mg inductor specifications. Group 1 Group 2 Group 3 Group 4Resonant Frequency 11.7 GHz 8.3 GHz 6.8 GHz 3.38 GHz Inductance   14 nH 27 nH  19 nH   53 nH Q-factor 6 6.5 3.9 3.8

The transient radio also used Mg capacitors (Mg/MgO/Mg; 250 nm/200nm/500 nm) shown in FIG. 59a . FIGS. 59b-59e show the performance dataof the Mg capacitors. Samples S2 and S4 showed leakage current anddisplayed inductance, instead of capacitance. They work at lowerfrequency, but act as large resistors at higher frequencies due to theleakage current. The final circuit used SiO₂ in place of MgO to allowfor a thicker dielectric layer to reduce leakage at high frequencies.Table 3 shows component specifications, materials, and dimensions.

TABLE 3 Transient Mg capacitor component specifications, materials, anddimensions. Target specs. Achieved Materials Dimensions TransistorGm: >20 mS ~16 mS GaAs Ch. width: 200 μm InGaAs/GaAs Gate length: 0.8 μmThe high-Gm transistor is used to compensate the energy loss in the LCtank Capacitor 1-10 pF 2.3 pF@2 GHz Electrodes: Mg, Area: 20 μm × 100 μm1 μF Au Dielectrics: MgO, SiN Small capacitor is the component of the LCtank to determine the working freq. Large capacitor is used fordecoupling the noise from DC power. Inductor 5-20 nH, Q: 11.1 nH,Electrodes: Mg, Turns: 4.5, >8 4.7@2.75 GHz Au Line width: 27 μmDielectrics: MgO, Spacing: 20 μm SiO₂ D_(out): 630 μm D_(in): 255 μmInductor is the component of the LC tank to determine the working freq.The RF loss in the LC tank is mainly from the inductor. We need highquality factor to make the circuit oscillating.

FIG. 60 shows examples (a), schematics (b)-(c), and performance data (d)of Colpitts oscillators with passive transient components (interconnectsand resistors). The passive components were integrated into commercialHEMTs with LC resonators having six different frequencies. The frequencydesign should be matched to the maximum quality factor of the inductor.In FIG. 60d , the oscillation frequency is 28 MHz, V_(pp) is 0.65 V, andV_(dd) is 2 V.

FIG. 61 shows a design for a fully transient radio including a Si CMOSring oscillator.

FIG. 62 shows an example of patterning Mg by e-jet printing.

EXAMPLE 7

Transient electronics can be broadly defined as a new class of devicethat has the ability to physically disappear at some programmed rate,via a number of possible mechanisms including resorption, dissolution,absorption, corrosion, hydrolysis, depolymerization, or disintegration.The mode and rate of this transience can be pre-set, adjustable in realtime, triggered, and/or sensitive to the properties of the deploymentenvironment, such as chemical or biological events, temperature,pressure, or light. Deployment scenarios range from integration withliving hosts (human/animal/insect/plant/seed; on-dwelling orin-dwelling) to conventional indoor/outdoor environments such asbuildings, roadways, materiel, etc. Examples include implanted medicaldevices that are fully resorbed by the human body (“bio-resorbable”),and communications systems that dissolve when placed in water(“eco-resorbable”). Transient electronics promise a number ofrevolutionary and meaningful military capabilities, including covertISR, simplified diagnosis and treatment of battlefield injuries,improved health monitoring, mission specific human performanceaugmentation, and numerous applications for Special Operations forces.

To achieve transient electronics, key technological breakthroughs arerequired across the entire electronics production process, from startingmaterials to components to finished product. Specifically, innovationsmust occur in the following critical areas:

-   -   1. Materials that exhibit a useful combination of transience        over operationally relevant timescales, and the physical        characteristics (e.g., electrical conductivity, dielectric        properties, moduli) required for construction and performance of        high quality electronic devices;    -   2. Manufacturing and assembly processes for components and        devices commensurate with new transient materials and designs.        This includes novel means to incorporate, enable, program,        control, or enhance transience in complex electronic        architectures;    -   3. Design tools and performance models. This includes design        strategies, novel component designs, and design tradeoffs to        compensate for potentially degraded/compromised performance of        electronics constructed from transient vs. conventional        materials; and    -   4. Layout tools for global circuit board performance using        transient components.

A simple radio, powered by RF scavenging (e.g., witricity), thatdisappears upon exposure to water is developed. This completelytransient device comprises fully resorbable passive components(resistors, capacitors, inductors and antenna) and two active components(a MESFET for the radio, and a diode for the scavenger) thatdisintegrate in water. The active components feature a novel segmenteddesign that utilizes resorbable interconnects, and the entire radio isconstructed on a resorbable substrate. Furthermore, to demonstrateexpanded functionality, the basic RF pickup coil in the radio isreplaced with an environmentally sensitive coil to create awater-dissolvable sensor/radio. This device is used to detect changes intemperature, hydration state, and chemical concentration, and broadcastthe results. Such a device may monitor and report its own transience. Anexample of water soluble electronics is shown in FIG. 63. The radiodesign builds upon recent work in bioresorbable electronics formonitoring electrical processes in vivo.

Radios are an ideal choice since: (1) communications are central tomilitary operations; (2) they serve as an enabling technology which canbe coupled to virtually any device to provide information input andoutput; and (3) with appropriate design, they can intrinsically functionas an integrated sensor and reporter. Power is a critical aspect of alltransient electronic devices. RF scavenging obviates the need foron-board power and thus development of a transient battery or powersource. Finally, the principles, development strategy/pathways, processflow, tools, and basic electronic components developed for theresorbable radio are readily generalizable and provide fundamental andpractical insight into the development of transient electronics ofarbitrary complexity.

The goal of the program is to develop materials and manufacturingtechniques for transient electronics. A water soluble radio provides thedemonstration vehicle. The technical approach builds on recentlydeveloped ‘silicon on silk’ and ‘plastic RF’ electronics technologies.Water soluble passive components such as resistors, capacitors,inductors and antennas, using silk based materials for dielectrics andsubstrates, and magnesium for interconnect and metallization aredeveloped. For semiconductor devices such as transistors and diodes,silicon and gallium arsenide are used in segmented layouts withmagnesium interconnects and silk substrates, to achieve devices thatdisintegrate into small, insoluble pieces upon immersion in water.Performance characteristics are determined using conventionalprocedures. FIG. 64 shows a circuit schematic of the radio device andits physical realization in a flexible, plastic RF technology. Thesystem consists of two functional parts: a module that scavenges RFpower from the ambient (left) and a component that transmits acontinuous RF signal, using power from the scavenger (right). Thescavenger module connects to a resonant antenna. A high speed GaAsSchottky diode yields a positive averaged signal by removing negativeswings in voltage. Capacitors, directly connected to ground, serve aselements for filtering and power storage. The output of this moduleconnects to an oscillator in the RF transmitter component of the system.The frequency of transmission depends on the resonant frequency of aninductor and two capacitors that serve as a simple LC oscillator.Attenuation of the signal in this oscillator due to resistive losses iscompensated by a GaAs MESFET amplifier. This system is an ultrathin,‘plastic RF’ technology, as shown in FIG. 64. FIG. 65 presents thecharacteristics of certain individual elements for this system,including a representative MESFET and collection of passives, all on athin sheet of polyimide, showing good RF response to several GHz. Table4 summarizes building block components.

TABLE 4 Building block components for water-soluble radio. Key Materials(in all cases, silk Mode of Components substrate) Role in CircuitTransience Target Metrics Inductor Dielectric (Silk), Frequency Resorbf_(R) = 5 GHz (for Metal (Mg) resonator 11.1 nF) Q factor = 5 CapacitorDielectric (Silk), Frequency Resorb f_(R) = 1 GHz (for Metal (Mg)resonator, filter 0.8 pF) Resistor Metal (Mg) Impedance Resorb 5 Ω to 10MΩ matching Diode Semiconductor (Si), Rectifier Disintegrate 100:1 Metal(Mg) rectification Vt = 0.5 V MESFET Semiconductor AmplifierDisintegrate fT = 2 GHz (GaAs), Metal (Ni, Vt = 0.2 V Au, Mg) On/offratio = ~10⁵ Transmitting Metal (Mg) Transmitter Resorb Length = 14 cmAntenna (for 1 GHz) Scavenging Metal (Mg) Scavenger Resorb Length = 10cm Antenna (for 1.5 GHz)

Background: The inventors' recent work provides a first demonstration ofthe concept of transient electronic systems, as bioresorbable devicesfor monitoring electrical processes in the brain and other parts of thebody. These results represent the simplest embodiment of this form oftechnology, where the supporting substrate is the only component of thesystem that is transient. FIG. 66a shows a first example: an array ofultrathin, silicon metal oxide semiconductor field effect transistors(Si MOSFETs) built on a thin sheet of silk fibroin derived from silkwormcocoons.[1] Silk is water soluble and bioresorbable, with dissolutionrates that can be adjusted between seconds and months, depending on theprocessing conditions. Preliminary in vivo testing of this ‘silicon onsilk’ technology shows that the substrate resorbs over time, leavingjust the Si MOSFETs; no inflammation, swelling or other adverseresponses were observed (FIG. 66b ).

This type of design was exploited in a neural electrode array capable ofintimate integration with the highly convoluted surface of the brain,for high fidelity electrocorticography (ECoG).[2] The device consists ofan array of ultrathin electrodes in an interconnected, open mesh layout,supported by a thin sheet of silk. The silk provides mechanicalrobustness for handling and mounting onto the surface of the brain. Theultrathin mesh design offers extremely low bending stiffness and abilityto conform to curvilinear surfaces. Washing with saline solutiondissolves the silk and initiates a spontaneous wrapping process, drivenby capillarity. FIG. 67 summarizes in vivo neural monitoring experimentsperformed on a feline animal model with this type of device. Thebackground colors for representative ECoG signals measured at eachelectrode point illustrate the magnitude of the zero lag crosscorrelation between the evoked response and an average of all theresponses from the entire array. The results indicate physiologicallyrelevant data with high signal to noise ratios for more than 90% of theelectrodes. Detailed comparative studies indicate that this deviceoutperforms all alternative monitoring technologies, due to the lowimpedance, intimate electrode tissue contact that forms upon dissolutionof the silk.

The addition of other water soluble, bioresorbable materials onto silksubstrates are explored. As one example, structures consisting ofpatterned thin films of magnesium as metallization on silk are provided.FIG. 68 shows images of a device of this type, with magnesium featuresin the geometry of the ECoG device of FIG. 67. In this example, theentire system dissolves in water, and resorbs in the body over time.These two materials—silk and magnesium—provide a starting point for thetransient electronics technology presented here.

Materials: For this study, electronic components are fabricated usingthree basic resorbable materials: Mg (electrical conductor), silkfibroin (dielectric and substrate), and poly(vinyl alcohol) (alternativedielectric or substrate). This choice of materials offers a high degreeof versatility in the design, construction, and performance ofelectronic devices, and provides compatibility with a broad range ofenvironments. Importantly, Mg, [3] silk, [1,2,4] and PVA are allbiocompatible, bioresorbable, non-immunogenic, and, in low doses,non-toxic, and thus are ideal for transient devices that are integratedwith living hosts. Mg has a high electrical conductivity (2.3×10⁵ S/cm,approximately ½ that of Au), is mechanically robust, and readilyprocessible using vapor phase deposition, all key characteristics forelectronic device manufacturing. This is in contrast to the best organicconductors (such as PEDOT:PSS; Clevios™), which exhibit far lower (up to10³S/cm) and significantly temperature dependent electricalconductivities; the resorption and toxicity profile of this class ofmaterials has not been definitively established. Non-resorbable Si andGaAs are used for the active electronic components, since these are theonly known classes of materials that offer the necessary performance, inestablished device designs.

Silk is an extremely attractive material for transient electronics sinceits dissolution rate is readily and controllably tunable, frominstantaneous to years, via variation of the degree of crystallinity (βsheet content) introduced during material processing, FIG. 69.[3] Thussilk can serve as both an intrinsically transient material and anovercoat or encapsulant to control the kinetics of other resorbablematerials (e.g., Mg). This offers the possibility of creating layeredstructures that function as an “internal clock,” timer, or “switch”(e.g., analogies to time release capsules and drug formulations) forprogrammable transience. Importantly, silk dissolution itself ismediated by chemical and biochemical processes such as enzymaticdegradation, thus enabling integrated sensing/reporting devices, “selfdestruct” (i.e., triggered transience) mechanisms, and activelycontrolled systems.

Additionally, silk fibroin possesses favorable technological propertieswhen interfaced with microelectronic structures. In previouslyunpublished results[13], silk has been used as a replacement fortraditional inorganic oxide layers such as SiO₂ or PMMA. Capacitors andother devices have been manufactured on a glass/ITO substrate bystacking 400 nm thick silk layers as the gate dielectric, n- and p-typeorganic semiconductors (N,N′-ditridecylperylene-3,4,9,10-tetracarboxylicdiimide (P13), and α,ω-dihexyl-quaterthiophene (DH4T) respectively), andgold gate and source electrodes. Both P13 and DH4T are well known andextensively researched materials and provide an ideal benchmark for theelectronic performance of silk. The measured silk dielectric constant inthe device configuration is ε_(S)=6, making it suitable for this work.

Alternative materials are also explored. Pure materials, materialcombinations, and patterning strategies are investigated to achievecontrolled tunable transience over a broad temporal range. Materialstructures are fabricated with form factors (size, thickness, geometry,aspect ratio) found in electronic components, and their resorptionkinetics in water will be quantified over conditions (e.g., temperature,salinity, light intensity) representative of typical deploymentenvironments. In addition, strategies for more sophisticated temporalcontrol, such as time sequenced resorption, exploitation of multipletransience mechanisms, inhibition/promotion, triggering,acceleration/deceleration, and destructive chemical reactions, areexplored in the context of device operation.

Manufacturing: Fabrication of transient electronics is extremelychallenging, due to the intrinsic incompatibility of the materials withwater based procedures that are used in conventional semiconductordevice processing. In addition, the most interesting classes ofsemiconductor materials (e.g. Si, GaAs and others) cannot be deposited,doped or etched under conditions that do not degrade silk, syntheticpolymers and the other transient electronic materials contemplated inthis work. The inventors have, however, developed collections of unusualpatterning and integration approaches that can be adapted for transientelectronics, to overcome limitations of conventional processes. Thethree essential methods are:

1) Microtransfer printing—In recent years, the inventors have developedprinting like methods[5, 7] for deterministic assembly of nanoscaleinorganic semiconductor materials onto substrates of interest, rangingfrom sheets of plastic[8] and slabs of rubber[9] to films of silk.[1,2].In this process, nanoribbons/membranes formed by lithographic processingof semiconductor wafers are ‘inked’ onto the surfaces of soft stamps,and then contact ‘printed’ into configurations and layouts that matchdevice requirements. In this work, this technique is adapted forprinting GaAs MESFETs and Si RF diodes onto silk substrates.

2) Precision shadow masking—Advanced forms of soft lithography forpatterning evaporated materials (e.g. metals, dielectrics) in acompletely ‘dry’ process have been developed.[10] Here, ultrathin,conformal stencil masks placed into contact with a substrate of interestcan enable resolution of a few microns. In this work, this method isused to pattern features of Mg for all passive components, interconnectsand wiring for segmented actives.

3) Electrohydrodynamic jet printing —Ultrahigh resolution forms ofinkjet printing that use electrohydrodynamic effects have been invented.Here, nanoscale, conducting nozzles deliver fluid jets to a targetsubstrate upon application of an electrical bias. Wide ranging classesof inks can be printed in this manner, with resolution that approaches˜100 nm, more than two orders of magnitude better than that achievablewith conventional ink jet methods[11,12]. In this work, this techniqueis extended for use with solutions of silk, to pattern dielectric layersin high frequency capacitors and inductors. The same method is used tocoat selectively different regions of an integrated system, as a meansto control relative rates of dissolution.

Characterization: All passive and active components are characterizedfully, using parameter and vector network analyzers and standard probestation equipment. Key parameters are determined, to assess performanceagainst target metrics. Functionality of the radios and scavengersystems are evaluated using conventional means.

RF Circuitry Description

FIG. 70 shows a circuit schematic of the radio device and its physicalrealization in a flexible, plastic RF technology. The system consists oftwo functional parts: a module that scavenges RF power from the ambient(left) and a component that transmits a continuous RF signal, usingpower from the scavenger (right).

Scavenge Rectifier

Radio signals represent a source of power for operating certain classesof devices whose power demands are modest. The scavenger module doescaptures this ambient radio energy by collecting alternating currentsignals (AC) over a certain band of frequencies using antenna and thenconverting to direct current signals (DC) by passing through a highfrequency, half-wave rectifier. The transmission line between antennaand rectifier matches the input impedance to eliminate signalreflections between them.

FIG. 71 shows a circuit schematic of the rectifier, showing the changeof signal as it passes through each node. The simulation in this exampleuses a ±5 V alternating voltage source, representing the signal from theantenna, 1000 pF capacitors, and D1N4449 Schottky diodes. During anegative half cycle of the input AC, the forward biased D1 charges theC1 to +5V. As the input enters into a positive half cycle, reverse andforward biased D1 and D2, respectively, cause the upper node of C2 toswing to +10V, where it remains as it charges C2. As long as the chargedissipation times of the capacitors are longer than the input cycletime, the output from this single rectifier stays at DC 10V. Thesimulation indicates 9.3V, due to the voltage drop by the diodes. Forsome circuitry, it is possible to double the output DC voltage by addingone more identical rectifier, as the second stage in the figure, whereC3 is charged to 15V and the output voltage at node C is 20V. The largecapacitor at the rectifier output serve as elements for power storage.

Transmitter

The frequency of transmission depends on the resonant frequency of aninductor and two capacitors that serve as a simple LC oscillator.Attenuation of the signal in this oscillator due to resistive losses iscompensated by a GaAs MESFET amplifier which serves as a small signalnegative resistance device. FIG. 72 shows the procedure for designingthe oscillator starting with simple equivalent circuit of MESFET. Theinput impedance, VIN/IIN, of the device with feedback elements X1 and X2equalsZIN=j(X1+X2)−gm X1X2  (1)where gm is the trans-conductance of the MESFET. The oscillator uses twocapacitors for X1 and X2 resulting in negative real part of inputimpedance. As long as this negative real part is 50% larger than anyresistive losses of the LC oscillating system, the signal startsoscillating. The addition of resonating inductor make the net reactancelooking into the gate of the feedback loaded transistor equal to zero atonly one frequency, so the oscillation frequency occurs there byfollowing equation.

$\begin{matrix}{f_{O} = \frac{1}{2\Pi\sqrt{L \times \frac{C\; 1 \times C\; 2}{\left( {{C\; 1} + {C\; 2}} \right)}}}} & (2)\end{matrix}$

The resistor next to the inductor is designed to match the impedancebetween the oscillator and the transmitting antenna.

The inventors demonstrated this system in an ultrathin, ‘plastic RF’technology, as shown in FIG. 70. FIG. 73 represents the characteristicsof certain individual elements for this system, including arepresentative MESFET and collection of passives, all on a thin sheet ofpolyimide, showing good response to several GHz. FIG. 74 shows a circuitdiagram for a radio device that consists of a scavenging rectifier(left) and a transmitting oscillator (right). The bottom frames show thesimulation result of transmitter where the transmitting frequency is at1 GHz.

Radio Circuitry Specification

Rectifier Components

Name Components Value Role in Circuit A_(A) Antenna — Scavenge RF signalC_(A) Capacitor 47 pF Rectifier components D_(A) Schottky diode —Rectifier components C_(B) Capacitor  1 μF Power storageRectifier Specification

Input frequency 2.4 GHz Rectified output 1-3 VTransmitter Components

Name Components Value Role in Circuit C_(c) Capacitor 4.56 pF LCresonator R_(A) Resistor   1 kΩ Source bias R_(B) Resistor   16 ΩMatching network L_(A) Inductor 11.1 nH LC resonator A_(B) Antenna —Transmit RF signal MESFET Active device — AmplifierTransmitter Specification

Output frequency 1 GHzPreliminary Data on Mg Interconnects

The feasibility of using Magnesium for metallization and interconnectwas explored, through a combination of literature studies andpreliminary experiments. Table 5 summarizes literature values for theresistivity and native oxide thickness for Magnesium (Mg), Aluminum(Al), and Copper(Cu), which show that these materials have similarproperties [14,15]. In addition, as a dielectric material, MagnesiumOxide (MgO) could be useful for the passive components.[16-20]. MgO is ahigh-k dielectric (MgO, k˜9.7), and can be deposited by e-beamevaporation, which is compatible with the high resolution shadow maskingtechniques used in this work.

TABLE 5 Resistivity and Thickness of native oxide, compared to Al and CuMg Al Cu Resistivity (Ω · m) 4.42 × 10⁻⁸ 2.82 × 10⁻⁸ 1.68 × 10⁻⁸Thickness of native ~25 Å 35~40 Å 10~15 Å oxide

Simple experiments were performed to further support feasibility of Mg.Table 6 shows resistance/length measured on Mg lines with differentwidths(50/100/150 μm) and thicknesses(1500/3000 Å) on a glass substrate.FIG. 75 shows a plot of the values in Table 6.

TABLE 6 Resistance/Length, Compared to Au Electrodes Width (μm)Thickness (Å) 50 100 150 Mg 1500 10.777 5.098 3.441 3000 6.013 3.4492.409 Au 1500 4.399 2.671 2.177 3000 2.805 2.377 1.964Mg Electrodes for Si Transistors

N-type silicon metal oxide semiconductor field effect transistors (n-SiMOSFETs) with Mg electrodes were fabricated to compare to otherwiseidentical devices with Au electrodes. FIG. 76a presents width-normalizedresistance of the device in the ON-state (R_(on)) as a function of thechannel length at different gate voltages showing that Mg and Au havesimilar transistor contact resistances. FIG. 76b shows typical transfercurves in linear and semi-log scales (left), and full current-voltagecurves (right). The threshold voltage is near −1V, and ON/OFF ratios are˜10³. These DC measurements of representative devices suggest that Mgcan be used in high performance Si MOSFETs. FIG. 76c shows an image ofan array of transistors on a glass substrate.

Rates for Mg Dissolution in Water

To explore the rates for Mg dissolution in water, test structures of Mgon glass were patterned. FIG. 77 shows that traces of Mg fully dissolvein water after 3 hrs (Ti/Mg, 50/1500 Å), and 10 hrs (Ti/Mg, 50/3000 Å),depending on the thickness. (The faint patterns that remain aftercomplete dissolution of Mg correspond to ultrathin layers of Ti as anadhesion promoter.) The dissolution process involves the reaction of Mgwith water to form magnesium hydroxide and hydrogen gas, according to:Mg+2H₂O→Mg(OH)₂+H₂.

Different Candidate Interconnect Materials

Although the data provided above indicate that Mg is well suited for thepresent purposes, it might not be the only material that can be used.Table 7 presents different candidate interconnect materials based ontheir water solubility/dissolvability.[21-30].

TABLE 7 Water-Soluble Conductors Conductivity Water soluble/ ClassMaterial (S/cm) dissolvable Processibility Organic PEDOT:PSS up to 1Dissolvable Solution processing PANI/BPS-35 up to 0.053 DissolvableSolution processing Inorganic Mg 2.26 × 10⁵ Dissolvable Lift-off, Shadowmasking Nano-material SWNT-PABS 0.0056 Soluble Solution processing SWNTwith 306 Soluble (limited) Solution DNA binder processing SWNT with 290Soluble Solution chitosan (limited) processing binder SWNT/SU-8 0.275Soluble Lithography Carbon up to 0.2849 Soluble Solution black/aluminaprocessing Silver Up to 1.17 × 10⁴ Soluble Solution nanowires processingSilver Up to 4 × 10⁴ Soluble Solution nanoparticles processingTunable Silk Dissolution

Rate for silk dissolution is determined by crystallinity (e.g.beta-sheet formation), and processing parameters that allow tuning ofcrystallinity, including:

-   -   1. Solvent (e.g. water, methanol, hexafluoroisopropanol)    -   2. Temperature, thermal history (e.g. annealing)    -   3. Strain, stress

Parameters 1 or 2 are used to tune the dissolution rate, to achievetimescales for dissolution ranging from ˜1 s to 1 year. Previous workshows, for example, fast dissolution occurs in less than 10 s foramorphous silk films, and as slow as about 1 year for highly crystallinesilk films.[31]. FIG. 78 shows the rapid dissolution of a film ofamorphous silk: 0 sec (left), 10 sec (right).

References

-   1. D. H. Kim, Y. S. Kim, J. Amsden, B. Panilaitis, D. L.    Kaplan, F. G. Omenetto, M. R. Zakin and J. A. Rogers, “Silicon    Electronics on Silk as a Path to Bioresorbable, Implantable    Devices,” Applied Physics Letters 95, 133701 (2009).-   2. D. H. Kim, J. Viventi, J. J. Amsden, J. Xiao, L. Vigeland, Y. S.    Kim, J. A. Blanco, B. Panilaitis, E. S. Frechette, D.    Contreras, D. L. Kaplan, F. G. Omenetto, Y. Huang, K. C.    Hwang, M. R. Zakin, B. Litt and J. A. Rogers, “Dissolvable Films of    Silk Fibroin for Ultrathin Conformal Bio Integrated Electronics,”    Nature Materials 9, 511 517 (2010).-   3. X. Gu, Y. Zheng, Y. Cheng, S. Zhong, and T. Xi, “In vitro    corrosion and biocompatibility of binary magnesium alloys,”    Biomaterials 30, 484 498 (2009).-   4. Hu X, Kaplan D, Cebe P. Dynamic protein water relationships    during beta sheet formation. Macromolecules 2008; 41:3939 3948; Hu    X, Lu Q, Kaplan D L, Cebe P. Microphase separation controlled beta    Sheet crystallization kinetics in fibrous proteins. Macromolecules    2009; 42:2079-2087-   5. M. A. Meitl, Z. T. Zhu, V. Kumar, K. J. Lee, X. Feng, Y. Y.    Huang, I. Adesida, R. G. Nuzzo and J. A. Rogers, “Transfer Printing    by Kinetic Control of Adhesion to an Elastomeric Stamp,” Nature    Materials 5(1), 33 38 (2006).-   6. J. H. Ahn, H. S. Kim, K. J. Lee, S. Jeon, S. J. Kang, Y.    Sun, R. G. Nuzzo and J. A. Rogers, “Heterogeneous Three Dimensional    Electronics Using Printed Semiconductor Nanomaterials,” Science 314,    1754 1757 (2006).-   7. S. Kim, J. Wu, A. Carlson, S. H. Jin, A. Kovalsky, P. Glass, Z.    Liu, N. Ahmed, S. L. Elgan, W. Chen, P. M. Ferreira, M. Sitti, Y.    Huang and J. A. Rogers, “Microstructured Elastomeric Surfaces with    Reversible Adhesion and Examples of Their Use in Deterministic    Assembly by Transfer Printing,” Proceedings of the National Academy    of Sciences USA 107(40), 17095-17100 (2010).-   8. J. Viventi, D. H. Kim, J. D. Moss, Y. S. Kim, J. A. Blanco, N.    Annetta, A. Hicks, J. Xiao, Y. Huang, D. J. Callans, J. A. Rogers    and B. Litt, “A Conformal, Bio Interfaced Class of Silicon    Electronics for Mapping Cardiac Electrophysiology,” Science    Translational Medicine 2:24ra22. D01:10.1126/scitranslmed.3000738    (2010).-   9. J. A. Rogers, T. Someya, Y. Huang, “Materials and Mechanics for    Stretchable Electronics,” Science 327, 1603 1607 (2010).-   10. M. D. Dickey, K. J. Russell, D. J. Lipomi, V. Narayanamurti,    and G. M. Whitesides, “Transistors formed from a single lithography    step using information encoded in topography,” Small 6, 2050 2057    (2010), and references therein.-   11. J. U. Park, M. Hardy, S. J. Kang, K. Barton, K. Adair, D. K.    Mukhopadhyay, C. Y. Lee, M. S. Strano, A. G. Alleyne, J. G.    Georgiadis, P. M. Ferreira and J. A. Rogers, “High Resolution    Electrohydrodynamic Jet Printing,” Nature Materials 6, 782 789    (2007).-   12. J. U. Park, J. H. Lee, U. Paik, Y. Lu and J. A. Rogers,    “Nanoscale Patterns of Oligonucleotides Formed by    Electrohydrodynamic Jet Printing with Applications in Biosensing and    Nanomaterials Assembly,” Nano Letters 8(12), 4210 4216 (2008).-   13. R. Capelli, J. J. Amsden, G. Generali, S. Toffanin, V.    Benfenati, M. Muccini, D. L. Kaplan, F. G. Omenetto and R. Zamboni,    “Integration of silk protein in organic and light emitting    transistors,” in review-   14. Tsung-Kuei Kang, Wei-Yang Chou, “Avoiding Cu Hillocks during the    Plasma Process,” Journal of the Electrochemical Society 151(6),    G391-G395 (2004)-   15. Timothy Campbell, Rajiv K. Kalia, Aiichiro Nakano, Priya    Vashishta, Shuji Ogata, and Stephen Rodgers, “Dynamics of Oxidation    of Aluminum Nanoclusters using Variable Charge Molecular-Dynamics    Simulations on Parallel Computers,” Phy. Rev. Let. 82(24), 4866-4869    (1999).-   16. Jung-Min Cho, Kyoung-Ho Lee, Chae II Cheon, Nam In Cho, Jeong    Seog Kim, “Characterization of the biaxial textures of MgO thin    films grown by E-beam evaporation,” Journal of the European Ceramic    Society 30, 481-484 (2010).-   17. Z. Diao, J. F. Feng, H. Kurt, G. Feng, and J. M. D. Coey,    “Reduced low frequency noise in electron beam evaporated MgO    magnetic tunnel junctions,” Applied Physics Letters 96, 202506    (2010).-   18. Tae Wook Heo, Sung Hwan Moon, Sun Young Park, Jae Hyuk Kim,    Hyeong Joon Kim, “Effects of 02 Ambient on the Properties of MgO    Thin Films Deposited by E-Beam Evaporation,” Journal of The    Electrochemical Society 154(11), J352-J356 (2007).-   19. Jeonghee Leea, Taewon Jeong, SeGi Yu, Sunghwan Jin, Jungna Heo,    Whikun Yi, D. Jeonb and J. M. Kim, “Thickness effect on secondary    electron emission of MgO layers,” Applied Surface Science 174, 62-69    (2001).-   20. L. Yan, C. M. Lopez, R. P. Shrestha, E. A. Irene, A. A.    Suvorova, and M. Saunders, “Magnesium oxide as a candidate high-gate    dielectric,” Applied Physics Letters 88, 142901 (2006).-   21. Ciro Chiappini, Xuewu Liu, Jean Raymond Fakhoury, Mauro Ferrari,    “Biodegradable Porous Silicon Barcode Nanowires with Defined    Geometry,” Advanced Functional Materials 20(14), 2231-2239 (2010).-   22. Hailin Cong, Lingfei Hong, Ryan S Harake and Tingrui Pan,    “CNT-based photopatternable nanocomposites with high electrical    conductivity and optical transparency,” Journal of Micromechanics    and Microengineering 20(2), 025002 (2010).-   23. H G Lim, G Y Cho, Jaehwan Kim and K S Kang, “Au micro-pattern    fabrication on cellulose paper: comparison of mu-contact printing    and liftoff techniques,” Journal of Micromechanics and    Microengineering 17(8), 1415-1419 (2007).-   24. Nurdan D. Sankir, Mehmet Sankir and Richard O. Claus,    “Electrical and morphological characterization of    polyaniline/sulfonated poly(arylene ether sulfone) composite films,”    Journal of Materials Science-Materials in Electronics 19(4), 389-392    (2008).-   25. Kwadwo E. Tettey, Michael Q. Yee and Daeyeon Lee,    “Layer-by-Layer Assembly of Charged Particles in Nonpolar Media,”    Langmuir 26(12), 9974-9980 (2010).-   26. Whitten P G, Gestos A A, Spinks G M, Gilmore K J, Wallace G G,    “Free standing carbon nanotube composite bio-electrodes.” Journal of    Biomedical Materials Research Part B-Applied Biomaterials 82B(1),    37-43 (2007).-   27. Jianyong Ouyang, Chi-Wei Chu, Fang-Chung Chen, Qianfei Xu, and    Yang Yang, “Polymer Optoelectronic Devices with High-Conductivity    Poly(3,4-Ethylenedioxythiophene) Anodes,” Journal of Macromolecular    science 41(12), 1497-1511(2004).-   28. Bin Zhao, Hui Hu, and Robert C. Haddon, “Synthesis and    Properties of a Water-Soluble Single-Walled Carbon    Nanotube-Poly(m-aminobenzene sulfonic acid) Graft Copolymer,” Adv.    Funct. Mater. 14(1), 71-76 (2004).-   29. Yuning Li, Yiliang Wu, and Beng S. Ong, “Facile Synthesis of    Silver Nanoparticles Useful for Fabrication of High-Conductivity    Elements for Printed Electronics,” J. AM. CHEM. SOC. 127, 3266-3267    (2005).-   30. Qingzhi Wu, Huaqiang Cao, Qiuying Luan, Jiyong Zhang, Zhao Wang,    Jamie H. Warner and Andrew A. R. Watt, “Biomolecule-Assisted    Synthesis of Water-Soluble Silver Nanoparticles and Their Biomedical    Applications,” Inorganic Chemistry 47, 5882-5888 (2008).-   31. Y. Wang, D. D. Rudym, A. Walsh, L. Abrahamsen, H.-J. Kim, H. S.    Kim, C. Kirker-Head, D. L. Kaplan, “In vivo degradation of    three-dimensional silk fibroin scaffolds,” Biomaterials 29,    3415-3428 (2008).

EXAMPLE 8

Historically, development of every new class of electronics has involvedefforts to achieve operation in forms that undergo negligible changewith time. The technology described here has an opposite goal: to createelectronic systems that physically disappear into the surroundingenvironment in a benign way, at prescribed times and with well-definedrates. Enabled devices include medical monitors that fully resorb whenimplanted into the human body (′bio-resorbable) to avoid adverselong-term effects, and environmental monitors that dissolve when exposedto water (′eco-resorbable) to eliminate the need for collection andrecovery. Other concepts involve ‘compostable’ circuits, to facilitatedisposal.

Work described in this Example provides a scientific and engineeringbase of knowledge on materials, manufacturing strategies and modelingtools for this sort of technology, which is referred to as resorbableelectronics. The targets in performance, reliability in operation andscalability in integration are comparable to those of establishedsilicon integrated circuits. This technology will produce:

-   -   A complete set of materials—semiconductors, conductors,        interlayer dielectrics, substrates and encapsulation layers—and        device designs for resorbable electronics. An emphasis will be        on materials that are (1) resorbable by dissolution or        hydrolysis, (2) biologically compatible and environmentally        benign and (3) capable of performance comparable to that of        conventional silicon integrated circuits.    -   Manufacturing strategies matched to these materials, with the        ability to meet requirements in throughput, resolution and cost        for realistic applications. The resorbable nature of the        devices, and their associated cost considerations, demand        fabrication approaches that are much different than those used        in the established semiconductor industry.    -   Analytical and computational models for resorption at the        material, device and systems levels. In resorbable electronics,        such models will provide computer-aided design (CAD) tools with        roles conceptually similar to those currently used for circuit        design in conventional technologies.

These three components combine basic scientific studies with inventiveengineering efforts, to set the foundational knowledge for a practicaltechnology. Successful outcomes will enable unique device applicationsin areas ranging from sensor/actuator appliques that mitigate effects ofsurgical site infections and then bio-resorb, to radio-enabled watermonitors that eco-resorb eliminating waste. The commercial opportunitiesassociated with these and other systems define an important set ofbroader impacts. The sustainable manufacturing approaches, theassociated reductions in resource consumption and elimination ofhazardous waste streams constitute additional features with notableglobal significance.

Stretchable Electronics: Traditional semiconductor technologies involvecomponents and integrated systems formed on the planar surfaces ofbrittle wafer substrates. Recent work demonstrates that combinedstrategies in materials, mechanics and manufacturing enable newpossibilities, including devices that can stretch, fold, bend and twistwith linear elastic response, and wrap curvilinear surfaces [1]. Thecore ideas exploit micro/nanodevices assembled on rubber substrates, andinterconnected by deformable thin, narrow structures formed bycontrolled non-linear buckling processes [2]. These investigationsyielded the first hemispherical electronic ‘eyeball’ camera, in whichdevice components are in ultrathin, square geometries, and theinterconnects adopt serpentine, non-coplanar layouts [3]. Thisarrangement can accommodate deformations at levels of strain thatapproach 100%. Here, mechanical engineering design in the structureplays a role as prominent as that of circuit/optics design intraditional systems. The yields are sufficiently high to enablefabrication of epidermal electronics and surgical components with modesof functionality and soft, ‘tissue-like’ construction that areimpossible to achieve using any other technology.

Incorporating variability, ecological and biological resorption andbiomaterials into a manufacturable semiconductor technology that offershigh performance and robust operational characteristics is clearly ahigh-risk proposition. With this risk, however, comes the potential fortransformative impact, through the creation of new applicationpossibilities for electronics, new modes for efficient manufacturing andelimination of the classes of waste streams that are associated withcurrent electronics technologies. Furthermore, many of the underlyingideas have applicability beyond systems that offer electronicfunctionality. For example, bio-resorbability in functional materials,scaffolds and chemical delivery systems has relevance to many areas ofbiomedical science, interventional medicine, and regenerativetechnology. Eco-resorbability in structural elements and mechanicalsystems and means for efficient manufacturing of them have the potentialto address many challenges in sustainable development.

Bio/eco-resorbable electronic systems are much different than anysemiconductor technology that exists today. In some cases, resorbableapplications rely on capabilities that cannot be achieved in any otherway. In others, resorbable devices reproduce existing functions, butwith product lifecycles that eliminate waste streams and reintegrate inthe environment. As an example of the former possibility, consider abio-resorbable electronic bacteriocidal appliqué that is delivered tothe external surfaces of medical implant devices, such as permanentpacemakers, implantable defibrillators, mechanical circulatory supportdevices or artificial hips and knees. Such a device could be configuredto eliminate surgical site infections (SSI) through the delivery ofpulses of heat in a spatio-temporally controlled manner via radiofrequency coupling and sensory feedback. Over one or two weeks, thedevice would disappear by bio-resorption, as the patient moves beyondthe period of greatest risk, to rid the patient of unnecessary deviceburden. This type of function would address a significant clinicalproblem: SSI is the second most common form of healthcare-associatedinfection, responsible for 17% of all health-acquired infection [1,2].The associated cost is enormous, both in terms of patient morbidity,mortality and dollars. A recent study examining post-surgical dischargepatient costs found an eight-week cost average of $1773 for patientswithout SSI versus $5155 for patients with SSI [3]. Costs escalate evenfurther if a patient has a resistant organism associated with the SSI.Anderson et al found that in the case of SSI associated with a resistantstaphylococcus, i.e. methicillin-resistant staphilococcus aureus (MRSA),typical charges averaged $60,000 versus $20,000 for patients withantibiotic sensitive staph [4].

The latter possibility is a problem of increasing urgency, driven bydisposal of end-of-life consumer electronics. In recent years, theUnited States alone has generated tens of millions of tons of electronicwaste annually, with a re-use/recycle rate in the range of only tenpercent, leaving the rest to enter into the municipal waste stream. Thisburden is prominent in all developed countries, but most worrisome isits rate of growth in developing countries—a 2010 report forecasts thatthe global generation of obsolete personal computers in developingcountries will exceed that of developed regions in the coming decade. By2030, discarded computers from developing regions are predicted to total400-700 million units, twice that of developed regions at 200-300million units with recycling costs in excess of 50 B$/yr. Aneco-resorbable electronics technology of the sort described here has thepotential to alleviate, at least partly, some of the adverse economicand environmental impacts of these trends.

Background Work—Certain ideas for resorbable electronics originated withwork on the use of water soluble, bio-compatible films of silk assubstrates for silicon metal oxide semiconductor field effecttransistors (Si-MOSFETs) and functional neural electrode arrays (Kim,D.-H. et al. Dissolvable films of silk fibroin for ultrathin, conformalbio-integrated electronics. Nature Mater. 9, 511-517 (2010)). Suchsystems embody an incomplete form of resorption, where the supportingsubstrate, which does not have an active role in the device operation,is the only component that disappears. FIG. 66 shows images of the firstexample: an array of Si MOSFETs built on a thin sheet of silk fibroinderived from silkworm cocoons. Silk is water soluble and bio-resorbable,with dissolution rates that can be adjusted between seconds and months,depending on the processing conditions. Preliminary in vivo testing ofthis ‘silicon-on-silk’ technology shows that the substrate resorbs overtime, leaving just the Si MOSFETs, without inflammation, swelling orother adverse responses.

The second example provides probes for electrocorticography (ECoG) inultrathin, open mesh layouts that spontaneously conform to the moist,curvilinear surface of the brain. Because the devices themselves aredifficult or impossible to manipulate due to their exceptionally lowbending stiffnesses, sheets of silk were used as temporary mechanicalsupports. Washing with saline solution after mounting on the braindissolves the silk and initiates a spontaneous wrapping process for theremaining electronics, driven by capillarity. In-vivo neural monitoringexperiments performed on feline animal models demonstrate the utility ofthis design. Detailed comparative studies indicate that this type ofdevice outperforms all alternative monitoring technologies, due to thelow-impedance, intimate electrode-tissue contact that forms upondissolution of the silk.

Additional recent work from other groups describes forms of organic andbio-organic electronics in which certain constituent layers are watersoluble. (1. Bettinger, C. J. & Bao, Z. Organic thin-film transistorsfabricated on resorbable, biomaterial substrates. Adv. Mater. 22,651-655 (2010). 2. Irimia-Vladu, M. et al. Biocompatible andbiodegradable materials for organic field-effect transistors. Adv. Fund.Mater. 20, 4069-4076 (2010). 3. Legnani, C. et al. Bacterial cellulosemembrane as flexible substrate for organic light emitting devices. ThinSolid Films 517, 1016-1020 (2008).) Although some of these materials arepotentially complementary to those described here, the modestperformance and uncertain reliability of devices enabled by them willprevent many applications of interest, as discussed below.

A set of functional materials that can be used with silk platforms andpackages to yield fully transient forms of electronics, withexceptionally high performance, are described. For the electrodes andinterconnects, thin films of Mg represent an excellent choice, due tospontaneous reaction with water to form Mg(OH)₂, which isenvironmentally and biological benign. (Mg is used as a structuralmaterial in certain kinds of resorbable intravascular stents. Witte, F.The history of biodegradable magnesium implants. Acta Biomater. 6,1680-1692 (2010).) In addition, Mg offers high electrical conductivity(2.3×10⁵ S/cm, approximately ½ that of Au), it is mechanically robust,and readily processible using vapor phase deposition. Because hydrolysisof Mg involves MgO as an intermediate, this oxide becomes a naturaloption for an interlayer dielectric.

For the semiconductor, silicon itself is an interesting candidatebecause it undergoes hydrolysis to form ortho silicic acid: Si(OH)₄. (J.D. Rimstidt, H. L. Barnes, Geochim. Cosmochim. Ac. 44, 1683 (1980).) Achallenge is that the rates for the associated reactions areexceptionally small: using literature parameters for diffusion and rateconstants (H. Seidel, L. Csepregi, A. Heuberger, H. Baumgartel, J.Electrochem. Soc. 137, 3612 (1990).), one can estimate that a piece ofsilicon with dimensions comparable to those of a diced integratedcircuit (˜12 mm×˜12 mm×-700 μm) will require more than ˜600 years todissolve and nearly ˜8 L of water to avoid solubility limits. A keyinsight, however, is that devices such as MOSFETs can operate well withsilicon in extremely thin forms, due to the interfacial nature of chargetransport. A nanomembrane of silicon (Si NM) with lateral dimensionssimilar to those of the integrated circuit considered above but with athickness of 35 nm will dissolve in ˜10 days, in as little as ˜0.4 mL ofwater. Experimental results support this conclusion. Silicon in thisform can, therefore, be used as a resorbable semiconductor. Just asimportant, thin SiO₂ is resorbable via similar chemistry, therebyproviding an excellent gate dielectric for use in Si NM MOSFETs.Furthermore, both Si and SiO₂ are bio and eco-compatible; use of poroussilicon bodies as drug delivery vehicles provides evidence of theformer. (1. Park, J. -H. et al. Biodegradable luminescent porous siliconnanoparticles for in vivo applications. Nature Mater. 8, 331-336 (2009).2. Trewyn, B. G. et al. Biocompatible mesoporous silica nanoparticleswith different morphologies for animal cell membrane penetration.Chemical Engineering Journal 137, 23-29 (2008).)

Collectively deploying all of these materials with silk as a substrateand an encapsulant yields integrated circuits that are fully resorbable,with rates that can be adjusted by selection of thicknesses andcompositions of the various device layers. FIG. 3c shows a demonstrationplatform that includes a diverse range of active and passive components,including Si NM MOSFETs, Mg/MgO/Mg capacitors, Mg inductors, and Si NMdiodes, all on a thin film of silk. In MOSFETs with Mg electrodes(thickness ˜250 nm) for the source, drain and gate; MgO and/or SiO₂ forthe gate dielectric (thicknesses between 100 and 150 nm); and Si NMs(thickness 300 nm) as the semiconductor, excellent properties arepossible, including saturation and linear regime mobilities of 560cm²/Vs and 660 cm²/Vs, respectively, on/off ratios of >10⁵, subthresholdslopes of 160 mV/dec (at Vd=0.1 V) and width-normalized current outputsof 0.34 mA/mm (at Vg=5 V). These characteristics compare favorably tothose of counterparts with similar critical dimensions formed on siliconwafers. Combining multiple such devices provides a route to integratedcircuits.

A set of interrelated scientific issues underpin resorbable electronics,and the multiple applications that this new class of technology cansupport. This Example describes materials and material interfaces,device and circuit engineering, manufacturing techniques and predictivetheoretical modeling. Combining this knowledge allows for functionaldemonstration vehicles, as a key step toward establishing a path forscalable production of these components. The outcome is a complete baseof science and engineering knowledge for resorbable electronics, with anemphasis on bio- and eco-resorbable devices that disappear completely,due to molecular level dissolution or chemical reaction. The followingsub-sections describe the three enabling components: materials,manufacturing and modeling.

Materials for Resorbable Electronics

Research on materials is essential to the development of a resorbableelectronics technology. The semiconductors, conductors, gatedielectrics, interlayer dielectrics, encapsulation layers and substratesserve as a baseline for the described efforts. One significant findingis that doped and undoped Si NMs chemically transform in a biologicallyand environmentally benign manner, by hydrolysis. Embodiments of theinvention described here exploits this fact to develop other classes ofmaterials for a complete bio/eco-resorbable electronics technology. Thiswork addresses the fundamental aspects of advanced materials forconductors, dielectrics to enable control over their resorption times,where practical applications can demand times that range between a fewminutes and several months. The first phase of research focuses onunderstanding and controlling the individual materials and theirinterfaces. In a second phase, their collective integration in patternedmultilayer configurations, to define overall resorption times of theresulting structures, is explored. Throughout this time, the workinterfaces closely with efforts in manufacturing to develop devices andcircuits with desired behaviors.

Resorbable Conductors—Mg is used as a starting point. Past efforts in Mgas a structural material for resorbable intravascular stents providemotivation for exploring alloys of Mg, for which small quantities(general ˜10% by weight) Al, Ag, Ca, Li, Mn, Si, Sn, Y, Zn, Zr, and rareearth elements [2] yield, mostly ternary systems. The electricalproperties and the resorption rates of these alloys are examined,through combined electrical, chemical and morphological studies. Forinstance, in one studied example, magnesium-aluminum-zinc alloys havebulk resistivities almost double that of pure Mg (with 3% aluminum, 1%zinc), but both the bulk and thin film dissolution rates aresignificantly slower (by as much as 4 times at physiologically andenvironmentally relevant ranges of pH). In general, higher aluminumconcentrations slow the bulk degradation rate (e.g. AZ61 or AZ91). Slowresorption can be particularly important for device classes that demandcontinuous contact between electrodes in biological systems (e.g.bio-resorbable electrophysiological monitors) or aqueous sensingenvironments (e.g. eco-resorbable sensors). For such purposes, W couldbe interesting, due to its previous use in resorbable embolizationcoils. Here, W exhibits resorption rates (to form tungstic acid, as aresult of hydrolysis) that are much lower than those of Mg or itsalloys, as shown in published studies. In vivo studies of W embolizationcoils indicate increased levels of serum tungsten during resorption butwithout any adverse biological response [6]. The bulk resistivity of Wis very similar to Mg (5×10⁻⁸ Ωm vs 4.4×10⁻⁸ Ωm). Combinations of W, forexample as capping layers, with Mg are possible as additionalengineering design options.

A third metal is Fe, which has, like Mg, received interest as abiodegradable material for stents. Iron resorbs in water by firstoxidizing and then dissolving to either Fe²⁺ or Fe³⁺, depending on thepH. In vitro testing indicates degradation rates in Fe that are muchlower than those for Mg. On the other hand, in vivo degradation ratesare much lower than the rates predicted by in vitro studies [8]. Thisdifference has been attributed to passivation of the iron surface bysome insoluble compound, such as iron phosphide which could form fromreaction with phosphate ions in the body. Some combination of Mg, Mgalloys, W and Fe likely provides all of the necessary capabilities forconductors in resorbable electronics.

Resorbable Dielectrics—For gate dielectrics in MOSFETs and interlayerdielectrics in integrated circuits, SiO₂ and MgO have strong potentialto satisfy all requirements. Detailed studies of resorption rates andkinetics in these systems, with comparisons to modeling, provideimportant information. To enable additive processing using thetechniques described below, sol-gel routes to organically modifiedsilica materials and their ability to serve not only as interlayerdielectrics, but also potentially as gate insulators, are explored.These materials in single layers, or in multilayer configurations withmetals such as W and bio-polymers such as silk, can be used asencapsulants to control overall resorption rates. These options areexplored, with an emphasis on measuring water permeation rates fordifferent stack designs, with high resolution electron microscopystudies of the morphologies and interfaces.

Resorbable, Functional Substrates and Coatings

Rationale for Materials Selection—Organic and bio-organic materials thatare compatible with the metals, dielectrics and semiconductors describedabove represent excellent candidates for substrates and encapsulants.Silk is a biomaterial that is uniquely suited for ressorbableelectronics, due to its favorable combination of biological, physicaland electronic properties, and its compatibility with advancedmanufacturing. Silk is a widely available commodity textile that can bepurified and manufactured cost-effectively as thin, smooth flexiblesheets with simple water-based processing. The native surface chemistryand smooth morphology of silk allows for strong adhesion of metals(e.g., gold, iron, others) with further simple modificationpossibilities (e.g., carbodimmide, streptavidin-biotin coupling,diazonium reactions, as well as control of casting temperature andhumidity) to optimize interfaces. Silks form tough, strong materials dueto the hydrophobic nature of the protein and its self-assembly intophysically crosslinked networks. By controlling the density ofcrosslinks, the films can be formulated to dissolve at controlled rates(from minutes to years), and can be designed to incorporate andstabilize biomolecules and other targets of interest for sensing.Alternatives such as collagen, PLGA, and PLA each offer only some subsetof these features. As examples, collagens are prone to denaturation,they tend to swell upon hydration and they fail to achieve robustinterfaces with metals. PLGAs have similar disadvantages, and they alsomust be processed in organic solvents, thereby removing certainprocessing options as well as the ability to combine with biologicallyactive compounds. Other less commonly studied options includingchitosan/chitin, polyhydroxyalkanoates, polycaprolactone (PCL) andkeratin are challenging to process and offer limited ability to controlthe material properties and, consequently, theirdegradation/resorbability.

Silk Film Formulation and Resorption Studies—The liquid-solid transitionoccurring during silk film formation, and the associated silk proteinself-assembly, crystallization, processing chemistry, and methods are offundamental importance for resorbable device fabrication. Silk materialsare enzymatically degraded providing predictable lifetimes and controlof material fate. Thus silk can serve as both an intrinsicallyresorbable substrate material or as an overcoat or encapsulant tocontrol the kinetics of other resorbable materials (e.g., Mg). Thisoffers the possibility of creating layered structures that function asan “internal clock,” timer, or “switch” (e.g., in analogy totime-release capsules and drug formulations) for programmableresorbability.

This work establishes the knowledge base to develop silk substrates forresorbable electronic devices. In particular, different modalities topost-process silk films and silk coatings to control their rate ofresorption (either in the presence of water or enzymes) are explored.The dissolution rate (instantaneous to years) of such materials iscontrolled through the degree of crystallinity (β-sheet content)introduced during material processing [3]. These fundamental studiesyield a set of processing parameters for material substrate fabrication.The experimental approach includes the preparation and characterizationof silk solutions which are used to form films and coatings, which arethen post-processed to control the end crystalline state of thefilm/coating, thereby determining its resorbability rate.

There is a largely unexplored relationship between assembly andresorbability for silk films and coatings. To unravel this relationship,the current approach involves varying silk solution formulations byadjusting parameters in the fibroin extraction process (variation ofboil times, pH, and processing temperature) and subsequent generation ofwater-based silk solutions with varying degrees of concentration.Systematic analysis of the generated silk sheets elucidates the role ofpost-processing temperature, of additional solvents (e.g. methanol,HFIP), of the environmental humidity range (which determines the dryfilm's water content, in turn correlated to its β-sheet content) and ofthe stress and strain imposed on the silk film during its formation(which also induces β-sheet formation). Structural assessments of thefilms are carried out with a cadre of diagnostics (e.g. AFM, FTIR, X-rayand cryo-TEM). These studies inform the appropriate parametercombinations needed to generate suitable substrates for electronicinterfaces and to obtain predefined and controllable resorption rates ofthe substrate materials.

These bioresorbable substrates are also evaluated from an electrical andelectrical interface standpoint. Measurements of the different films arecarried out to determine baseline parameters, such as the dielectricconstant, breakdown threshold, and resistivity. Interface properties areparticularly important for electronic device assembly. The interfaceproperties between differently formulated films and Mg, and MgO arestudied, along with their thermal properties (thermal conductivity,interface Kaptiza resistance), or bulk properties (levels of ionicimpurities and their mobility, water uptake, and gas/liquid permeabilityto name a few).

Functionalized Resorbable Materials—Modifications of the substratethrough the addition of dopants to the silk solution will furthercompound these studies. This extra degree of freedom offers options tomodulate the physical parameters of the substrates (for exampleenhancing conductivity or entraining therapeutics for bio-integration).The effect of biochemical dopants embedded in the silk system related tothe ambient environment and material parameters (e.g. elasticity,degradation, interfaces, water content) and their effect on resorptionrates and interfaces with Mg and MgO are evaluated. Silks are doped withbiologically relevant dyes (fluorescin, rose Bengal, rhodamine),protein-based bio-dopants (reflectin, bacteriorhodopsin, hemoglobin,porphyrin), or chemically modified (GFP, azobenzene). The dopedresorbable substrates are prepared and assessed using the sameprocessing and diagnostics described above. Results are directlycompared to the findings obtained with undoped films under the sameprocessing conditions.

Manufacturing Methods for Resorbable Electronics

Low cost manufacturing is an essential requirement for a realisticresorbable electronics technology, due to the intrinsically finiteoperational (and physical) lifetimes. Processes used in thesemiconductor industry are not applicable because of their incompatiblecost structures and because many resorbable materials are incompatiblewith established solvents, photoresists, developers, exposure techniquesand etching methods. This work develops a manufacturing strategy thatinvolves two main steps (1) transfer printing, to allow manufacturingwith Si NMs and, ultimately, integration of partially formed devicesub-components obtained through existing foundry sources, withresorbable substrates, and (2) electrohydrodynamic jet (e-jet) printingto establish resorbable interconnects, interlayer dielectrics andencapsulants/packages for functional systems. The first phase focuses onthe separate development of these two capabilities. The second phaseinvolves their integration with one another and with more conventionalmethods into a continuous manufacturing process, demonstrated at a smallscale in demonstration test vehicles described below.

Microtransfer Printing—For the first step, micro transfer printing(μTP)[1] techniques are used with a goal of implementing them in highspeed, roll-to-roll manufacturing modes. The μTP process uses soft,elastomeric stamps to lift solid material micro/nanostructuresfabricated from a source substrate, in an ‘inking’ step, and then toplace them down onto a target substrate, in a ‘printing’ step. Withoptimized strategies for controlling the strength of adhesion at thestamp surface (i.e. strong and weak in the inking and printing steps,respectively) the entire procedure can be automated to enable highyields (>99.9%) and placement accuracy (<1 μm). FIG. 45 provides imagesof representative printing results, and a large sheet of silk as aresorbable receiving substrate for this process. Work described aboveand shown in FIG. 3c illustrates how this type of strategy can be usedwith Si NMs to fabricate resorbable electronics. A key feature of thisprocess is that Si NMs formed in close-packed layouts on silicon waferscan be retrieved and delivered to target substrates in areal coveragesthat match system requirements. This capability is essential forefficient materials utilization, and low cost.

This work develops new fundamental and engineering knowledge for use ofμTP in a high-speed, continuous, roller printing mode. In particular,the physics of soft, van der Waals adhesion in which the bondingstrength depends on the direction of forces applied at the interfacebetween a specially designed stamp with angled relief and a sourcesubstrate are explored. This approach is attractive for two reasons.First, angled geometries enable enhanced pull-off forces. This physicsis important when large forces are needed to retrieve materials/devicesin the inking step of μTP, as will be the case for the CMOS structuresdescribed in the next section. Second, direction-dependent adhesion canbe exploited in thin stamps wrapped around cylindrical supports, toenable high-speed operation in a continuous, roller printing mode. Ascheme in which the roller stamp retrieves devices/structures on oneside and delivers them to the target substrate on the other side,continuously is possible. Periodically indexing the source substrate ina direction orthogonal to the rolling direction, and translating it backto its starting point allows the inking process to occur in differentregions, until all of the material on the source is consumed. Freshsource substrates can be inserted, as needed.

Understanding the fundamental aspects of both the direction dependenceand the overall strength of adhesion is critically important to allowingtheir engineered use for present purposes. The key physics are analyzedby a mechanics model of interfacial delamination, where the asymmetricpull-off force results in a bending moment that creates interfacialshear that drives crack formation. By evaluating the conditions, it ispossible to derive analytically the critical pull-off forces, forconnection to experimental measurements with substrates of silk indifferent formulations. These types of models serve to guide not onlyengineering implementations of roller stamps, but also optimization ofthe material and relief geometries and choice of silk. For the stamp,adding re-entrant features of relief to the angled post structures canlead to dramatically enhanced adhesion, by shifting of points of stressconcentration away from the edges and into the interior of thecontacting area. These effects, along with the influence ofviscoelasticity, physical crosslinking, and related parameters in boththe stamp and the receiving silk substrates are explored, in combinedscientific and engineering studies.

From Silicon Foundry Devices to Resorbable Electronics—Although schemesthat use Si NMs derived from wafers and assembled by μTP providefeasible routes to resorbable electronics, per results presented above,they are non-ideal, for two reasons: (1) they require device processingand critical features to be defined on the resorbable substrate and (2)they are unable to exploit established infrastructure for manufacturingof silicon integrated circuits. The first influences the performance andlevels of sophistication in function that can be achieved, due to thesevere constraints in processing options imposed by requirements forcompatibility with the silk substrate. The second substantiallyincreases the cost, and also the environmental impact, due to the needfor establishment of separate foundry networks specifically configuredfor resorbable devices. This work addresses these two limitations byproviding routes to convert specially designed, foundry-processed wafersinto sources of component building blocks for resorbable systems. μTP isused as a means to manipulate not just Si NMs, but fully processedprimitives or small circuit elements derived from foundry-processedwafers.

The key challenge is to adapt foundry-compatible layouts and availablematerial sets for present purposes. Although preliminary findingsestablish Si and SiO₂ as biocompatible and environmentally friendlyresorbable, no other materials in commercial integrated circuits havesuch characteristics. One solution is to source from foundriesintegrated circuits and primitives on ultrathin bodysilicon-on-insulator (SOI) substrates, in layouts with reducedcomplexity and configurations suited for μTP. A modest number ofadditional steps, capable of being performed outside of the foundry,replace the metallization layers with resorbable conductors, such as Mg.Here, layouts allow access to metallization throughout the stack, itsremoval and subsequent replacement with resorbable conductors; lateraldefinition of the silicon, the doped regions, the gate dielectrics andthe interlayer dielectrics are unaltered, in order to capitalize onfoundry capabilities. Schemes for this material exchange are developed,along with routes for removing the buried oxide (BOX) on the SOIsubstrate to prepare the components for μTP. The first can beaccomplished using a combination of wet and drying etching techniques.Addressing the second challenge requires careful study of the fracturemechanics of strategic structures (i.e. anchors) that tether thecomponents to the underlying wafer after removal of the BOX. Enhancedadhesion enabled by the angled stamp designs and suitably processed silksubstrates relaxes requirements. FIG. 48 provides an SEM image of onetype of anchor design, on a non-resorbable Si CMOS block formed on SOIand then released by etching the BOX.

Electrohydrodynamic (e-Jet) Printing—Schemes for interconnecting andselectively encapsulating the sort of resorbable components described inthe previous section are required for functional systems. The resolutionmust be sufficiently high to allow small contacting pads on theindividual components, for efficient utilization of the area of thesource wafers (for resorbable CMOS, or for Si NMs). Printing methodsthat use electrohydrodynamic effects to create fluid flows at the tipsof high resolution nozzles, due to its additive nature and compatibilitywith a wide range of material inks and substrates, are pursued. Mostimportant, previous work demonstrates that this physics provides aresolution in droplet generation and printing that extends into the deepsub-micron range (˜100 nm), which exceeds by more than 100 times thebest resolution possible with conventional ink jet technologies [3].These features make this method, referred to as e-jet, a potentiallypowerful complement to μTP for manufacturing of resorbable electronics.Two key shortcomings in the science and engineering aspects must,however, be overcome (1) the resolution and droplet placement can dependon the local electrical characteristics of the substrate, and (2) thethroughput is limited, due to the absence of systems that canaccommodate use of multiple, parallel nozzles in a continuous, rollerprinting mode. The first issue leads to challenges in the reliableformation of interconnect lines between resorbable components deliveredto an insulating substrate, such as silk, by μTP. In particular, thespatial variation in local electronic properties of the target surface(i.e. metal, dielectric, semiconductor) induces changes in electricfield profiles and, therefore, droplet sizes and trajectories, in waysthat can be difficult to accommodate. One solution is to develop coupledelectromagnetic and flow models for e-jet nozzles that incorporate, intothe nozzle assembly itself, a ring-shaped counterelectrode. The resultis a system in which all of the driving electric fields are defined in away that is decoupled from the substrate. Inductive current sensingprovides a means to establish feedback control over the printingprocess.

The second shortcoming is addressed by extending the simulationcapabilities that emerge from the work above, to understandelectrostatic coupling between adjacent nozzles in linear arrays. Thesimulation should incorporate the ability to accommodate some degree ofsubstrate misalignment by individually moving each nozzle unit on aseparate adjustment micro-platform. An analogy would be a test patternsequence used by a conventional ink-jet printer to adjust printcartridge calibration. 10-20 different nozzles are incorporated in anoverall print head, in a linear arrangement, capable of precisiontranslation with respect to the direction of motion of the underlyingsubstrate. At droplet generation rates that currently extend to 50 kHz,this multinozzle arrangement provides the required throughput. Achallenge is to locally embed sufficient intelligence into each unit sothat it acts as an autonomous entity, calibrating itself bycommunicating with the web handling system and μTP module withoutexternal assistance. Feedback strategies based on current sensing,described above, and monitoring systems in the μTP tool are developed.An important perspective on this manufacturing flow is that the criticaldevice dimensions and, in many cases, the most demanding features areformed at the level of the foundry-sourced components. This circumstancereduces demands on throughput and resolution required of the e-jetsystem, although even here feature sizes below those achievable withconventional ink jet printing are necessary to cost effectively utilizethe foundry components, by allowing the use of small contact pads.

However, in eventual commercial manufacturing, it is likely that e-jetwill be used strategically with other methods, such as ink jet andscreen printing, to form an optimal balance of resolution, throughputand registration accuracy. An integrated processing line, involving μTP,e-jet and ink jet, with an initial step of imprinting (conventional,thermal embossing) to define registration marks is envisioned. Asoutlined above, the established compatibility of silk with these othermodalities represents a critical consideration of its use in this way.In this sequence, only the patterns formed by e-jet and ink jet requireregistration. Here, optical pattern recognition systems use acombination of structures formed by μTP and the relief defined by theembossing step. The initial phases of work focus on the μTP and e-jetmodules. In parallel, the use of e-jet in additive (e.g. silk, solgelmaterials) and subtractive (e.g. Mg, W) patterning modes with thematerials are established. Integration focuses on building the circuittest vehicles described below.

Computational Design Tools for Resorbable Electronics

Analytical and computational models are needed to establish a base ofscientific knowledge and engineering capabilities for resorbableelectronics. Circuit design tools used for conventional electronicscapture only part of the operational aspects; a complementary set ofresorption design tools are necessary. Analytical and computationalmodels for resorption at the material, device and system levels, withdirect connection to experimental results based on the materials, devicedesigns and manufactured structures are described above. The first phasefocuses on establishment and experimental verification of the models,based on single layer studies of the various materials outlined above.Next, multilayer stacks of these materials, and their interactions withone another are studied. Final models capture resorption at thefunctional device and system levels, in test vehicles, manufactured withthe techniques described above.

Modeling of Resorbable Materials—Analytical studies of the kinetics ofresorption use models of reactive diffusion. Equation (1) illustratesthe model and some results for diffusion of water and hydroxide ionsinto the Si. The rate limiting step is defined by the diffusion ofwater, hydroxide ions and other liquids into the materials for resorbaleelectronics (e.g., Si, SiO, MgO, Fe, Mg and Mg alloys with smalladditions of Al, Ag, Ca, Li, Mn, Si, Sn, Y, Zn, Zr) and reactionthroughout the thickness direction y, according to

$\begin{matrix}{{{{D\frac{\partial^{2}w}{\partial y^{2}}} - {kw}} = \frac{\partial w}{\partial t}},} & (1)\end{matrix}$where D and k are the diffusivity for water (or other liquid) and thereaction constant between the materials for resorbable electronics andphosphate buffer solution, respectively, and w is the concentration ofwater. Upon dissolution of Si, the following equilibrium will beestablished: Si+4H₂O<->Si(OH)₄+2H₂, where the neutral ortho-silicic acidwill leave the silicon surface by diffusion. In this model, thethickness h of the Si nanomembrane, normalized by its initial thickness(h₀), will depend on the normalized time Dt/h₀ ² and reaction constantkh₀ ² as well as the molar masses of water M(H₂O) and silicon M(Si), theinitial water concentration w₀, and mass density □_(Si) of Si. This willgive the scaling law for the dissolution of Si nanomembrane in water,i.e.,

$\begin{matrix}{{\frac{h}{h_{0}} = {f\left( {\frac{Dt}{h_{0}^{2}},\frac{{kh}_{0}^{2}}{D},\frac{w_{0}}{\rho_{Si}}} \right)}},} & (2)\end{matrix}$where f is a non-dimensional function, and takes the form

$\begin{matrix}{{f\left( {\xi,\eta,\zeta} \right)} = {1 - {\frac{M({Si})}{4{M\left( {H_{2}O} \right)}}{\eta\zeta}{\left\{ {{\xi\frac{\tanh\sqrt{\eta}}{\sqrt{\eta}}} - {2{\sum\limits_{q = 0}^{\infty}\;\frac{1 - e^{- {\zeta{\lbrack{\eta + {{({n - \frac{1}{2}})}^{2}\pi^{2}}}\rbrack}}}}{\left\lbrack {\eta + {\left( {n - \frac{1}{2}} \right)^{2}\pi^{2}}} \right\rbrack}}}} \right\}.}}}} & (3)\end{matrix}$

FIG. 4(c) shows that the preliminary modeling results (curves) for theinitial thickness h₀=35, 70 and 100 nm of Si NMs at body temperature(37° C.), which agree well with the experimental results (shown by thepoints). The analytical model leads to accurate prediction of the timefor complete dissolution of materials. Such an approach may be extendedto other materials for resorbable electronics.

Models of dissolution with time-dependent reaction rate constants arealso developed. In many cases, the reaction constant for the netreactions can decrease as time elapses, and takes a general form ofk(t). The solution of the equation of reactive diffusion is obtained as

$\begin{matrix}{{\frac{w}{w_{0}} = {\frac{\cosh\left\lbrack {\frac{y}{h_{0}}\sqrt{\frac{{k(t)}h_{0}^{2}}{D}}} \right\rbrack}{\cosh\sqrt{\frac{{k(t)}h_{0}^{2}}{D}}} + {\sum\limits_{n = 1}^{\infty}\;{\frac{2\left( {- 1} \right)^{n}}{\left( {n - \frac{1}{2}} \right)\pi}\left\{ {{e^{- {\int_{0}^{t}{{\chi_{n}{(\tau)}}{d\tau}}}}\left\lbrack {1 + {\int_{0}^{t}{{k(\eta)}^{\int_{0}^{\eta}{{\chi_{n}{(\tau)}}{d\tau}}}d\;\eta}}} \right\rbrack} - \frac{k(t)}{\chi_{n}(t)}} \right\}{\cos\left\lbrack {\left( {n - \frac{1}{2}} \right)\pi\frac{y}{h_{0}}} \right\rbrack}}}}},} & (4)\end{matrix}$where χ_(n)(t)=k(t)+(2n−1)²π²D/(4h₀ ²). The thickness of a Sinanomembrane can be obtained as

$\begin{matrix}{\frac{h}{h_{0}} = {1 - {\alpha{\int_{0}^{t}{\left\lbrack {{k(t)} - {\frac{1}{3}\frac{{k^{2}(t)}h_{0}^{2}}{D}}} \right\rbrack{{dt}.}}}}}} & (5)\end{matrix}$

One simple example is the electrical resistance R, which is related toits initial value R₀ and the ratio of current to initial thickness h/h₀by R=R₀(h/h₀)⁻¹. FIG. 4(e) shows that the modeling results (curves) forthe resistance change agree well with the experiments (shown by points).Similar analytical frameworks can capture related behaviors in othermaterials (e.g., Fe, and Mg alloys) for resorbable electronics.Computational models are developed for the dissolution of alloys sincedissolution involves the reactive diffusion of multiple elements. Thereactive diffusion equation (1) now becomes D∇²w−kw=∂w/∂t for eachelement, where ∇² is the Laplace operator. This equation is solvednumerically, and coupled with those for other elements via thecontinuity conditions across the interfaces in alloys. In addition, theeffect of W capping layers may be studied via the numerical analysis.

For resorbable dielectrics and semiconductors, the modeling work focuseson the rate of resorption, such as the critical time t_(c) for thethickness to reach zero. For Si NMs, this is obtained analytically as

$\begin{matrix}{t_{c} = {\frac{4\rho_{Si}M\mspace{14mu}\left( {H_{2}O} \right)}{{kw}_{0}M\mspace{14mu}({Si})}{\frac{\sqrt{\frac{{kh}_{0}^{2}}{D}}}{\tanh\sqrt{\frac{{kh}_{0}^{2}}{D}}}.}}} & (4)\end{matrix}$The results are t_(c)=14, 16 and 19 days for h₀=35, 70 and 100 nm,respectively, at the body temperature T=37° C.

Modeling of Resorbable Components and Devices—For resorbable componentssuch as interconnects of Mg, the modeling focuses on the electricalproperties and the resorption rates, as illustrated by the dissolutionof MgO/Mg double layers. For Mg, the reactive diffusion equation isimposed with zero water flux condition at the bottom surface. For MgO,the reactive equation is imposed with constant water concentration atwater/MgO interface. Across the MgO/Mg interface the concentration andflux of water molecules are continuous. The coupled reactive diffusiveequations for Mg and MgO are solved analytically, and so is theresistance R of the double-layer device. The results of the resistance(per unit length) agree well with experiments for the thickness of MgOencapsulation of 400/800 nm, which has the initial resistance (per unitlength) of 1.04/1.15 Ω/mm, respectively. Computational models are alsodeveloped to solve the coupled reactive diffusive equations,particularly for the complex geometries of the components and devices,including the multi-layer stack of materials for devices.

The critical time t_(c) for open circuit is reached when the resistanceapproaches infinity. For the MgO/Mg double layer, this critical time isobtained analytically, and gives 3.5 and 13 hours for the thickness ofMgO encapsulation of 400 and 800 nm, respectively, which agreesreasonably well with experiments. For multi-layer materials with complexgeometries as in components and devices, computational models aredeveloped and a wide variety components and devices are evaluated.Computational models also give the scaling laws for the dissolution ofdevices. The predictive use of these models highlights the importance ofnanomembrane and thin film device designs.

The effect of stress state (e.g., residual or internal stress) mayaffect the dissolution of devices. This is because the continuousdissolution of materials and devices change their stress state, which inturn affect the dissolution rate. This can be calculated through thecoupled stress-diffusion equation, which is implemented through thefinite element program ABAQUS via its user subroutine.

Metal oxide semiconductor field effect transistors (MOSFETs) formed withSi NMs, SiO₂ dielectrics and Mg electrodes, with encapsulating layers ofMgO and crystallized silk are also studied. The experiments on thedevices show two-stage kinetics in their functional transience. Inparticular, immersion in water for up to ˜90 hours causes negligiblechange in key device characteristics, such as mobility, on/off currentratio (I_(on)/I_(off)) and threshold voltage (V_(th)). Functionaldegradation occurs in a relatively narrow time interval following thisperiod of stable operation. The encapsulation layers define the firsttimescale; the Mg electrodes define the second. These behaviors arestudied in detail by the analytical and computational models, which areimportant to demonstrate that encapsulation layers, which do not provideactive roles in the devices, can be exploited to define the transiencetime in a way that is decoupled from system or device level function.Although different device types require Si NMs with differentthicknesses, the Mg and the encapsulation layers play dominant roles indetermining the timescales for transience in function, for practicalcases explored here.

Modeling of Resorbable Electronic Systems—The analytical andcomputational models for resorbable materials and devices are integratedat the system level to provide CAD tools for the design, fabrication andoperation of resorbable electronics, similar to those currently used forcircuit design in conventional electronics. A computational (oranalytical) module is developed for each type of device. Each moduleincludes the interactions between stress and diffusion. All modules areintegrated and coupled together to predict the key behavior andproperties at the system level, including (1) the time dependence of keyproperties (e.g., electrical resistance) at the device and system levelsand (2) the critical time for the dissolution of each device and that ofthe entire system. The critical time can be actively controlled by usingthe encapsulation layer for devices, such as silk, which is attractivefor this purpose because its solubility in water can be programmed, overseveral orders of magnitude, through control of crystallinity.

Research on Integrated Demonstration Vehicles

The focus of this work is on development of scientific knowledge andengineering concepts for diverse classes of resorbable electronics. Twospecific, integrated demonstration vehicles are pursued: one in digitaland one in analog electronics. The former is a four bit row decoder,incorporating eighty eight transistors, in four inverters and a NORarray with the output of the inverter serving as one of the inputs forthe NOR gate. (See FIG. 79 for the circuit diagram.) The latter is a setof 7 stage CMOS ring oscillators, with operating frequencies from 100kHz to 100 MHz, corresponding to radio frequency operation from the VLFto the VHF bands. These two circuit demonstrators are built using thematerials, manufacturing approaches and resorbable construction modelsdescribed above. Both circuit level electronic properties, andresorption behaviors are studied quantitatively, and compared totheoretical expectation.

EXAMPLE 9

This Example establishes a new, silicon-based electronics technologythat can, in a controlled manner, gradually vanish over time [1].Devices that are ‘transient’ in this sense create applicationpossibilities that cannot be addressed with conventional electronics,such as active implants that exist for medically useful timeframes, butthen completely dissolve and disappear via resorption by the body, orfield-deployable beacons that disappear to avoid recovery. Recent workhas demonstrated a comprehensive set of materials, components,theoretical design tools and manufacturing approaches for complementarymetal oxide semiconductor (CMOS) electronics of this type, together withmultiple different classes of sensors and actuators, two options forpower supply and a wireless control strategy. A transient silicon devicecapable of delivering thermal therapy in an implantable mode to addresschallenges in surgical site infections caused by antibiotic-resistantbacteria and its demonstration in animal models illustrate asystem-level example of this technology [1]. Fully transient RFscavenging devices, and partially transient radio transmitters prove theability to realize basic building blocks of relevance to many militaryapplications [2].

This work builds on previous results on transient electronics with thegoals of expanding (a) the materials and fabrication toolbox fordesigning systems with all components transient (and/or disintegrable),(b) the ability to do higher levels of integration (i.e. beyond a fewdiscrete component circuits) (c) the possible mechanisms for triggeringtransience, especially for large area systems/circuits and non-aqueousconditions. The activities involve (1) development of ZnO as a transientsemiconductor complement to Si, and silk composites as functionalsubstrates, (2) establishment of a foundry-based route to highlyintegrated Si transient electronics, (3) exploratory efforts on severalnew mechanisms for controlling and triggering transience and (4) aworking demonstration device consisting of an RF beacon capable ofpulsed transmission during a fall from an aircraft at high altitude.

ZnO as a Transient Semiconductor

The transient electronics technology base described above lacks twocritical capabilities: (1) routes to piezoelectric and optoelectroniccomponents, and (2) low power schemes for programmed, or ‘triggered’,transience. This work addresses these two issues. The use of ZnO as awater soluble semiconductor, in which hydrolysis affects transience, isexplored. The large, direct bandgap and strong piezoelectric response ofZnO make it a useful complement to Si, for applications in mechanicalenergy harvesters, light emitting diodes and transparent conductors.Previous studies demonstrate that ZnO is water soluble [3,4] andbiocompatible [5], and that it can be used in a variety of semiconductordevices. Efforts here focus on integration of ZnO with otherwater-soluble materials (e.g. Mg, MgO, Si, SiO₂, silk) to yieldcomponents that are fully transient.

Two components are pursued. The first is a thin film transistor (TFT).Past work has demonstrated transparent TFTs, using ZnO deposited in oneof three ways: molecular beam epitaxy, sputtering, or sol-gel/solutionmethods. The electrical and semiconducting properties of ZnO (mobility,resistivity, carrier concentration, etc.) depend on the microstructure,especially grain size [6]. Grain size can be engineered by deposition atan elevated temperature [7], through grain growth during an annealingprocess [8,9], or by adjusting sputtering pressure [10,11]. Theannealing process can also aid in dopant activation [12]. Electricalproperties can also be adjusted by adding O₂ during sputtering [13],though TFTs can still be fabricated by sputtering in Ar only.

Flexible ZnO TFTs can be formed on plastic substrates by sputtering atroom temperature followed by low temperature annealing, or no annealingat all [14,15]. Both top gate and bottom gate TFTs of this type arepossible, although latter designs are more common [13]. This layout isexploited, with a highly doped, transfer printed silicon nanomembrane asthe gate electrode, and a layer of SiO₂ deposited by PECVD as the gatedielectric. Low temperature sputtering of ZnO without annealing formsthe channel, and Mg source and drain electrodes are deposited usingmethods developed for transient silicon devices. Typical etching methodsfor patterning ZnO are incompatible with silk; two strategies that avoidthis constraint are pursued: (1) all additive processing, directly onsilk, using precision shadow masks, and (2) complete fabrication onsilicon substrates, in releasable formats that are compatible withtransfer printing to silk, as a final step.

Electrical properties are measured before and during transience due toimmersion in water. The properties of ZnO TFTs reported in theliterature vary widely. On/off ratios are generally between 10³ and 10⁵.Device mobilities are highly dependent on microstructure, channelgeometry, and processing conditions. Reported values lie between 0.02cm²/(V s) and 4 cm²/(V s). Because development of transient ZnO devicesinvolves many new challenges, targets for performance lie betweenbounding values reported for non-transient versions: 10⁴ for on/offratio and 0.5 cm²/(V s) for mobility.

Silk Composites for Triggered Transience

Transience in silk is based on the physical crosslinks existing withinsilk's crystalline structure. To add more versatility in terms ofcontrol and modes of dissolution, silk composites to enable differentmodalities of transience are explored. A materials toolkit to beinterfaced with the transient electronic building blocks is developed.The key components of this kit to complement silk are:

-   -   Collagen/Gelatin, Hyaluronic Acid—polymers (medically relevant)        for blending with silk that form stable and robust blends based        on prior studies (usually at around 20 wt %, significant        fraction). This also generates more flexible silk substrates.    -   Stable Protease Particles—proteases to degrade silk and        collagen/gelatin can be sequestered in silk micropockets and        nanopockets using established protocols, while the enzymes are        also complexed with small molecule inhibitors or antibodies to        shut off activity until released. Release of active enzyme can        be achieved by heat or pressure. For example, upon local heating        the enzymes can be activated due to the decoupling of the enzyme        to the inhibitor. Similarly, for hyaluronic acid, then        hyaluronidase would be released as opposed to a protease.    -   Protease Inhibitors—inhibitors such as EDTA or antibodies can be        coupled to the silk materials locally, to provide more stable        regions in the matrices where needed, while other regions are        left to be exposed to the enzymes (upon their release) for rapid        degradation of the matrices. This is a tunable feature to        control degradation in selected regions of the material.    -   Elastin Copolymers—responsive to temperature, pH, pressure and        other external factors, can be used to result in coascervation        of the elastin, and thus the release of components, such as the        degrading enzymes.    -   Proteases Responsive to Changes in Heat or pH—thermophilic        enzymes, pH tolerant enzymes, antibody-bound enzymes activated        at specific temperatures.

A set of test materials is generated and evaluated for function anddifferent modes of transience as outlined below.

CMOS Foundry Approach to Transient Circuits

Previously demonstrated classes of transient electronic devicesexploited thin sheets of silicon etched from wafers and then assembledonto substrates of interest (i.e. silk) by transfer printing. Here,fabrication of key elements of the devices (e.g. source, drain and gateelectrodes, and gate dielectrics, for transistors) and interconnectionsbetween them must be performed on the transient substrate. This approachis well suited for demonstrating the concepts and studying the kineticsof transience, but it cannot be used to form systems with high levels ofintegration or sophisticated function.

This work overcomes these limitations by developing foundry-compatiblemanufacturing processes, as a practical pathway to transient electronicsfor realistic applications. Successful development enables arbitrarylevels of integration and complexity in function, in a scheme thatbuilds on established manufacturing infrastructure for siliconintegrated circuits. The two main challenges are to form foundry CMOS inconfigurations that (1) use only transient materials, and (2) enableultrathin, ‘releasable’ forms needed for transfer printing andinterconnection on transient substrates. For the first, modifiedcircuit/device layouts that use doped poly-Si in place of conventionalmetallization for contacts, vias and interconnects are developed. Analternative is to use tungsten, which is transient in water to formtungstic acid, not only for the vias but also for the contacts andinterconnects. For the second challenge, silicon on insulator (SOI)technology is exploited, to allow release of ultrathin active devicesand circuits from the underlying handle wafer, in small-scale chipletsthat are compatible with transfer printing. Keys to success are thedevelopment of etching chemistries and barrier layers that protect theactive devices during release and ‘breakaway’ tether structures (i.e.anchors) that hold the microdevices to the underlying wafer but fractureduring the retrieval step in transfer printing.

Triggered Transience

In the course of this work, alternate means to induce transience in therelevant substrates and devices are explored to identifying low powerschemes for programmed, or ‘triggered’, transience and to inducetransience when no suitable environmental conditions exist (e.g. lack ofwater to induce hydrolysis).

Electrically Induced Transience by Thermocapillarity

For triggered transience in these and other systems, thermocapillaryeffects that, when implemented at the nanoscale, provide a low powermeans to induce flows in thin films may be exploited. Here, temperaturedependence in the surface tension and wetting characteristics lead tomass transport at rates and along directions defined by temperaturegradients (rather than changes in temperature). Such phenomena have beenused previously to move liquid droplets on surfaces, in a programmedmanner in which thermal gradients as small as a few degrees permillimeter are sufficient [24]. Recent work shows that this same physicscan enable meaningful flows in thin films of molecular glasses, attemperature gradients of a few degrees per micron (FIG. 32). Instrategic layouts, implemented with narrow electrodes that provide localJoule heating, such flows can be designed to induce electrical openingsin conducting traces. The result can alter or eliminate function in anintegrated circuit, for example. Alternatively, such flows can exposeunderlying materials to a surrounding environment that affectstransience in the overall system.

The fundamental mechanisms of this process are important to establishinga clear engineering design approach for its use in triggered transience.FIG. 33 shows a schematic diagram of a model that can capture theessential physics. Here, local heating of a film reduces the surfacetension γ, which for most materials is linear with respect to the localtemperature T. The non-uniform temperature produces a thermocapillaryshear stress τ proportional to the gradient of surface tension, whichpulls liquid or viscous solid toward regions of cooler surfacetemperature. The governing equation derived from the Navier-Stokesequation is

${{\frac{\partial h}{\partial t} + {\frac{\partial}{\partial x}\left\lbrack {\frac{\tau\; h^{2}}{2\mu} + {\frac{h^{3}}{3\mu}\frac{\partial}{\partial x}\left( {{\gamma\Delta}^{2}h} \right)}} \right\rbrack}} = 0},$where h(x, y, t) is the position and temperature dependence of thicknessof liquid or viscous film, t is time, and μ is the shear viscosity. Thisequation, together with the appropriate initial and boundary conditions,can be solved numerically to determine the time-dependent filmthickness, which is critical to the triggered transience. An analyticalsolution is also established for the long-time behavior, which canprovide scaling laws, useful for engineering design. For example, it canbe shown that the heat power Q₀, thermal conductivity k_(f) and initialthickness H_(f) of the film, ambient temperature T₀, and coefficients γ₀and γ₁ in surface tension (γ=γ₀+γ₁T) appear in a single combination

$\frac{Q_{0}}{k_{f}{H_{f}\left( {{\gamma_{0}\text{/}\gamma_{1}} + T_{0}} \right)}}$to control the process.Optically Induced Transience

Optically induced transience is explored as a trigger mechanism for theprogrammable dissolution of substrates and devices. The work is based onusing doped silks and silk inks to incorporate the needed triggeringmechanisms.

Silks are doped with optical absorbers. For example, nanoparticle-dopedsilks are used as trigger mechanisms. Recently, the use of goldnanoparticle (Au-NP)-doped silk solutions which were reformed intoseveral formats ranging from conformal coatings [25] to bulk films [26]to 3D photonic crystals [27] were explored (FIG. 34).

Specifically, the optical trigger is envisioned to occur through theplasmonic-resonance enhanced absorption of light. Transience mechanismsaffecting the bulk material (through heat-induced modification of thesilk crystalline matrix) and the interfaces between doped silksubstrates and patterned on-board devices are explored with the end goalof being able to trigger device disintegration with light.

The goal is to develop transient devices (including both in vivo and invitro, i.e., skin mounted and implanted ones) by fabricating (fully orpartially) dissolvable components on doped silk protein substrates andto control the degradation and/or destruction of devices usingphoto-thermal effects triggered by optical illumination. Heatlocalization can be obtained by selective doping of different areas ordifferent layer(s) of the materials and/or by focusing of incidentlight. Triggering degradation from a standoff position (e.g. lasertargeting) is also possible and the parameters for this mode oftriggered transience are explored.

Options for dopants: Both semiconductor (such as CdSe and CdTe) andmetal (Au and Ag) nanoparticles are candidates for dopants. Metals aregenerally better with 1) many mobile electrons and 2) much lower opticalquantum yield. Gold is currently mostly the used material forphoto-thermal applications and probably a better choice for implantationapplications given its biocompatibility. However, it is noted thatsilver nanoparticles generate much more heat (10 times higher) than goldones under plasmon resonance and might be a good option fornon-implantable cases (for example, skin mounted transient devices).

The plasmon resonance for Ag-NPs and Au-NPs is at ˜400 nm and 530 nm,respectively. Due to the high absorption of tissue at those wavelengths,various nanostructures have been developed to shift the plasmonresonance to the red (650-900 nm), to take advantage of the low tissueabsorption and the associated deeper penetration of the light.

For non-implantable applications, either Ag- or Au-NPs may be used andheat generated remotely with blue or green light. The generated heat Q,and local temperature increase ΔT can be analytically calculated by thefollowing equations:

$\begin{matrix}{Q = \left. {\frac{\omega}{8\pi}E_{0}^{2}} \middle| \frac{3ɛ_{0}}{{2ɛ_{0}} + ɛ_{NP}} \middle| {}_{2}{{Im}\left( ɛ_{NP} \right)} \right.} & \lbrack 1\rbrack\end{matrix}$where E₀ is the amplitude of the incident radiation, and ε_(NP) and ε₀are the dielectric constants of the NP and surrounding medium,respectively.

$\begin{matrix}{{\Delta\;{T(r)}} = \frac{V_{NP}Q}{4\pi\; k_{0}r}} & \lbrack 2\rbrack\end{matrix}$where r is the distance from the center of a NP, k₀ is the thermalconductivity of the surrounding medium, and V_(NP) is the NP volume.Combining [1] and [2], the maximum temperature increase is given by(occurs at r=R_(NP), surface of the NP):

$\begin{matrix}{{\Delta\;{T_{\max}\left( I_{0} \right)}} = \left. {\frac{R_{NP}^{2}}{3k_{0}}\frac{\omega}{8\pi}} \middle| \frac{3ɛ_{0}}{{2ɛ_{0}} + ɛ_{NP}} \middle| {}_{2}{{{Im}\left( ɛ_{NP} \right)}\frac{8{\pi \cdot I_{0}}}{c\sqrt{ɛ_{0}}}} \right.} & \lbrack 3\rbrack\end{matrix}$where I₀ is the light intensity, and the temperature increase isproportional to the second power of the NP radius, i.e. ΔT_(max)∂R_(NP)², when the NP radius is much smaller than the incident wavelength. Forinstance, a portable laser pointer with an output power of 15 mW at ˜532nm and the spot size is ˜1 mm (without focusing), which corresponds to alight flux of I₀=1.91 W/cm².

Absorber concentration and wavelength/absorber combinations (optimallymatching resonant absorption peaks of the dopant to the wavelength ofthe light source) are varied to explore this mechanism. (See Table 8overview of generated power and temperature differential in the case ofAu-NP). Temperature increases in excess of 100 degrees C. with portable(e.g. laser pointer) light sources are estimated.

TABLE 8 Particle size Concentration Molar Particle Temperature (nm)(particles per mL) Concentration (nM) Increase (° C.) 5   5 × 10¹³ 83.362.18 10 5.7 × 10¹² 9.5 28.36 15.2^(★) 1.4 × 10¹² 2.3 15.67 20.3   7 ×10¹¹ 1.15 13.93 30.7   2 × 10¹¹ 0.33 8.96 40.3   9 × 10¹⁰ 0.15 7.16 59.42.6 × 10¹⁰ 0.043 4.66 100 5.6 × 10⁹  0.0093 2.79 ^(★)Au-NPs produced andused for Au-NPs doped silk experiments.

Additional concepts include the use of thermal activation coupled withthermocapillarity effects to destroy the circuits by directing light tothermally induce enzyme filled pockets contained in the transientsubstrate to burst.

Transience by Sublimation

Previous work demonstrated transience by hydrolysis. Certain usescenarios require transience in a completely dry environment. Here, thedevices must disappear into a ‘dust-like’ form over time. One embodimentreplaces silk substrates and encapsulants with solid materials thatsublimate at room temperature. Certain waxes offer this characteristic.See FIG. 80. The utility of such materials for a mode of completely drytransience is explored in which sublimation leaves behind only ultrathindevices and interconnects. Layouts and layer thicknesses are engineeredto lead to spontaneous fracture and disintegration upon transience ofthe substrate, thereby rendering the dust format.

Transience by Mechanical Impact

Impact-triggered transience can be relevant for certain types ofmechanically induced transience activation options (e.g., bending,chewing, etc.).

Silk can be blended with a high content of collagen (gelatin) orhyaluronic acid to generate integrated and stable materials that provideexcellent mechanical and performance characteristics. The stableprotease pockets (micro or nano, or even core shell electrospun systems)can be blended into the materials as part of the fabrication process,and upon mechanical disruption, would be ruptured and release theenzymes for functional degradation of the substrate, with the reactionrate being dependent upon enzyme type, concentration, state ofactivation and substrate surface area. The enzymes initially target themore labile components, such as the gelatin and hyaluronic acid(hyaluronidase), while thereby opening up the silk structure for accessby additional proteases (e.g., chymotrypsin or protease XIV). Similarly,elastin copolymers used to link silk domains into functional materials,would be susceptible to physical impact, resulting in materialscontraction and release of enzymes (as in drug delivery modes used withelastin) to activate the degradation process. All of the above optionscan also be approached as coatings on silk tiles or pieces, to providemore rapid break up of larger materials, followed by slower degradationof the entire structure.

In another embodiment, one or more pockets or reservoirs may belithographically patterned into the substrate, and a transforming liquidor material may be enclosed in the pocket or reservoir. FIG. 130A-130Bschematically illustrates a form of transience by mechanical impactutilizing this modality. FIG. 130A generally shows a transient device1300 falling toward the ground, G, along the dashed arrow at an initialtime, A, a later time, B, and upon impact with the ground, C. These sametimeframes are shown in more detail in FIG. 130B, wherein transientdevice 1300 includes a substrate 1302, one or more inorganicsemiconductor components 1304, one or more metallic conductor components1304, and an actuator 1306 in the form of a pocket or reservoir. Uponimpact with ground, G, the pocket or reservoir 1306 forms cracks 1310,or is otherwise breached or ruptured, allowing contents to escape, forexample as puddles of liquid 1312. The liquid may, for example, bewater, PBS solution, an enzymatic solution, an acid, a base, anon-aqueous solvent or combinations of these.

RF Beacon Demonstrator Device

A transient demonstrator device consisting of a beacon equipped with RFtransmission capabilities, designed to fall from an aircraft at analtitude of 60,000 ft (FIG. 81) is described. The beacon sends amodulated RF pulsed signal every ˜1 s to the aircraft during its fall.The aircraft uses state-of-the-art receiver systems to capture thesignal.

The requirements of the device drive the choice of transienttechnologies. The time for falling is between 1000 and 2000 s, dependingon the details. The transmission power can be estimated using the Friisfree-path transmission equation [19]. If the receiver on the aircrafthas a sensitivity of −150 dBm [20], the receiver antenna is directionalwith a gain of 20 dBi, the transmit antenna on the beacon isomnidirectional with a directional gain of 0 dBi, the transmission rangeis 60,000 feet and the carrier frequency is 433 MHz, then transmit powerof the beacon can be as small as 1×10⁻⁹ W. In reality, the requiredpower must overcome practical constraints of diffraction and atmosphericabsorption. A conservative estimate, based on RF transmitters used tomonitor the migration of birds, is for an output power of 10 mW with atransmission range up to 10 km [21]. At a distance of 60,000 feet, atransmitter output power of ˜30 mW may be needed. Assuming that thepulse width generated by the beacon is 20 ms, the total energy consumedduring the fall is ˜30 mJ. This power can be provided by a cell batteryor a solar cell. A cell battery has a typical capacity of 15 mAh at a1.3×1.3 cm² area. A silicon-based solar cell with ˜20% efficiency cangenerate 100 mW/cm² from direct sunlight [22]. Both options are pursued.

The beacon design (2×2 cm) exploits a two stage structure (FIG. 82). Thefirst stage generates a high frequency radio signal (30 MHz to 433 MHz),and the second stage modulates and amplifies this signal. The resultingsignal is transmitted by a whip or loop antenna [23] after passingthrough an impedance matching circuit. The illustration in FIG. 82 showsthe solar cell power option. The demonstration devices involve anassembly of commercial components on a transient substrate and withtransient interconnects, i.e. a ‘transient printed circuit board’,together with a transient antenna.

In summary, the outcomes of this work: specify and qualify depositionapproaches for ZnO, in a manner that is compatible with other,previously demonstrated, transient materials; construct and demonstrateZnO transient electronic components, including diodes and transistors,and compare transient behaviors to theoretical models; construct anddemonstrate structures for controlled thermocapillarity in thin films ofmolecular glasses; implement thermocapillary triggers for transience ina device structure; compare behavior to theory; implementthermocapillary triggers for transience in fully transient structuresthat include both ZnO and Si components; develop circuit/device layoutsfor CMOS foundry fabrication; prototype designs using Si processes;demonstrate small-scale chiplets compatible w/transfer printing;implement optically triggered transience with silk+Au-NP substrates withintegrated devices; demonstrate optical triggers for substratedegradation; demonstrate optically triggered degradation of devices;demonstrate the manufacturing of silk/protease compounds infree-standing film formats; demonstrate manufacturing andcharacterization of silk substrates for transient electronics containingmicropockets; demonstrate the integration of electronic devices on thecomposite substrates manufactured; perform test and validation ofsilk-composite transient modalities and times, specifically impacttransience; integrate devices on substrates for impact driventransience; demonstrate impact triggered transience; design andprototype RF Beacon devices; manufacture RF beacons on resorbablesubstrates; demonstrate Si solar cell and battery interfaces; acquiresubliming wax and perform material assessment; manufacture transientelectronic components on subliming wax; and demonstrate transience bysublimation.

EXAMPLE 10

Water Soluble ZNO TFTs and Energy Harvesters

The Example demonstrates water soluble ZnO thin film transistors (TFTs),capacitors and energy harvesters. FIGS. 83 and 84 show schematicdiagrams of ZnO thin film transistor and capacitor arrays andcomponents. The transistors contain Mg source, drain and gateelectrodes, a SiO₂ gate dielectric and ZnO semiconductors. Thecapacitors include a substrate having a bottom Mg electrode disposedthereon, a ZnO semiconductor disposed on the bottom Mg electrode, and atop Mg electrode disposed on the ZnO layer. FIG. 85A-85D shows plots andmicrographs of ZnO film properties. For example, a powder X-raydiffraction plot and crystal structure representation of ZnO (FIG. 85A),a voltage versus displacement curve for ZnO films when power is on andoff (FIG. 85B), an electron micrograph of a ZnO film (FIG. 85C), and atime versus bias curve for a ZnO film (FIG. 85D) are shown. Theestimated grain size of the ZnO film is about 25 nm. Additionalelectrical characterization of the ZnO transistors is provided in thecurrent versus voltage plots of FIG. 86, which show on/off ratio >˜10³,V_(th) (threshold voltage) ˜2V, Mobility ˜1 cm²/V·s. For the ZnO energyharvesters under stress/strain (FIG. 87(c)), time versus voltage (FIG.87(a)) and current (FIG. 87(b)) plots show P=I×V=6 nW, Powerdensity=0.15 μW/cm², and Strain Rate=1.5 cm/sec. Photographic timelapses of ZnO transistor arrays and energy harvester arrays on silksubstrates dissolving in water over the course of one hour are shown inFIG. 88. FIG. 89 shows plots of performance of a ZnO transistor (FIG.89(a)) during transience. Performance is measured as mobility over time(FIG. 89(b)) and current versus voltage (FIG. 89(c)). FIG. 90 shows amodel of current from a ZnO energy harvester with Mg contacts on a silksubstrate:

$I = {4{\pi^{2}\left( {- \overset{\_}{e}} \right)}\frac{A_{ZnO}}{T}\frac{{\overset{\_}{EI}}_{silk}\left( {y_{ZnO} - y_{neutral}} \right)}{{\overset{\_}{EI}}_{comp}L_{silk}}\sqrt{\frac{\delta_{\max}}{L_{silk}}}{\sin\left( \frac{2\pi\; t}{T} \right)}}$where

ē—the effective piezoelectric constant

T—the period of the loading and the current

$A_{ZnO} = {\frac{n_{ZnO}}{2}\left( {{w_{{ZnO},1}l_{{ZnO},1}} + {w_{{ZnO},2}l_{{ZnO},2}}} \right)}$—the area of the ribbons for each group

w_(ZnO,1),l_(ZnO,1),w_(ZnO,2),l_(ZnO,2)—the inplane sizes of the ribbons

n_(ZnO)—the number of the ribbons

For ē=−0.45 C/m² (the same order with its value from the materiallibrary), the maximum current from theory equals the experimentalresult, l_(max)=0.55 nA. FIG. 91 shows a model of voltage from a ZnOenergy harvester with Mg contacts on a silk substrate:

$V = {4{\pi\left( \frac{- \overset{\_}{e}}{\overset{\_}{k}} \right)}\frac{{\overset{\_}{EI}}_{silk}{t_{ZnO}\left( {y_{ZnO} - y_{neutral}} \right)}}{{\overset{\_}{EI}}_{comp}L_{silk}\sqrt{1 + {\left( {t_{ZnO}T} \right)^{2}\text{/}\left( {\pi\; A_{ZnO}R\overset{\_}{k}} \right)^{2}}}}{\sqrt{\frac{\delta_{\max}}{L_{silk}}}\left\lbrack {{e^{{- \frac{2t_{ZnO}}{A_{ZnO}{Rk}}}t}\sin\mspace{14mu}\theta} + {\sin\left( {\frac{2\pi\; t}{T} - \theta} \right)}} \right\rbrack}}$where

T—the period of the loading and the voltage

k—the dielectric constant

R—the resistence of the voltmeter

For k=9.86×10⁻¹¹ C/(V·m) (from the material library) and R=5×10⁹Ω, themaximum voltage from theory equals the experimental results,V_(max)=1.14 V.

Electrically Triggered Transience:

RF Induced Electrochemistry

FIG. 92 shows a schematic diagram of an electrochemical measurement setup (FIG. 92(a)) and a plot of current versus voltage for Fe, Al and Cuhaving an electrode area of about 0.2 cm² (FIG. 92(b)). Electrochemicalstudies of Fe, Al and Cu showed that dissolution rates can besignificantly expedited upon applying anodic voltage. Table 9 showsestimated dissolution times for Fe, Al and Cu. It should be noted,however, that Al and Cu exhibited non-uniform dissolution.

TABLE 9 Fe Al Cu Estimated average current [mA] 0.3 0.10 0.05 at 2 V ofmetal with 0.2 cm² area Estimated dissolution time [hour] 0.2 1.5 2 at 2V of metal with 100 nm thickness and 0.2 cm² area

FIG. 93 shows schematic diagrams of a circuit demonstration whereinanodic dissolution of a first current path via electrochemistry triggerscurrent to travel a secondary current path that lights an LED. FIG. 94shows photographs of the device described schematically in FIG. 93before (FIG. 94(a)) and after (FIG. 94(b)) anodic dissolution. Thedissolution response occurs in 4 seconds when the selectively removablemetal is 50 μm wide and 50 nm thick.

Solar Powered RF Beacon and Transient PCBs

FIG. 95 shows a schematic diagram of a transient RF beacon including asolar cell, a low frequency signal generator, a switcher, a highfrequency signal generator, and an impedance matching unit. The signaltransmitted by the beacon is received at a receiver station including anRF amplifier and a signal analyzer. The entire beacon transmitter isbased on transient interconnects (Mg) and substrate (silk fibroin film),and power is provided by silicon-based solar cells. A high frequencysignal (160 MHz) is modulated by a low frequency signal (1 Hz). Thereceiver station contains a high gain antenna and a state-of-the-art RFamplifier that can detect very small signals. The beacon transmittercontains a miniaturized coil antenna (whip antenna).

FIG. 96A-96D shows a schematic diagram of a transient dual-sided printedcircuit board showing the front side (FIG. 96A), the back side (FIG.96B), and the alignment of the front side and the back side (FIGS.96C-96D). In a first step, Mg is deposited through a shadow mask on asilk substrate. Holes are then punched through the via pads, and thefront and back components are connected with silver paste. FIG. 97A-97Bshows a schematic diagram of a dual-sided solar powered RF beacon (FIG.97A) and photographs of the dual-sided solar powered RF beacon (FIG.97B). FIG. 98 shows photographs of the solar powered RF beacon attachedto a Mg antenna that communicates with an antenna of a signal analyzerof a receiver station through an antenna.

FIG. 99 shows a solar cell having a thickness of about 3 μm (FIG. 99(a))and a plot showing current and power versus voltage for the solar cell(FIG. 99(b)). For comparison, FIG. 99(c) shows a plot of current versusvoltage for the ˜15 μm thick solar cell used in the beacon of FIG. 98.The results demonstrate the possibility of thinner Si solar cells (˜3μm) for integration with transient RF beacon transmitters.

FIG. 100 shows an omnidirectional Mg coil antenna having a centralfrequency at 160 MHz for use in solar powered RF beacons. FIG. 101provides graphs of beacon signal output when the device is powered by aDC power supply at high power (FIG. 101(a)) and a transient solar cellat lower power (FIG. 101(b)). FIG. 102 provides graphs of the signalreceived by the receiver from the beacon at a distance of 5 meters whenpowered by a DC power supply (FIG. 102(a)) and at a distance of 10 cmwhen powered by a transient solar cell (FIG. 102(b)). FIG. 103 is aphotograph of a transient RF beacon transmitter on a silk substrateusing commercial solar cells.

Non-Aqueous Transient Materials

FIG. 80 shows a time lapse photograph of sublimable wax over the courseof 10 days. Transient devices incorporating sublimable wax may befabricated by melting the solid form of the wax at about 80° C., thencooling it to room temperature or spin casting the wax from an organicsolvent, such as hexanes, and drying the spun wax for a few hours. Usingthe melting method, it is possible to make any type of shape andthickness may be controlled. However, the wax tends to crumble into finepieces and break easily. Further, the physical vapor deposition ofmetals is not possible due to the extremely high vapor pressure. Usingthe spin casting method, the resulting films disappear quickly, e.g.,within about 24 hours. The thin geometry makes the substrate too fragileto handle and a separate support is desirable. In addition, the filmstend to exhibit micro/nano porosity. FIG. 104 shows a photograph of anelectrospinning apparatus for generating sublimable materials for use intransient devices.

Sublimable materials include, without limitation, dry ice (CO₂),naphthalene (C₁₀H₈), ammonium chloride (NH₄Cl), iron chloride (FeCl₃),aluminum chloride (AlCl₃), melamine (C₃H₆N₆), nickelocene, camphor(C₁₀H₁₆O), caffeine (C₈H₁₀N₄O₂), and other organic crystals, anddisappearing wax. These materials may be used individually, incombination with each other, and/or in composites that incorporate smallmolecule, sublimable materials as fibers in mats that provide structuralsupport.

FIG. 105A-105B provides photographs of exemplary electrospun materials.FIG. 105A, left, shows a dry electrospun PVA mat and, right, a hydratedelectrospun PVA mat. FIG. 105B, left, shows a cotton gauze and, right,an electrospun bovine fibrinogen mat.

Dissolution Kinetics of Transient Metals

The dissolution kinetics of transient metals were studied. Transientmetals are degradable in a biological environment (pH 6-8), such as thehuman body, neutral water, seawater, and the like, as well asbioresorbable, environmentally benign and compatible with electronicdevices.

FIG. 106A-106B shows plots of the approximate time for electrical opensto appear in metal lines for various metals (Mg, Zn, AZ31B (a Mg alloycontaining Al: 3%, Zn: 1%), Fe and W) deposited at a thickness of 300 nm(FIG. 106A) and for Fe having thicknesses of 150 nm and 300 nm (FIG.106B). Table 10 summarizes the results:

TABLE 10 R/L (at 20 Ω/mm) Mg Zn AZ31B Fe W Time (hour) 0.5 1 3 7 15

FIG. 107 provides schematic diagrams of dissolution mechanisms. FIG.107A involves water diffusion through pores and defects of a metal anddisintegration or flaking of metal chunks that break from the surface.In addition, FIG. 107C shows that the metal gets thinner and more porousupon dissolution. In a typical dissolution mechanism, metals react withwater according to the reactions:Mg+2H₂O→Mg(OH)₂+H₂4Fe+6H₂O+30₂→4Fe(OH)₃Zn+H₂O→Zn(OH)₂+H₂2W+2H₂O+30₂→2H₂WO₄

FIG. 107B illustrates a mechanism involving dissolution withoutdisintegration. This reactive diffusion model involves surface reactionsand water diffusion into metal, defined by two constant parameters, k(reaction) and D (diffusion). The model does not incorporatedisintegration/flaking.

A general dissolution phenomenon is characterized by dissolution that isnot necessarily uniform. In studies of metals patterned on glass with a5 nm adhesion layer of Ti or Cr, changes in resistance over time comefrom both thickness and porosity changes. Because film quality can beinfluenced by deposition conditions, the conditions were held constantfor each metal.

FIG. 108 plots theoretical and experimental results showing metaldissolution over time in accordance with FIG. 107B. The model fitsfaster dissolution metals (Mg, Zn and Mg alloys, but deviates for slowerdissolution metals (W, Fe (300 nm)). Disintegration/flaking is likely tooccur right after dissolution starts for the fast dissolution metalsproviding similar kinetics through the whole dissolution time, andtherefore using constant k and D would not introduce significantdeviation for theoretical estimates.

Although delamination has a higher probability of occurring in thickerfilms, especially when they are subjected to longer immersion times,flaking was only observed for thin (100 nm) tungsten films, possibly dueto compressive residual stress developed during the sputtering process.It is possible that the dissolution kinetics of tungsten might differbetween the initial and later stages. For example, tungsten mayuniformly dissolve at the initial stage, with disintegration/flakingbecoming significant at the later stage. Using constant parameters k andD to fit experimental data at the later stage would over-estimatedissolution rates at the initial stage. FIG. 109 provides photographsshowing initial dissolution of tungsten traces with uniform surfacemorphology during the first 6 hours (FIG. 109(a)) followed bynon-uniform surface morphology suggesting disintegration/flaking oftungsten traces becoming significant at later times, e.g., 18 hours,(FIG. 109(b)), as well as examples of tungsten delamination (FIG.109(c)), tungsten delamination and cracking (FIG. 109(d)), and tungstenflaking in PBS solution (FIG. 109(e)). It was possible to reduceresidual stress by increasing the sputtering Ar pressure, changing todifferent substrates (glass to Si), and using a Cr adhesion layer topromote the stable alpha W phase with a better lattice match (both BCCphases).

FIG. 110 shows photographs of 100 nm W films before dissolution in DIwater (FIG. 100(a)) and after 20 hours of dissolution (FIG. 110(b)).Tungsten dissolved in DI water with good behavior, and much faster inPBS solution with flaking of the thin film. A dense W thin film became aporous network after dissolution. XPS did not show WO3 formation on thesurface during dissolution. FIG. 110(c) shows the dissolution behaviorof a 100 nm W film of different widths.

The dissolution of AZ31B was observed to be non-uniform. AZ31Beventually fully dissolved, with dissolution being much faster in PBSsolution. XPS results showed MgO/Mg(OH)₂ on the surface exposed tosolution. FIG. 111 shows an AZ31B film before dissolution (FIG. 111(a))and after 2 hours of dissolution in DI water (FIG. 111(b)). FIG. 111(c)shows the dissolution behavior of 300 nm AZ31B Mg alloy in DI water andPBS solution.

The dissolution of Zn was observed to be non-uniform. Zn eventuallyfully dissolved, with dissolution being faster in DI water because theformation of phosphates slows down dissolution. XPS could not beperformed on Zn due to low vapor pressure. FIG. 112 shows an Zn filmbefore dissolution (FIG. 112(a)) and after 2 hours of dissolution in DIwater (FIG. 112(b)). FIG. 112(c) shows the dissolution behavior of 300nm Zn in DI water and PBS solution.

The dissolution of Fe was observed to be non-uniform. Fe began rustingat some locations and the rust products did not fully dissolve up toseveral days. Fe dissolution is very sensitive to deposition conditionswith thin froms having smaller/denser grains showing no resistancechange after several days. Fe dissolves faster in PBS solution. XPSshowed surface products associated with rust, Fe₂O₃/Fe(OH)₃. FIG. 113shows an Fe film with coarse/dense grains (FIG. 112(a)) that corrodefaster than the finer grains of FIG. 112(b). FIG. 112(c) shows thedissolution behavior of 150 nm Fe in DI water and PBS solution.

FIG. 114A-114D summarizes metal dissolution data in DI water (pH 6.8)and in phosphate buffer solution (pH 7.4). For comparison, thedissolution properties of Si in PBS are shown in FIG. 115, andsummarized in Table 11.

TABLE 11 pH 6 @ pH 8 @ pH 8 @ pH 10 @ pH 6 @ RT 37° C. RT 37° C. RTDiss. 0.6 nm/day 1.3 nm/day 8 nm/day 17.5 nm/day 14 nm/ rate hour**Dissolution rate in pH 7.4 - 4.5 nm/day (37° C.), 2 nm/day (RT)Transient Devices in Thermal Therapy

Transient devices may be implanted at a surgical site to administerthermal therapy to counter bacterial infection. FIG. 116 shows aphotograph (FIG. 116(a)) and infrared image (FIG. 116(b)) of a transientthermal therapy device having a Mg inductor coil and a Mg resistor(˜300Ω) on a silk substrate. At 49 MHz, the device operates at about 25%power. This device was implanted in mouse models with no sign ofinfection after one week.

FIG. 117 shows a photograph of in vitro evaluations of bacterialcultures. Tissues were weighed (70-80 mg for each sample) andhomogenized in DPBS (2.5-3 mL) and diluted 10⁵, 10⁶ and 10⁷ times. 50 μLof each dilution was used to plate 2 TSB agar plates. After 24 hours ofincubation at 37° C., colonies on the plates were counted and listed inTable 12, where (H) contained no implant, and no injection of healthytissue, (D) contained the implanted device, and (B1 and B2) wereinjected with bacteria:

TABLE 12 dilution samples 10⁵ 10⁶ 10⁷ H 0 0 0 D 0 0 0 B1 25.5 3.5 0 B236.5 4 1No bacterium was observed on H or D.Summary of Earlier Work

FIG. 118 provides a schematic diagram of fully formed transient MOSFETSand integrated circuits on silk substrates. FIG. 119 providesphotographs showing a time lapse of the dissolution of the fully formedtransient MOSFETS and integrated circuits of FIG. 118. FIG. 120 providesphotographs and performance plots of fully formed transient MOSFETS andintegrated circuits. In particular, nmos inverter arrays and logic gateswere fabricated using photolithography and electrically characterized.FIG. 121 provides photographs and performance plots of transient RFelectronics: (a-b) rectifiers, (c-d) capacitors, (e-f) inductors, and(g-h) resistors. FIG. 122 provides photographs and performance plots oftransient RF electronics in the form of 3-stage cMOS ring oscillators.FIG. 123 provides photographs of Fe electrode cMOS oscillators. FIG. 124provides photographs, schematics and plots relating to Fe electrode cMOSlogic circuits (NAND, NOR). FIG. 125 provides photographs of logiccircuit transformation (logic circuits to cMOS inverter). FIG. 126provides plots showing the performance of Mg alloy (AZ31B, Al 3%, ZN 1%)TFTs. FIG. 127 provides photographs, performance plots, and time lapsedissolution studies of transient RF electronics having antennas. FIG.128 provides schematics, photographs, and time lapse dissolution studiesof a transient RF device incorporating components from FIGS. 121-127.

EXAMPLE 11

This Example discloses an electrochemical transient power supply. In anembodiment of the electrochemical transient power supply, Mg—Fe orMg—Pt(Au) metal couples form a transient battery upon Mg dissolution toform an in-situ micro-heater. FIG. 129A-129C shows a schematic of theelectrochemical transient power supply (FIG. 129A) and performance plotsshowing voltage and discharge current over time for the metal couples(FIGS. 129B-129C).

STATEMENTS REGARDING INCORPORATION BY REFERENCE AND VARIATIONS

All references cited throughout this application, for example patentdocuments including issued or granted patents or equivalents; patentapplication publications; and non-patent literature documents or othersource material; are hereby incorporated by reference herein in theirentireties, as though individually incorporated by reference, to theextent each reference is at least partially not inconsistent with thedisclosure in this application (for example, a reference that ispartially inconsistent is incorporated by reference except for thepartially inconsistent portion of the reference).

U.S. Provisional Application No. 61/565,907, filed Dec. 1, 2011, andAppendices A and B, submitted herewith, are each hereby incorporated byreference in their entireties.

The following references relate generally to flexible and/or stretchablesemiconductor materials and devices and are each hereby incorporated byreference in its entirety: U.S. patent application Ser. No. 12/778,588,filed on May 12, 2010, PCT International Application No. PCT/US05/19354,filed Jun. 2, 2005 and published under No. WO2005/122285 on Dec. 22,2005, U.S. Provisional Patent Application No. 61/313,397, filed Mar. 12,2010, U.S. patent application Ser. No. 11/851,182, filed Sep. 6, 2007and published under No. 2008/0157235 on Jul. 3, 2008, and PCTInternational Application No. PCT/US07/77759, filed Sep. 6, 2007 andpublished under No. WO2008/030960 on Mar. 13, 2008.

The following references relate generally to bioresorbable substratesand methods of making bioresorbable substrates and are each herebyincorporated by reference in its entirety: PCT Patent ApplicationPCT/US03/19968 filed Jun. 24, 2003, PCT Patent ApplicationPCT/US04/000255 filed Jan. 7, 2004, PCT Patent ApplicationPCT/US04/11199 filed Apr. 12, 2004, PCT Patent ApplicationPCT/US05/20844 filed Jun. 13, 2005, and PCT Patent ApplicationPCT/US06/029826 filed Jul. 28, 2006.

The terms and expressions which have been employed herein are used asterms of description and not of limitation, and there is no intention inthe use of such terms and expressions of excluding any equivalents ofthe features shown and described or portions thereof, but it isrecognized that various modifications are possible within the scope ofthe invention claimed. Thus, it should be understood that although thepresent invention has been specifically disclosed by preferredembodiments, exemplary embodiments and optional features, modificationand variation of the concepts herein disclosed may be resorted to bythose skilled in the art, and that such modifications and variations areconsidered to be within the scope of this invention as defined by theappended claims. The specific embodiments provided herein are examplesof useful embodiments of the present invention and it will be apparentto one skilled in the art that the present invention may be carried outusing a large number of variations of the devices, device components,and method steps set forth in the present description. As will beobvious to one of skill in the art, methods and devices useful for thepresent methods can include a large number of optional composition andprocessing elements and steps.

When a group of substituents is disclosed herein, it is understood thatall individual members of that group and all subgroups, including anyisomers, enantiomers, and diastereomers of the group members, aredisclosed separately. When a Markush group or other grouping is usedherein, all individual members of the group and all combinations andsubcombinations possible of the group are intended to be individuallyincluded in the disclosure. When a compound is described herein suchthat a particular isomer, enantiomer or diastereomer of the compound isnot specified, for example, in a formula or in a chemical name, thatdescription is intended to include each isomers and enantiomer of thecompound described individually or in any combination. Additionally,unless otherwise specified, all isotopic variants of compounds disclosedherein are intended to be encompassed by the disclosure. For example, itwill be understood that any one or more hydrogens in a moleculedisclosed can be replaced with deuterium or tritium. Isotopic variantsof a molecule are generally useful as standards in assays for themolecule and in chemical and biological research related to the moleculeor its use. Methods for making such isotopic variants are known in theart. Specific names of compounds are intended to be exemplary, as it isknown that one of ordinary skill in the art can name the same compoundsdifferently.

The following references relate generally to fabrication methods,structures and systems for making electronic devices, and are herebyincorporated by reference to the extent not inconsistent with thedisclosure in this application.

It must be noted that as used herein and in the appended claims, thesingular forms “a”, “an”, and “the” include plural reference unless thecontext clearly dictates otherwise. Thus, for example, reference to “acell” includes a plurality of such cells and equivalents thereof knownto those skilled in the art, and so forth. As well, the terms “a” (or“an”), “one or more” and “at least one” can be used interchangeablyherein. It is also to be noted that the terms “comprising”, “including”,and “having” can be used interchangeably. The expression “of any ofclaims XX-YY” (wherein XX and YY refer to claim numbers) is intended toprovide a multiple dependent claim in the alternative form, and in someembodiments is interchangeable with the expression “as in any one ofclaims XX-YY.”

Application Publication Publication Patent No. Filing Date No. Date No.Issue Date 11/115,954 Apr. 27, 2005 2005/0238967 Oct. 27, 2005 7,195,733Mar. 27, 2007 11/145,574 Jun. 2, 2005 2009/0294803 Dec. 3, 20097,622,367 Nov. 24, 2009 11/145,542 Jun. 2, 2005 2006/0038182 Feb. 23,2006 7,557,367 Jul. 7, 2009 11/421,654 Jun. 1, 2006 2007/0032089 Feb. 8,2007 7,799,699 Sep. 21, 2010 11/423,192 Jun. 9, 2006 2009/0199960 Aug.13, 2009 7,943,491 May 17, 2011 11/423,287 Jun. 9, 2006 2006/0286785Dec. 21, 2006 7,521,292 Apr. 21, 2009 11/465,317 Aug. 17, 2006 — — — —11/851,182 Sep. 6, 2007 2008/0157235 Jul. 3, 2008 — — 11/585,788 Sep.20, 2007 2008/0108171 May 8, 2008 7,932,123 Apr. 26, 2011 11/981,380Oct. 31, 2007 2010/0283069 Nov. 11, 2010 7,972,875 Jul. 5, 201112/398,811 Mar. 5, 2009 2010/0002402 Jan. 7, 2010 — — 12/405,475 Mar.17, 2009 2010/0059863 Mar. 11, 2010 8,198,621 Jun. 12, 2012 12/418,071Apr. 3, 2009 2010/0052112 Mar. 4, 2010 — — 12/778,588 May 12, 20102010/0317132 Dec. 16, 2010 — — 12/916,934 Nov. 1, 2010 2012/0105528 May3, 2012 — — 12/968,637 Dec. 15, 2010 2012/0157804 Jun. 21, 2012 — —11/675,659 Feb. 16, 2007 2008/0055581 Mar. 6, 2008 — — 12/892,001 Sep.28, 2010 2011/0230747 Sep. 22, 2011 — — 12/669,287 Jan. 15, 20102011/0187798 Aug. 4, 2011 — — 11/001,689 Dec. 1, 2004 2006/0286488 Dec.21, 2006 7,704,684 Apr. 27, 2010 12/564,566 Sep. 22, 2009 2010/0072577Mar. 25, 2010 7,982,296 Jul. 19, 2011 12/844,492 Jul. 27, 20102010/0289124 Nov. 18, 2010 8,039,847 Oct. 18, 2011 11/782,799 Jul. 25,2007 2008/0212102 Sep. 4, 2008 7,705,280 Apr. 27, 2010 12/996,924 Dec.8, 2010 2011/0147715 Jun. 23, 2011 — — 12/947,120 Nov. 16, 20102011/0170225 Jul. 14, 2011 — — 12/372,605 Feb. 17, 2009 — — — —13/441,598 Apr. 6, 2012 — — — — 13/441,618 Apr. 6, 2012 — — — —13/472,165 May 15, 2012 — — — — 13/486,726 Jun. 1, 2012 — — — —13/549,291 Jul. 13, 2012 — — — — 13/596,343 Aug. 28, 2012 — — — —

Unless defined otherwise, all technical and scientific terms used hereinhave the same meanings as commonly understood by one of ordinary skillin the art to which this invention belongs. Although any methods andmaterials similar or equivalent to those described herein can be used inthe practice or testing of the present invention, the preferred methodsand materials are now described. Nothing herein is to be construed as anadmission that the invention is not entitled to antedate such disclosureby virtue of prior invention.

Whenever a range is given in the specification, for example, a range ofintegers, a temperature range, a time range, a composition range, orconcentration range, all intermediate ranges and subranges, as well asall individual values included in the ranges given are intended to beincluded in the disclosure. As used herein, ranges specifically includethe values provided as endpoint values of the range. As used herein,ranges specifically include all the integer values of the range. Forexample, a range of 1 to 100 specifically includes the end point valuesof 1 and 100. It will be understood that any subranges or individualvalues in a range or subrange that are included in the descriptionherein can be excluded from the claims herein.

As used herein, “comprising” is synonymous and can be usedinterchangeably with “including,” “containing,” or “characterized by,”and is inclusive or open-ended and does not exclude additional,unrecited elements or method steps. As used herein, “consisting of”excludes any element, step, or ingredient not specified in the claimelement. As used herein, “consisting essentially of” does not excludematerials or steps that do not materially affect the basic and novelcharacteristics of the claim. In each instance herein any of the terms“comprising”, “consisting essentially of” and “consisting of” can bereplaced with either of the other two terms. The inventionillustratively described herein suitably can be practiced in the absenceof any element or elements, limitation or limitations which is notspecifically disclosed herein.

One of ordinary skill in the art will appreciate that startingmaterials, biological materials, reagents, synthetic methods,purification methods, analytical methods, assay methods, and biologicalmethods other than those specifically exemplified can be employed in thepractice of the invention without resort to undue experimentation. Allart-known functional equivalents, of any such materials and methods areintended to be included in this invention. The terms and expressionswhich have been employed are used as terms of description and not oflimitation, and there is no intention that in the use of such terms andexpressions of excluding any equivalents of the features shown anddescribed or portions thereof, but it is recognized that variousmodifications are possible within the scope of the invention claimed.Thus, it should be understood that although the invention has beenspecifically disclosed by preferred embodiments and optional features,modification and variation of the concepts herein disclosed can beresorted to by those skilled in the art, and that such modifications andvariations are considered to be within the scope of this invention asdefined by the appended claims.

What is claimed is:
 1. A passive transient electronic device comprising:a substrate; and one or more inorganic components supported by saidsubstrate; wherein said one or more inorganic components independentlycomprise a selectively transformable material, wherein said one or moreinorganic components have a preselected transience profile in responseto an external or internal stimulus; wherein at least partialtransformation of said one or more inorganic components provides aprogrammable transformation of the passive transient electronic devicein response to said external or internal stimulus and at a pre-selectedtime or at a pre-selected rate, wherein said programmable transformationprovides a change in function of the passive transient electronic devicefrom a first condition to a second condition; wherein change in functiontransforms said one or more inorganic components from: (i) a NOR gate toa NAND gate; (ii) an inverter to an isolated transistor; (iii) aresistor to a diode; (iv)a NAND gate to an inverter; (v) a NOR gate toan isolated transistor; or (vi) a NAND gate to an isolated transistor.2. The device of claim 1, wherein said programmable transformation ofsaid one or more inorganic components occurs by a process other thanbioresorption.
 3. The device of claim 1, wherein said programmabletransformation of said one or more inorganic components occurs: (i) by aphase change, wherein at least a portion of said one or more inorganiccomponents undergo at least partial sublimation or melting; (ii) via atleast partial dissolution of said one or more inorganic semiconductorcomponents or said one or more metallic conductor components in asolvent; (iii) via at least partial hydrolysis of said one or moreinorganic semiconductor components or said one or more metallicconductor components; (iv) via at least partial etching or corrosion ofsaid one or more inorganic semiconductor components or said one or moremetallic conductor components; (v) by a photochemical reaction whereinat least a portion of said one or more inorganic semiconductorcomponents or said one or more metallic conductor components absorbelectromagnetic radiation and undergo an at least partial chemical orphysical change (vi) by an electrochemical reaction; or (vii) by achemical or physical change wherein at least a portion of said one ormore inorganic semiconductor components or said one or more metallicconductor components is converted to an insulator, thereby providingsaid programmable transformation of the passive transient electronicdevice.
 4. The device of claim 1, wherein said preselected transienceprofile is characterized by a transformation of 0.01% to 100% of saidone or more inorganic components over a time interval selected from therange of 1 ms to 2 years, thereby providing said programmabletransformation of the passive transient electronic device.
 5. The deviceof claim 1, wherein said preselected transience profile is characterizedby a decrease in electrical conductivity of said one or more inorganiccomponents at a rate selected over the range of 10¹⁰ S·m⁻¹ s⁻¹ to 1S·m⁻¹ s⁻¹.
 6. The device of claim 1, wherein said external or internalstimulus comprises a change in biological environment, a change intemperature, a change in pressure, exposure to electromagneticradiation, contact with a chemical agent, application of an electricfield, application of a magnetic field, exposure to a solvent, change inpH of an external environment, change in salt concentration of anexternal environment, or application of an anodic voltage.
 7. The deviceof claim 1, further comprising an encapsulating material at leastpartially encapsulating one or more of said inorganic components,wherein said encapsulating material comprises a selectively removablematerial that is at least partially removed to expose underlyinginorganic components.
 8. The device of claim 7, wherein saidencapsulating material is removed in response to said external orinternal stimulus.
 9. The device of claim 7, wherein said encapsulatingmaterial comprises a material selected from the group consisting of MgO,silk, collagen, gelatin, PLGA, polyvinylalcohol (PVA), PLA, SiO₂,polyanhydrides (polyesters), polyhdroxyalkanates (PHAs) andpolyphosphates.
 10. The device of claim 1, wherein each of said one ormore inorganic components independently comprise Si, Ga, GaAs, ZnO orany combination of these.
 11. The device of claim 1, wherein said one ormore inorganic components independently comprise Mg, W, Fe, or an alloythereof.
 12. The device of claim 1, wherein said one or more inorganiccomponents independently comprise an alloy of Mg with one or moreadditional materials selected from the group consisting of Al, Ag, Ca,Li, Mn, Si, Sn, Y, Zn, and Zr, wherein said one or more additionalmaterials of said alloy has a concentration equal to or less than 10% byweight.
 13. The device of claim 1, wherein said substrate comprisessilk.
 14. The device of claim 1, wherein a time for a thickness ofselectively transformable material to reach zero is given by:${t_{c} = {\frac{4\rho_{m}{M\left( {H_{2}O} \right)}}{{kw}_{0}{M(m)}}\frac{\sqrt{\frac{{kh}_{0}^{2}}{D}}}{\tanh\sqrt{\frac{{kh}_{0}^{2}}{D}}}}};$where t_(c) is the critical time, ρ_(m) is the mass density of thematerial, M(H₂O) is the molar mass of water, M(m) is the molar mass ofthe material, h₀ is the initial thickness of the material, D is thediffusivity of water, k is the reaction constant for the dissolutionreaction, and w₀ the initial concentration of water; wherein k has avalue selected from the range of 10⁵ to 10⁻¹⁰ s⁻¹.
 15. The device ofclaim 1 further comprising a silk overcoat provided on at least aportion of said one or more organic components.
 16. The device of claim1, wherein said one or more inorganic components comprise one or moreinorganic semiconductor components, one or more metallic conductorcomponents or both one or more inorganic semiconductor components andone or more metallic conductor components.
 17. A method of using apassive transient electronic device, said method comprising the stepsof: providing the passive transient electronic device comprising: asubstrate; and one or more inorganic components supported by saidsubstrate; wherein said one or more inorganic components independentlycomprise a selectively transformable material, wherein said one or moreinorganic components have a preselected transience profile in responseto an external or internal stimulus; wherein at least partialtransformation of said one or more inorganic components provides aprogrammable transformation of the passive transient electronic devicein response to said external or internal stimulus and at a pre-selectedtime or at a pre-selected rate, wherein said programmable transformationprovides a change in function of the passive transient electronic devicefrom a first condition to a second condition exposing said passivetransient electronic device to said external or internal stimulus,thereby programmably transforming said passive transient electronicdevice, thereby providing said change in function of said passivetransient electronic device from: (i) a NOR gate to a NAND gate; (ii) aninverter to an isolated transistor; (iii) a resistor to a diode; (iv) aNAND gate to an inverter; (v) a NOR gate to an isolated transistor; or(vi) a NAND gate to an isolated transistor.
 18. The method of claim 17,wherein said passive transient electronic device further comprises asilk overcoat provided on at least a portion of said one or moreinorganic components.
 19. The method of claim 17, wherein said one ormore inorganic components comprise one or more inorganic semiconductorcomponents, one or more metallic conductor components or both one ormore inorganic semiconductor components and one or more metallicconductor components.